Discover 12 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Power - Max FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
FDMD86100
ON Semiconductor
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 100V
Tape & Reel (TR) 2.2W 2 N-Channel (Dual) Common Source 100V 10A 10.5 mOhm @ 10A,10V 4V @ 250μA 30nC @ 10V 2060pF @ 50V
FDMD86100
ON Semiconductor
1,532
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 100V
Cut Tape (CT) 2.2W 2 N-Channel (Dual) Common Source 100V 10A 10.5 mOhm @ 10A,10V 4V @ 250μA 30nC @ 10V 2060pF @ 50V
FDMD86100
ON Semiconductor
1,532
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 100V
- 2.2W 2 N-Channel (Dual) Common Source 100V 10A 10.5 mOhm @ 10A,10V 4V @ 250μA 30nC @ 10V 2060pF @ 50V
FDMD85100
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 100V
Tape & Reel (TR) 2.2W 2 N-Channel (Half Bridge) 100V 10.4A 9.9 mOhm @ 10.4A,10V 4V @ 250μA 31nC @ 10V 2230pF @ 50V
FDMD85100
ON Semiconductor
2,845
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 100V
Cut Tape (CT) 2.2W 2 N-Channel (Half Bridge) 100V 10.4A 9.9 mOhm @ 10.4A,10V 4V @ 250μA 31nC @ 10V 2230pF @ 50V
FDMD85100
ON Semiconductor
2,845
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 100V
- 2.2W 2 N-Channel (Half Bridge) 100V 10.4A 9.9 mOhm @ 10.4A,10V 4V @ 250μA 31nC @ 10V 2230pF @ 50V
FDMD8560L
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 46V 22A POWER
Tape & Reel (TR) 2.2W 2 N-Channel (Half Bridge) 60V 22A,93A 3.2 mOhm @ 22A,10V 3V @ 250μA 128nC @ 10V 11130pF @ 30V
FDMD8560L
ON Semiconductor
1,840
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 46V 22A POWER
Cut Tape (CT) 2.2W 2 N-Channel (Half Bridge) 60V 22A,93A 3.2 mOhm @ 22A,10V 3V @ 250μA 128nC @ 10V 11130pF @ 30V
FDMD8560L
ON Semiconductor
1,840
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 46V 22A POWER
- 2.2W 2 N-Channel (Half Bridge) 60V 22A,93A 3.2 mOhm @ 22A,10V 3V @ 250μA 128nC @ 10V 11130pF @ 30V
FDMD8540L
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 40V 33A POWER
Tape & Reel (TR) 2.3W 2 N-Channel (Half Bridge) 40V 33A,156A 1.5 mOhm @ 33A,10V 3V @ 250μA 113nC @ 10V 7940pF @ 20V
FDMD8540L
ON Semiconductor
1,981
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 40V 33A POWER
Cut Tape (CT) 2.3W 2 N-Channel (Half Bridge) 40V 33A,156A 1.5 mOhm @ 33A,10V 3V @ 250μA 113nC @ 10V 7940pF @ 20V
FDMD8540L
ON Semiconductor
1,981
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 40V 33A POWER
- 2.3W 2 N-Channel (Half Bridge) 40V 33A,156A 1.5 mOhm @ 33A,10V 3V @ 250μA 113nC @ 10V 7940pF @ 20V