FETs, MOSFETs - Arrays - Zui Ai Technology（Taiwan）Company.

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Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Operating Temperature	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Operating Temperature	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
	SSM6N44FE,LM	Toshiba Semiconductor and Storage	80,000	3 days	-	MOSFET 2N-CH 30V 0.1A ES6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 0.1A ES6	Tape & Reel (TR)	150°C (TJ)	2 N-Channel (Dual)	Logic Level Gate	30V	100mA	4 Ohm @ 10mA，4V	1.5V @ 100μA	-	8.5pF @ 3V
	SSM6N44FE,LM	Toshiba Semiconductor and Storage	84,442	3 days	-	MOSFET 2N-CH 30V 0.1A ES6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 0.1A ES6	Cut Tape (CT)	150°C (TJ)	2 N-Channel (Dual)	Logic Level Gate	30V	100mA	4 Ohm @ 10mA，4V	1.5V @ 100μA	-	8.5pF @ 3V
	SSM6N44FE,LM	Toshiba Semiconductor and Storage	84,442	3 days	-	MOSFET 2N-CH 30V 0.1A ES6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 0.1A ES6	-	150°C (TJ)	2 N-Channel (Dual)	Logic Level Gate	30V	100mA	4 Ohm @ 10mA，4V	1.5V @ 100μA	-	8.5pF @ 3V
	SSM6L36FE,LM	Toshiba Semiconductor and Storage	4,000	3 days	-	MOSFET N/P-CH 20V 0.5A/0.33A ES6 MOQ: 1 MPQ: 1	MOSFET N/P-CH 20V 0.5A/0.33A ES6	Tape & Reel (TR)	150°C (TJ)	N and P-Channel	Logic Level Gate	20V	500mA，330mA	630 mOhm @ 200mA，5V	1V @ 1mA	1.23nC @ 4V	46pF @ 10V
	SSM6L36FE,LM	Toshiba Semiconductor and Storage	4,402	3 days	-	MOSFET N/P-CH 20V 0.5A/0.33A ES6 MOQ: 1 MPQ: 1	MOSFET N/P-CH 20V 0.5A/0.33A ES6	Cut Tape (CT)	150°C (TJ)	N and P-Channel	Logic Level Gate	20V	500mA，330mA	630 mOhm @ 200mA，5V	1V @ 1mA	1.23nC @ 4V	46pF @ 10V
	SSM6L36FE,LM	Toshiba Semiconductor and Storage	4,402	3 days	-	MOSFET N/P-CH 20V 0.5A/0.33A ES6 MOQ: 1 MPQ: 1	MOSFET N/P-CH 20V 0.5A/0.33A ES6	-	150°C (TJ)	N and P-Channel	Logic Level Gate	20V	500mA，330mA	630 mOhm @ 200mA，5V	1V @ 1mA	1.23nC @ 4V	46pF @ 10V
	SSM6L35FE,LM	Toshiba Semiconductor and Storage	4,000	3 days	-	MOSFET N/P-CH 20V 0.18A/0.1A ES6 MOQ: 1 MPQ: 1	MOSFET N/P-CH 20V 0.18A/0.1A ES6	Tape & Reel (TR)	150°C (TJ)	N and P-Channel	Logic Level Gate	20V	180mA，100mA	3 Ohm @ 50mA，4V	1V @ 1mA	-	9.5pF @ 3V
	SSM6L35FE,LM	Toshiba Semiconductor and Storage	11,674	3 days	-	MOSFET N/P-CH 20V 0.18A/0.1A ES6 MOQ: 1 MPQ: 1	MOSFET N/P-CH 20V 0.18A/0.1A ES6	Cut Tape (CT)	150°C (TJ)	N and P-Channel	Logic Level Gate	20V	180mA，100mA	3 Ohm @ 50mA，4V	1V @ 1mA	-	9.5pF @ 3V
	SSM6L35FE,LM	Toshiba Semiconductor and Storage	11,674	3 days	-	MOSFET N/P-CH 20V 0.18A/0.1A ES6 MOQ: 1 MPQ: 1	MOSFET N/P-CH 20V 0.18A/0.1A ES6	-	150°C (TJ)	N and P-Channel	Logic Level Gate	20V	180mA，100mA	3 Ohm @ 50mA，4V	1V @ 1mA	-	9.5pF @ 3V
	SSM6P35FE(TE85L,F)	Toshiba Semiconductor and Storage	4,000	3 days	-	MOSFET 2P-CH 20V 0.1A ES6 MOQ: 1 MPQ: 1	MOSFET 2P-CH 20V 0.1A ES6	Tape & Reel (TR)	150°C (TJ)	2 P-Channel (Dual)	Logic Level Gate	20V	100mA	8 Ohm @ 50mA，4V	1V @ 1mA	-	12.2pF @ 3V
	SSM6P35FE(TE85L,F)	Toshiba Semiconductor and Storage	1,991	3 days	-	MOSFET 2P-CH 20V 0.1A ES6 MOQ: 1 MPQ: 1	MOSFET 2P-CH 20V 0.1A ES6	Cut Tape (CT)	150°C (TJ)	2 P-Channel (Dual)	Logic Level Gate	20V	100mA	8 Ohm @ 50mA，4V	1V @ 1mA	-	12.2pF @ 3V
	SSM6P35FE(TE85L,F)	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2P-CH 20V 0.1A ES6 MOQ: 1 MPQ: 1	MOSFET 2P-CH 20V 0.1A ES6	-	150°C (TJ)	2 P-Channel (Dual)	Logic Level Gate	20V	100mA	8 Ohm @ 50mA，4V	1V @ 1mA	-	12.2pF @ 3V
	SSM6N15AFE,LM	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2N-CH 30V 0.1A ES6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 0.1A ES6	Tape & Reel (TR)	150°C (TJ)	2 N-Channel (Dual)	Logic Level Gate	30V	100mA	4 Ohm @ 10mA，4V	1.5V @ 100μA	-	7.8pF @ 3V
	SSM6N15AFE,LM	Toshiba Semiconductor and Storage	3,190	3 days	-	MOSFET 2N-CH 30V 0.1A ES6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 0.1A ES6	Cut Tape (CT)	150°C (TJ)	2 N-Channel (Dual)	Logic Level Gate	30V	100mA	4 Ohm @ 10mA，4V	1.5V @ 100μA	-	7.8pF @ 3V
	SSM6N15AFE,LM	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2N-CH 30V 0.1A ES6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 0.1A ES6	-	150°C (TJ)	2 N-Channel (Dual)	Logic Level Gate	30V	100mA	4 Ohm @ 10mA，4V	1.5V @ 100μA	-	7.8pF @ 3V
	SSM6N35FE,LM	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2N-CH 20V 0.18A ES6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 0.18A ES6	Tape & Reel (TR)	150°C (TJ)	2 N-Channel (Dual)	Logic Level Gate	20V	180mA	3 Ohm @ 50mA，4V	1V @ 1mA	-	9.5pF @ 3V
	SSM6N35FE,LM	Toshiba Semiconductor and Storage	3,846	3 days	-	MOSFET 2N-CH 20V 0.18A ES6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 0.18A ES6	Cut Tape (CT)	150°C (TJ)	2 N-Channel (Dual)	Logic Level Gate	20V	180mA	3 Ohm @ 50mA，4V	1V @ 1mA	-	9.5pF @ 3V
	SSM6N35FE,LM	Toshiba Semiconductor and Storage	3,846	3 days	-	MOSFET 2N-CH 20V 0.18A ES6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 0.18A ES6	-	150°C (TJ)	2 N-Channel (Dual)	Logic Level Gate	20V	180mA	3 Ohm @ 50mA，4V	1V @ 1mA	-	9.5pF @ 3V
	SSM6P41FE(TE85L,F)	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2P-CH 20V 0.72A ES6 MOQ: 1 MPQ: 1	MOSFET 2P-CH 20V 0.72A ES6	Tape & Reel (TR)	150°C (TJ)	2 P-Channel (Dual)	Logic Level Gate	20V	720mA	300 mOhm @ 400mA，4.5V	1V @ 1mA	1.76nC @ 4.5V	110pF @ 10V
	SSM6P41FE(TE85L,F)	Toshiba Semiconductor and Storage	914	3 days	-	MOSFET 2P-CH 20V 0.72A ES6 MOQ: 1 MPQ: 1	MOSFET 2P-CH 20V 0.72A ES6	Cut Tape (CT)	150°C (TJ)	2 P-Channel (Dual)	Logic Level Gate	20V	720mA	300 mOhm @ 400mA，4.5V	1V @ 1mA	1.76nC @ 4.5V	110pF @ 10V

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