Series:
Drain to Source Voltage (Vdss):
Discover 103 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
SI7905DN-T1-GE3
Vishay Siliconix
18,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 40V 6A PPAK 1212-8
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) 20.8W 2 P-Channel (Dual) Standard 40V 6A 60 mOhm @ 5A,10V 3V @ 250μA 30nC @ 10V 880pF @ 20V
SI7905DN-T1-GE3
Vishay Siliconix
18,561
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 40V 6A PPAK 1212-8
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) 20.8W 2 P-Channel (Dual) Standard 40V 6A 60 mOhm @ 5A,10V 3V @ 250μA 30nC @ 10V 880pF @ 20V
SI7905DN-T1-GE3
Vishay Siliconix
18,561
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 40V 6A PPAK 1212-8
- TrenchFET -55°C ~ 150°C (TJ) 20.8W 2 P-Channel (Dual) Standard 40V 6A 60 mOhm @ 5A,10V 3V @ 250μA 30nC @ 10V 880pF @ 20V
SI7218DN-T1-E3
Vishay Siliconix
6,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 24A 1212-8
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) 23W 2 N-Channel (Dual) Standard 30V 24A 25 mOhm @ 8A,10V 3V @ 250μA 17nC @ 10V 700pF @ 15V
SI7218DN-T1-E3
Vishay Siliconix
7,755
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 24A 1212-8
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) 23W 2 N-Channel (Dual) Standard 30V 24A 25 mOhm @ 8A,10V 3V @ 250μA 17nC @ 10V 700pF @ 15V
SI7218DN-T1-E3
Vishay Siliconix
7,755
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 24A 1212-8
- TrenchFET -55°C ~ 150°C (TJ) 23W 2 N-Channel (Dual) Standard 30V 24A 25 mOhm @ 8A,10V 3V @ 250μA 17nC @ 10V 700pF @ 15V
SI7228DN-T1-GE3
Vishay Siliconix
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 26A PPAK 1212-8
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) 23W 2 N-Channel (Dual) Standard 30V 26A 20 mOhm @ 8.8A,10V 2.5V @ 250μA 13nC @ 10V 480pF @ 15V
SI7228DN-T1-GE3
Vishay Siliconix
4,358
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 26A PPAK 1212-8
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) 23W 2 N-Channel (Dual) Standard 30V 26A 20 mOhm @ 8.8A,10V 2.5V @ 250μA 13nC @ 10V 480pF @ 15V
SI7228DN-T1-GE3
Vishay Siliconix
4,358
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 26A PPAK 1212-8
- TrenchFET -55°C ~ 150°C (TJ) 23W 2 N-Channel (Dual) Standard 30V 26A 20 mOhm @ 8.8A,10V 2.5V @ 250μA 13nC @ 10V 480pF @ 15V
SI7913DN-T1-GE3
Vishay Siliconix
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 5A PPAK 1212-8
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) 1.3W 2 P-Channel (Dual) Logic Level Gate 20V 5A 37 mOhm @ 7.4A,4.5V 1V @ 250μA 24nC @ 4.5V -
SI7913DN-T1-GE3
Vishay Siliconix
6,431
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 5A PPAK 1212-8
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) 1.3W 2 P-Channel (Dual) Logic Level Gate 20V 5A 37 mOhm @ 7.4A,4.5V 1V @ 250μA 24nC @ 4.5V -
SI7913DN-T1-GE3
Vishay Siliconix
6,431
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 5A PPAK 1212-8
- TrenchFET -55°C ~ 150°C (TJ) 1.3W 2 P-Channel (Dual) Logic Level Gate 20V 5A 37 mOhm @ 7.4A,4.5V 1V @ 250μA 24nC @ 4.5V -
SI7900AEDN-T1-E3
Vishay Siliconix
48,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 6A 1212-8
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) 1.5W 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 6A 26 mOhm @ 8.5A,4.5V 900mV @ 250μA 16nC @ 4.5V -
SI7900AEDN-T1-E3
Vishay Siliconix
53,549
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 6A 1212-8
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) 1.5W 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 6A 26 mOhm @ 8.5A,4.5V 900mV @ 250μA 16nC @ 4.5V -
SI7900AEDN-T1-E3
Vishay Siliconix
53,549
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 6A 1212-8
- TrenchFET -55°C ~ 150°C (TJ) 1.5W 2 N-Channel (Dual) Common Drain Logic Level Gate 20V 6A 26 mOhm @ 8.5A,4.5V 900mV @ 250μA 16nC @ 4.5V -
SISB46DN-T1-GE3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 40V POWERPAK 1212-8
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) 23W 2 N-Channel (Dual) Standard 40V 34A (Tc) 11.71 mOhm @ 5A,10V 2.2V @ 250μA 11nC @ 4.5V 1100pF @ 20V
SISB46DN-T1-GE3
Vishay Siliconix
2,336
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 40V POWERPAK 1212-8
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) 23W 2 N-Channel (Dual) Standard 40V 34A (Tc) 11.71 mOhm @ 5A,10V 2.2V @ 250μA 11nC @ 4.5V 1100pF @ 20V
SISB46DN-T1-GE3
Vishay Siliconix
2,336
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 40V POWERPAK 1212-8
- TrenchFET -55°C ~ 150°C (TJ) 23W 2 N-Channel (Dual) Standard 40V 34A (Tc) 11.71 mOhm @ 5A,10V 2.2V @ 250μA 11nC @ 4.5V 1100pF @ 20V
SI7212DN-T1-GE3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 4.9A 1212-8
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 1.3W 2 N-Channel (Dual) Logic Level Gate 30V 4.9A 36 mOhm @ 6.8A,10V 1.6V @ 250μA 11nC @ 4.5V -
SI7212DN-T1-GE3
Vishay Siliconix
1,507
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 4.9A 1212-8
Cut Tape (CT) - -55°C ~ 150°C (TJ) 1.3W 2 N-Channel (Dual) Logic Level Gate 30V 4.9A 36 mOhm @ 6.8A,10V 1.6V @ 250μA 11nC @ 4.5V -