- Packaging：
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- Operating Temperature：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id，Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Selected conditions:
Discover 9 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Operating Temperature | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Operating Temperature | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Toshiba Semiconductor and Storage |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V 800MA UF6
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Tape & Reel (TR) | 150°C (TJ) | N and P-Channel | Logic Level Gate，1.8V Drive | 20V | 800mA (Ta) | 143 mOhm @ 600mA，4V，234 mOhm @ 600mA，4V | 1V @ 1mA | - | 268pF @ 10V，250pF @ 10V | ||
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Toshiba Semiconductor and Storage |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V 0.8A UF6
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Tape & Reel (TR) | 150°C (TJ) | N and P-Channel | Logic Level Gate，1.8V Drive | 20V | 800mA | 143 mOhm @ 600MA，4V | 1V @ 1mA | - | 268pF @ 10V | |||
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Toshiba Semiconductor and Storage |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V 0.8A UF6
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Cut Tape (CT) | 150°C (TJ) | N and P-Channel | Logic Level Gate，1.8V Drive | 20V | 800mA | 143 mOhm @ 600MA，4V | 1V @ 1mA | - | 268pF @ 10V | |||
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Toshiba Semiconductor and Storage |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V 0.8A UF6
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- | 150°C (TJ) | N and P-Channel | Logic Level Gate，1.8V Drive | 20V | 800mA | 143 mOhm @ 600MA，4V | 1V @ 1mA | - | 268pF @ 10V | |||
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Toshiba Semiconductor and Storage |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V 0.5A UF6 S
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Tape & Reel (TR) | 150°C (TJ) | N and P-Channel | Logic Level Gate | 20V | 500mA | 145 mOhm @ 250MA，4V | 1.1V @ 100μA | - | 268pF @ 10V | |||
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Toshiba Semiconductor and Storage |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V 0.5A UF6 S
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Cut Tape (CT) | 150°C (TJ) | N and P-Channel | Logic Level Gate | 20V | 500mA | 145 mOhm @ 250MA，4V | 1.1V @ 100μA | - | 268pF @ 10V | |||
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Toshiba Semiconductor and Storage |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V 0.5A UF6 S
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- | 150°C (TJ) | N and P-Channel | Logic Level Gate | 20V | 500mA | 145 mOhm @ 250MA，4V | 1.1V @ 100μA | - | 268pF @ 10V | |||
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Toshiba Semiconductor and Storage |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 2 N-CHANNEL 20V 1.6A UF6
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- | 150°C | 2 N-Channel (Dual) | Standard | 20V | 1.6A (Ta) | 119 mOhm @ 1A，4V | 1V @ 1mA | 7.5nC @ 4V | 260pF @ 10V | |||
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Toshiba Semiconductor and Storage |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 30V 500MA UF6
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- | 150°C | N and P-Channel | Standard | 30V | 500mA (Ta) | 145 mOhm @ 500mA，4.5V，260 mOhm @ 250mA，4V | 1.1V @ 100μA | - | 245pF @ 10V，218pF @ 10V |
