FETs, MOSFETs - Arrays - Zui Ai Technology（Taiwan）Company.

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Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Operating Temperature	Power - Max	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Operating Temperature	Power - Max	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
	SSM6N7002BFU(T5L,F	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2N-CH 60V 0.2A US6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 0.2A US6	Cut Tape (CT)	-	150°C (TJ)	300mW	2 N-Channel (Dual)	Logic Level Gate	60V	200mA	2.1 Ohm @ 500mA，10V	3.1V @ 250μA	-	17pF @ 25V
	SSM6N7002BFU(T5L,F	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2N-CH 60V 0.2A US6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 0.2A US6	-	-	150°C (TJ)	300mW	2 N-Channel (Dual)	Logic Level Gate	60V	200mA	2.1 Ohm @ 500mA，10V	3.1V @ 250μA	-	17pF @ 25V
	SSM6N7002BFU,LF	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2N-CH 60V 0.2A US6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 0.2A US6	Tape & Reel (TR)	-	150°C (TJ)	300mW	2 N-Channel (Dual)	Logic Level Gate	60V	200mA	2.1 Ohm @ 500mA，10V	3.1V @ 250μA	-	17pF @ 25V
	SSM6N7002BFU,LF	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2N-CH 60V 0.2A US6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 0.2A US6	Cut Tape (CT)	-	150°C (TJ)	300mW	2 N-Channel (Dual)	Logic Level Gate	60V	200mA	2.1 Ohm @ 500mA，10V	3.1V @ 250μA	-	17pF @ 25V
	SSM6N7002BFU,LF	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2N-CH 60V 0.2A US6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 0.2A US6	-	-	150°C (TJ)	300mW	2 N-Channel (Dual)	Logic Level Gate	60V	200mA	2.1 Ohm @ 500mA，10V	3.1V @ 250μA	-	17pF @ 25V
	SSM6N15AFU,LF	Toshiba Semiconductor and Storage	3,000	3 days	-	MOSFET 2N-CH 30V 0.1A 2-2J1C MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 0.1A 2-2J1C	Tape & Reel (TR)	-	150°C (TJ)	300mW	2 N-Channel (Dual)	Logic Level Gate	30V	100mA	3.6 Ohm @ 10mA，4V	1.5V @ 100μA	-	13.5pF @ 3V
	SSM6N15AFU,LF	Toshiba Semiconductor and Storage	4,156	3 days	-	MOSFET 2N-CH 30V 0.1A 2-2J1C MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 0.1A 2-2J1C	Cut Tape (CT)	-	150°C (TJ)	300mW	2 N-Channel (Dual)	Logic Level Gate	30V	100mA	3.6 Ohm @ 10mA，4V	1.5V @ 100μA	-	13.5pF @ 3V
	SSM6N15AFU,LF	Toshiba Semiconductor and Storage	4,156	3 days	-	MOSFET 2N-CH 30V 0.1A 2-2J1C MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 0.1A 2-2J1C	-	-	150°C (TJ)	300mW	2 N-Channel (Dual)	Logic Level Gate	30V	100mA	3.6 Ohm @ 10mA，4V	1.5V @ 100μA	-	13.5pF @ 3V
	SSM6N7002CFU,LF	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2N-CH 60V 0.17A US6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 0.17A US6	Tape & Reel (TR)	-	150°C (TJ)	285mW	2 N-Channel (Dual)	Standard	60V	170mA	3.9 Ohm @ 100mA，10V	2.1V @ 250μA	0.35nC @ 4.5V	17pF @ 10V
	SSM6N7002CFU,LF	Toshiba Semiconductor and Storage	1,017	3 days	-	MOSFET 2N-CH 60V 0.17A US6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 0.17A US6	Cut Tape (CT)	-	150°C (TJ)	285mW	2 N-Channel (Dual)	Standard	60V	170mA	3.9 Ohm @ 100mA，10V	2.1V @ 250μA	0.35nC @ 4.5V	17pF @ 10V
	SSM6N7002CFU,LF	Toshiba Semiconductor and Storage	1,017	3 days	-	MOSFET 2N-CH 60V 0.17A US6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 0.17A US6	-	-	150°C (TJ)	285mW	2 N-Channel (Dual)	Standard	60V	170mA	3.9 Ohm @ 100mA，10V	2.1V @ 250μA	0.35nC @ 4.5V	17pF @ 10V
	SSM6L35FU(TE85L,F)	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET N/P-CH 20V 0.18A/0.1A US6 MOQ: 1 MPQ: 1	MOSFET N/P-CH 20V 0.18A/0.1A US6	Tape & Reel (TR)	-	-55°C ~ 150°C (TJ)	200mW	N and P-Channel	Logic Level Gate，1.2V Drive	20V	180mA，100mA	3 Ohm @ 50mA，4V	1V @ 1mA	-	9.5pF @ 3V
	SSM6L35FU(TE85L,F)	Toshiba Semiconductor and Storage	542	3 days	-	MOSFET N/P-CH 20V 0.18A/0.1A US6 MOQ: 1 MPQ: 1	MOSFET N/P-CH 20V 0.18A/0.1A US6	Cut Tape (CT)	-	-55°C ~ 150°C (TJ)	200mW	N and P-Channel	Logic Level Gate，1.2V Drive	20V	180mA，100mA	3 Ohm @ 50mA，4V	1V @ 1mA	-	9.5pF @ 3V
	SSM6L35FU(TE85L,F)	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET N/P-CH 20V 0.18A/0.1A US6 MOQ: 1 MPQ: 1	MOSFET N/P-CH 20V 0.18A/0.1A US6	-	-	-55°C ~ 150°C (TJ)	200mW	N and P-Channel	Logic Level Gate，1.2V Drive	20V	180mA，100mA	3 Ohm @ 50mA，4V	1V @ 1mA	-	9.5pF @ 3V
	SSM6N37FU,LF	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2 N-CHANNEL 20V 250MA US6 MOQ: 1 MPQ: 1	MOSFET 2 N-CHANNEL 20V 250MA US6	Tape & Reel (TR)	-	150°C	300mW	2 N-Channel (Dual)	Logic Level Gate，1.5V Drive	20V	250mA (Ta)	2.2 Ohm @ 100mA，4.5V	1V @ 1mA	-	12pF @ 10V
	SSM6N37FU,LF	Toshiba Semiconductor and Storage	156	3 days	-	MOSFET 2 N-CHANNEL 20V 250MA US6 MOQ: 1 MPQ: 1	MOSFET 2 N-CHANNEL 20V 250MA US6	Cut Tape (CT)	-	150°C	300mW	2 N-Channel (Dual)	Logic Level Gate，1.5V Drive	20V	250mA (Ta)	2.2 Ohm @ 100mA，4.5V	1V @ 1mA	-	12pF @ 10V
	SSM6N37FU,LF	Toshiba Semiconductor and Storage	156	3 days	-	MOSFET 2 N-CHANNEL 20V 250MA US6 MOQ: 1 MPQ: 1	MOSFET 2 N-CHANNEL 20V 250MA US6	-	-	150°C	300mW	2 N-Channel (Dual)	Logic Level Gate，1.5V Drive	20V	250mA (Ta)	2.2 Ohm @ 100mA，4.5V	1V @ 1mA	-	12pF @ 10V
	SSM6L09FUTE85LF	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET N/P-CH 30V 0.4A/0.2A US6 MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V 0.4A/0.2A US6	Tape & Reel (TR)	-	150°C (TJ)	300mW	N and P-Channel	Logic Level Gate	30V	400mA，200mA	700 mOhm @ 200MA，10V	1.8V @ 100μA	-	20pF @ 5V
	SSM6L09FUTE85LF	Toshiba Semiconductor and Storage	344	3 days	-	MOSFET N/P-CH 30V 0.4A/0.2A US6 MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V 0.4A/0.2A US6	Cut Tape (CT)	-	150°C (TJ)	300mW	N and P-Channel	Logic Level Gate	30V	400mA，200mA	700 mOhm @ 200MA，10V	1.8V @ 100μA	-	20pF @ 5V
	SSM6L09FUTE85LF	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET N/P-CH 30V 0.4A/0.2A US6 MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V 0.4A/0.2A US6	-	-	150°C (TJ)	300mW	N and P-Channel	Logic Level Gate	30V	400mA，200mA	700 mOhm @ 200MA，10V	1.8V @ 100μA	-	20pF @ 5V