- Packaging：
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- Series：
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- Operating Temperature：
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- Power - Max：
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- FET Feature：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id，Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Selected conditions:
Discover 28 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Infineon Technologies |
21,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V SOT363
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Tape & Reel (TR) | OptiMOS | -55°C ~ 150°C (TJ) | 500mW | N and P-Channel | Logic Level Gate | 20V | 950mA，530mA | 350 mOhm @ 950mA，4.5V | 1.2V @ 1.6μA | 0.34nC @ 4.5V | 47pF @ 10V | ||
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Infineon Technologies |
22,363
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V SOT363
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Cut Tape (CT) | OptiMOS | -55°C ~ 150°C (TJ) | 500mW | N and P-Channel | Logic Level Gate | 20V | 950mA，530mA | 350 mOhm @ 950mA，4.5V | 1.2V @ 1.6μA | 0.34nC @ 4.5V | 47pF @ 10V | ||
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Infineon Technologies |
22,363
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V SOT363
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- | OptiMOS | -55°C ~ 150°C (TJ) | 500mW | N and P-Channel | Logic Level Gate | 20V | 950mA，530mA | 350 mOhm @ 950mA，4.5V | 1.2V @ 1.6μA | 0.34nC @ 4.5V | 47pF @ 10V | ||
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Infineon Technologies |
93,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 0.39A SOT363
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Tape & Reel (TR) | OptiMOS | -55°C ~ 150°C (TJ) | 250mW | 2 P-Channel (Dual) | Logic Level Gate | 20V | 390mA | 1.2 Ohm @ 390mA，4.5V | 1.2V @ 1.5μA | 0.62nC @ 4.5V | 56pF @ 15V | ||
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Infineon Technologies |
93,437
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 0.39A SOT363
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Cut Tape (CT) | OptiMOS | -55°C ~ 150°C (TJ) | 250mW | 2 P-Channel (Dual) | Logic Level Gate | 20V | 390mA | 1.2 Ohm @ 390mA，4.5V | 1.2V @ 1.5μA | 0.62nC @ 4.5V | 56pF @ 15V | ||
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Infineon Technologies |
93,437
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 0.39A SOT363
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- | OptiMOS | -55°C ~ 150°C (TJ) | 250mW | 2 P-Channel (Dual) | Logic Level Gate | 20V | 390mA | 1.2 Ohm @ 390mA，4.5V | 1.2V @ 1.5μA | 0.62nC @ 4.5V | 56pF @ 15V | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 0.95A SOT363
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Tape & Reel (TR) | OptiMOS | -55°C ~ 150°C (TJ) | 500mW | 2 N-Channel (Dual) | Logic Level Gate | 20V | 950mA | 350 mOhm @ 950mA，4.5V | 1.2V @ 1.6μA | 0.32nC @ 4.5V | 63pF @ 10V | ||
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Infineon Technologies |
2,435
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 0.95A SOT363
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Cut Tape (CT) | OptiMOS | -55°C ~ 150°C (TJ) | 500mW | 2 N-Channel (Dual) | Logic Level Gate | 20V | 950mA | 350 mOhm @ 950mA，4.5V | 1.2V @ 1.6μA | 0.32nC @ 4.5V | 63pF @ 10V | ||
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Infineon Technologies |
2,435
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 0.95A SOT363
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- | OptiMOS | -55°C ~ 150°C (TJ) | 500mW | 2 N-Channel (Dual) | Logic Level Gate | 20V | 950mA | 350 mOhm @ 950mA，4.5V | 1.2V @ 1.6μA | 0.32nC @ 4.5V | 63pF @ 10V | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 0.3A SOT363
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Tape & Reel (TR) | OptiMOS | -55°C ~ 150°C (TJ) | 500mW | 2 N-Channel (Dual) | Logic Level Gate | 60V | 300mA | 3 Ohm @ 500mA，10V | 2.5V @ 250μA | 0.6nC @ 10V | 20pF @ 25V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 0.3A SOT363
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Cut Tape (CT) | OptiMOS | -55°C ~ 150°C (TJ) | 500mW | 2 N-Channel (Dual) | Logic Level Gate | 60V | 300mA | 3 Ohm @ 500mA，10V | 2.5V @ 250μA | 0.6nC @ 10V | 20pF @ 25V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 0.3A SOT363
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- | OptiMOS | -55°C ~ 150°C (TJ) | 500mW | 2 N-Channel (Dual) | Logic Level Gate | 60V | 300mA | 3 Ohm @ 500mA，10V | 2.5V @ 250μA | 0.6nC @ 10V | 20pF @ 25V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 0.88A SOT363
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Tape & Reel (TR) | OptiMOS | -55°C ~ 150°C (TJ) | 500mW | 2 N-Channel (Dual) | Logic Level Gate | 20V | 880mA | 400 mOhm @ 880mA，2.5V | 750mV @ 1.6μA | 0.26nC @ 2.5V | 78pF @ 10V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 0.88A SOT363
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Cut Tape (CT) | OptiMOS | -55°C ~ 150°C (TJ) | 500mW | 2 N-Channel (Dual) | Logic Level Gate | 20V | 880mA | 400 mOhm @ 880mA，2.5V | 750mV @ 1.6μA | 0.26nC @ 2.5V | 78pF @ 10V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 0.88A SOT363
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- | OptiMOS | -55°C ~ 150°C (TJ) | 500mW | 2 N-Channel (Dual) | Logic Level Gate | 20V | 880mA | 400 mOhm @ 880mA，2.5V | 750mV @ 1.6μA | 0.26nC @ 2.5V | 78pF @ 10V | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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SMALL SIGNAL+P-CH
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Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 0.39A SOT363
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Tape & Reel (TR) | OptiMOS | -55°C ~ 150°C (TJ) | 250mW | 2 P-Channel (Dual) | Logic Level Gate | 20V | 390mA | 1.2 Ohm @ 390mA，4.5V | 1.2V @ 1.5μA | 0.62nC @ 4.5V | 56pF @ 15V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 0.39A SOT363
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Cut Tape (CT) | OptiMOS | -55°C ~ 150°C (TJ) | 250mW | 2 P-Channel (Dual) | Logic Level Gate | 20V | 390mA | 1.2 Ohm @ 390mA，4.5V | 1.2V @ 1.5μA | 0.62nC @ 4.5V | 56pF @ 15V | ||
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Infineon Technologies |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 0.39A SOT363
|
- | OptiMOS | -55°C ~ 150°C (TJ) | 250mW | 2 P-Channel (Dual) | Logic Level Gate | 20V | 390mA | 1.2 Ohm @ 390mA，4.5V | 1.2V @ 1.5μA | 0.62nC @ 4.5V | 56pF @ 15V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 0.3A SOT363
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Tape & Reel (TR) | OptiMOS | -55°C ~ 150°C (TJ) | 500mW | 2 N-Channel (Dual) | Logic Level Gate | 60V | 300mA | 3 Ohm @ 500mA，10V | 2.5V @ 250μA | 0.6nC @ 10V | 20pF @ 25V |
