Power - Max:
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 6 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Power - Max FET Type Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
FDMJ1023PZ
ON Semiconductor
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 2.9A SC75
Tape & Reel (TR) 700mW 2 P-Channel (Dual) 2.9A 112 mOhm @ 2.9A,4.5V 1V @ 250μA 6.5nC @ 4.5V 400pF @ 10V
FDMJ1023PZ
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 2.9A SC75
Cut Tape (CT) 700mW 2 P-Channel (Dual) 2.9A 112 mOhm @ 2.9A,4.5V 1V @ 250μA 6.5nC @ 4.5V 400pF @ 10V
FDMJ1023PZ
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 2.9A SC75
- 700mW 2 P-Channel (Dual) 2.9A 112 mOhm @ 2.9A,4.5V 1V @ 250μA 6.5nC @ 4.5V 400pF @ 10V
FDMJ1032C
ON Semiconductor
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 3.2A/2.5A SC75
Tape & Reel (TR) 800mW N and P-Channel 3.2A,2.5A 90 mOhm @ 3.2A,4.5V 1.5V @ 250μA 3nC @ 4.5V 270pF @ 10V
FDMJ1032C
ON Semiconductor
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 3.2A/2.5A SC75
Cut Tape (CT) 800mW N and P-Channel 3.2A,2.5A 90 mOhm @ 3.2A,4.5V 1.5V @ 250μA 3nC @ 4.5V 270pF @ 10V
FDMJ1032C
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 3.2A/2.5A SC75
- 800mW N and P-Channel 3.2A,2.5A 90 mOhm @ 3.2A,4.5V 1.5V @ 250μA 3nC @ 4.5V 270pF @ 10V