- Packaging：
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- Operating Temperature：
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- Power - Max：
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- FET Feature：
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- Drain to Source Voltage (Vdss)：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id，Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Selected conditions:
Discover 35 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Nexperia USA Inc. |
140,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 0.2A SOT666
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 375mW | 2 N-Channel (Dual) | Logic Level Gate | 30V | 200mA | 4.5 Ohm @ 100mA，10V | 1.5V @ 250μA | 0.44nC @ 4.5V | 13pF @ 10V | ||
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Nexperia USA Inc. |
143,629
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 0.2A SOT666
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 375mW | 2 N-Channel (Dual) | Logic Level Gate | 30V | 200mA | 4.5 Ohm @ 100mA，10V | 1.5V @ 250μA | 0.44nC @ 4.5V | 13pF @ 10V | ||
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Nexperia USA Inc. |
143,629
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 0.2A SOT666
|
- | - | -55°C ~ 150°C (TJ) | 375mW | 2 N-Channel (Dual) | Logic Level Gate | 30V | 200mA | 4.5 Ohm @ 100mA，10V | 1.5V @ 250μA | 0.44nC @ 4.5V | 13pF @ 10V | ||
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Nexperia USA Inc. |
20,000
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 0.4A SOT666
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Tape & Reel (TR) | Automotive，AEC-Q101，TrenchMOS | -55°C ~ 150°C (TJ) | 500mW | 2 N-Channel (Dual) | Logic Level Gate | 30V | 400mA | 1.4 Ohm @ 350mA，4.5V | 1.1V @ 250μA | 0.68nC @ 4.5V | 50pF @ 15V | ||
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Nexperia USA Inc. |
20,578
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 0.4A SOT666
|
Cut Tape (CT) | Automotive，AEC-Q101，TrenchMOS | -55°C ~ 150°C (TJ) | 500mW | 2 N-Channel (Dual) | Logic Level Gate | 30V | 400mA | 1.4 Ohm @ 350mA，4.5V | 1.1V @ 250μA | 0.68nC @ 4.5V | 50pF @ 15V | ||
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Nexperia USA Inc. |
20,578
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 0.4A SOT666
|
- | Automotive，AEC-Q101，TrenchMOS | -55°C ~ 150°C (TJ) | 500mW | 2 N-Channel (Dual) | Logic Level Gate | 30V | 400mA | 1.4 Ohm @ 350mA，4.5V | 1.1V @ 250μA | 0.68nC @ 4.5V | 50pF @ 15V | ||
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Nexperia USA Inc. |
12,000
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 30V 0.22A SOT666
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Tape & Reel (TR) | Automotive，AEC-Q101，TrenchMOS | -55°C ~ 150°C (TJ) | 500mW | 2 P-Channel (Dual) | Logic Level Gate | 30V | 220mA | 4.1 Ohm @ 200mA，4.5V | 1.1V @ 250μA | 0.72nC @ 4.5V | 46pF @ 15V | ||
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Nexperia USA Inc. |
15,780
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 30V 0.22A SOT666
|
Cut Tape (CT) | Automotive，AEC-Q101，TrenchMOS | -55°C ~ 150°C (TJ) | 500mW | 2 P-Channel (Dual) | Logic Level Gate | 30V | 220mA | 4.1 Ohm @ 200mA，4.5V | 1.1V @ 250μA | 0.72nC @ 4.5V | 46pF @ 15V | ||
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Nexperia USA Inc. |
15,780
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 30V 0.22A SOT666
|
- | Automotive，AEC-Q101，TrenchMOS | -55°C ~ 150°C (TJ) | 500mW | 2 P-Channel (Dual) | Logic Level Gate | 30V | 220mA | 4.1 Ohm @ 200mA，4.5V | 1.1V @ 250μA | 0.72nC @ 4.5V | 46pF @ 15V | ||
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Nexperia USA Inc. |
4,000
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 50V 0.17A SOT666
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Tape & Reel (TR) | Automotive，AEC-Q101，TrenchMOS | -55°C ~ 150°C (TJ) | 500mW | 2 P-Channel (Dual) | Logic Level Gate | 50V | 170mA | 7.5 Ohm @ 100mA，10V | 2.1V @ 250μA | 0.35nC @ 5V | 36pF @ 25V | ||
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Nexperia USA Inc. |
5,923
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 50V 0.17A SOT666
|
Cut Tape (CT) | Automotive，AEC-Q101，TrenchMOS | -55°C ~ 150°C (TJ) | 500mW | 2 P-Channel (Dual) | Logic Level Gate | 50V | 170mA | 7.5 Ohm @ 100mA，10V | 2.1V @ 250μA | 0.35nC @ 5V | 36pF @ 25V | ||
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Nexperia USA Inc. |
5,923
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 50V 0.17A SOT666
|
- | Automotive，AEC-Q101，TrenchMOS | -55°C ~ 150°C (TJ) | 500mW | 2 P-Channel (Dual) | Logic Level Gate | 50V | 170mA | 7.5 Ohm @ 100mA，10V | 2.1V @ 250μA | 0.35nC @ 5V | 36pF @ 25V | ||
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Nexperia USA Inc. |
20,000
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V SOT666
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Tape & Reel (TR) | Automotive，AEC-Q101，TrenchMOS | -55°C ~ 150°C (TJ) | 500mW | N and P-Channel | Logic Level Gate | 30V | 400mA，220mA | 1.4 Ohm @ 350mA，4.5V | 1.1V @ 250μA | 0.68nC @ 4.5V | 50pF @ 15V | ||
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Nexperia USA Inc. |
23,911
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V SOT666
|
Cut Tape (CT) | Automotive，AEC-Q101，TrenchMOS | -55°C ~ 150°C (TJ) | 500mW | N and P-Channel | Logic Level Gate | 30V | 400mA，220mA | 1.4 Ohm @ 350mA，4.5V | 1.1V @ 250μA | 0.68nC @ 4.5V | 50pF @ 15V | ||
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Nexperia USA Inc. |
23,911
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V SOT666
|
- | Automotive，AEC-Q101，TrenchMOS | -55°C ~ 150°C (TJ) | 500mW | N and P-Channel | Logic Level Gate | 30V | 400mA，220mA | 1.4 Ohm @ 350mA，4.5V | 1.1V @ 250μA | 0.68nC @ 4.5V | 50pF @ 15V | ||
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Nexperia USA Inc. |
4,000
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 60V 0.35A SOT-666
|
Tape & Reel (TR) | - | 150°C (TJ) | 330mW | 2 N-Channel (Dual) | Logic Level Gate | 60V | 350mA | 1.6 Ohm @ 500mA，10V | 2.4V @ 250μA | 0.8nC @ 4.5V | 50pF @ 10V | ||
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Nexperia USA Inc. |
7,293
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 60V 0.35A SOT-666
|
Cut Tape (CT) | - | 150°C (TJ) | 330mW | 2 N-Channel (Dual) | Logic Level Gate | 60V | 350mA | 1.6 Ohm @ 500mA，10V | 2.4V @ 250μA | 0.8nC @ 4.5V | 50pF @ 10V | ||
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|
Nexperia USA Inc. |
7,293
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 60V 0.35A SOT-666
|
- | - | 150°C (TJ) | 330mW | 2 N-Channel (Dual) | Logic Level Gate | 60V | 350mA | 1.6 Ohm @ 500mA，10V | 2.4V @ 250μA | 0.8nC @ 4.5V | 50pF @ 10V | ||
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Nexperia USA Inc. |
20,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 0.55A SOT666
|
Tape & Reel (TR) | Automotive，AEC-Q101，TrenchMOS | -55°C ~ 150°C (TJ) | 330mW | 2 P-Channel (Dual) | Logic Level Gate | 20V | 550mA | 850 mOhm @ 400mA，4.5V | 1.3V @ 250μA | 1.14nC @ 4.5V | 87pF @ 10V | ||
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Nexperia USA Inc. |
22,990
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 0.55A SOT666
|
Cut Tape (CT) | Automotive，AEC-Q101，TrenchMOS | -55°C ~ 150°C (TJ) | 330mW | 2 P-Channel (Dual) | Logic Level Gate | 20V | 550mA | 850 mOhm @ 400mA，4.5V | 1.3V @ 250μA | 1.14nC @ 4.5V | 87pF @ 10V |
