- Packaging:
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- Series:
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- Operating Temperature:
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- Power - Max:
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- FET Type:
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- FET Feature:
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- Current - Continuous Drain (Id) @ 25°C:
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- Rds On (Max) @ Id,Vgs:
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- Vgs(th) (Max) @ Id:
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- Gate Charge (Qg) (Max) @ Vgs:
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- Input Capacitance (Ciss) (Max) @ Vds:
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- Selected conditions:
Discover 103 products
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id,Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | ||
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id,Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | ||
Vishay Siliconix |
18,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 40V 6A PPAK 1212-8
|
Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | 20.8W | 2 P-Channel (Dual) | Standard | 40V | 6A | 60 mOhm @ 5A,10V | 3V @ 250μA | 30nC @ 10V | 880pF @ 20V | ||||
Vishay Siliconix |
18,561
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 40V 6A PPAK 1212-8
|
Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | 20.8W | 2 P-Channel (Dual) | Standard | 40V | 6A | 60 mOhm @ 5A,10V | 3V @ 250μA | 30nC @ 10V | 880pF @ 20V | ||||
Vishay Siliconix |
18,561
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 40V 6A PPAK 1212-8
|
- | TrenchFET | -55°C ~ 150°C (TJ) | 20.8W | 2 P-Channel (Dual) | Standard | 40V | 6A | 60 mOhm @ 5A,10V | 3V @ 250μA | 30nC @ 10V | 880pF @ 20V | ||||
Vishay Siliconix |
6,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 24A 1212-8
|
Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | 23W | 2 N-Channel (Dual) | Standard | 30V | 24A | 25 mOhm @ 8A,10V | 3V @ 250μA | 17nC @ 10V | 700pF @ 15V | ||||
Vishay Siliconix |
7,755
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 24A 1212-8
|
Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | 23W | 2 N-Channel (Dual) | Standard | 30V | 24A | 25 mOhm @ 8A,10V | 3V @ 250μA | 17nC @ 10V | 700pF @ 15V | ||||
Vishay Siliconix |
7,755
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 24A 1212-8
|
- | TrenchFET | -55°C ~ 150°C (TJ) | 23W | 2 N-Channel (Dual) | Standard | 30V | 24A | 25 mOhm @ 8A,10V | 3V @ 250μA | 17nC @ 10V | 700pF @ 15V | ||||
Vishay Siliconix |
3,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 26A PPAK 1212-8
|
Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | 23W | 2 N-Channel (Dual) | Standard | 30V | 26A | 20 mOhm @ 8.8A,10V | 2.5V @ 250μA | 13nC @ 10V | 480pF @ 15V | ||||
Vishay Siliconix |
4,358
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 26A PPAK 1212-8
|
Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | 23W | 2 N-Channel (Dual) | Standard | 30V | 26A | 20 mOhm @ 8.8A,10V | 2.5V @ 250μA | 13nC @ 10V | 480pF @ 15V | ||||
Vishay Siliconix |
4,358
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 26A PPAK 1212-8
|
- | TrenchFET | -55°C ~ 150°C (TJ) | 23W | 2 N-Channel (Dual) | Standard | 30V | 26A | 20 mOhm @ 8.8A,10V | 2.5V @ 250μA | 13nC @ 10V | 480pF @ 15V | ||||
Vishay Siliconix |
3,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 5A PPAK 1212-8
|
Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | 1.3W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 5A | 37 mOhm @ 7.4A,4.5V | 1V @ 250μA | 24nC @ 4.5V | - | ||||
Vishay Siliconix |
6,431
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 5A PPAK 1212-8
|
Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | 1.3W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 5A | 37 mOhm @ 7.4A,4.5V | 1V @ 250μA | 24nC @ 4.5V | - | ||||
Vishay Siliconix |
6,431
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 5A PPAK 1212-8
|
- | TrenchFET | -55°C ~ 150°C (TJ) | 1.3W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 5A | 37 mOhm @ 7.4A,4.5V | 1V @ 250μA | 24nC @ 4.5V | - | ||||
Vishay Siliconix |
48,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 6A 1212-8
|
Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | 1.5W | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 6A | 26 mOhm @ 8.5A,4.5V | 900mV @ 250μA | 16nC @ 4.5V | - | ||||
Vishay Siliconix |
53,549
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 6A 1212-8
|
Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | 1.5W | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 6A | 26 mOhm @ 8.5A,4.5V | 900mV @ 250μA | 16nC @ 4.5V | - | ||||
Vishay Siliconix |
53,549
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 6A 1212-8
|
- | TrenchFET | -55°C ~ 150°C (TJ) | 1.5W | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 6A | 26 mOhm @ 8.5A,4.5V | 900mV @ 250μA | 16nC @ 4.5V | - | ||||
Vishay Siliconix |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 40V POWERPAK 1212-8
|
Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | 23W | 2 N-Channel (Dual) | Standard | 40V | 34A (Tc) | 11.71 mOhm @ 5A,10V | 2.2V @ 250μA | 11nC @ 4.5V | 1100pF @ 20V | ||||
Vishay Siliconix |
2,336
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 40V POWERPAK 1212-8
|
Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | 23W | 2 N-Channel (Dual) | Standard | 40V | 34A (Tc) | 11.71 mOhm @ 5A,10V | 2.2V @ 250μA | 11nC @ 4.5V | 1100pF @ 20V | ||||
Vishay Siliconix |
2,336
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 40V POWERPAK 1212-8
|
- | TrenchFET | -55°C ~ 150°C (TJ) | 23W | 2 N-Channel (Dual) | Standard | 40V | 34A (Tc) | 11.71 mOhm @ 5A,10V | 2.2V @ 250μA | 11nC @ 4.5V | 1100pF @ 20V | ||||
Vishay Siliconix |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 4.9A 1212-8
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 1.3W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4.9A | 36 mOhm @ 6.8A,10V | 1.6V @ 250μA | 11nC @ 4.5V | - | ||||
Vishay Siliconix |
1,507
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 4.9A 1212-8
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 1.3W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4.9A | 36 mOhm @ 6.8A,10V | 1.6V @ 250μA | 11nC @ 4.5V | - |