- FET Type：
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- FET Feature：
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- Drain to Source Voltage (Vdss)：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id，Vgs：
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- Vgs(th) (Max) @ Id：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Selected conditions:
Discover 2 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | |
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Toshiba Semiconductor and Storage |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 40V 4.7A PS-8
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360mW | 2 N-Channel (Dual) | Standard | 40V | 4.7A | - | 2.5V @ 1mA | - | ||
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Toshiba Semiconductor and Storage |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V/12V PS-8
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1W | N and P-Channel | Logic Level Gate | 20V，12V | 100mA，5.5A | 3 Ohm @ 10mA，4V | 1.1V @ 100μA | 9.3pF @ 3V |
