- FET Feature：
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- Rds On (Max) @ Id，Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Selected conditions:
Discover 3 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Alpha & Omega Semiconductor Inc. |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 4WLCSP
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Logic Level Gate | - | - | - | - | 10.4nC @ 4.5V | - | ||
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Alpha & Omega Semiconductor Inc. |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 4WLCSP
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Logic Level Gate | - | - | - | - | 9.1nC @ 4.5V | - | ||
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Alpha & Omega Semiconductor Inc. |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 4WLCSP
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Standard | 20V | 6A | 35 mOhm @ 3A，4.5V | 1.5V @ 250μA | 10.4nC @ 4.5V | 1200pF @ 10V |
