Drain to Source Voltage (Vdss):
Discover 147 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
SI3932DV-T1-GE3
Vishay Siliconix
12,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 3.7A 6-TSOP
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 1.4W 2 N-Channel (Dual) Logic Level Gate 30V 3.7A 58 mOhm @ 3.4A,10V 2.2V @ 250μA 6nC @ 10V 235pF @ 15V
SI3932DV-T1-GE3
Vishay Siliconix
13,024
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 3.7A 6-TSOP
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 1.4W 2 N-Channel (Dual) Logic Level Gate 30V 3.7A 58 mOhm @ 3.4A,10V 2.2V @ 250μA 6nC @ 10V 235pF @ 15V
SI3932DV-T1-GE3
Vishay Siliconix
13,024
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 3.7A 6-TSOP
- TrenchFET -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 1.4W 2 N-Channel (Dual) Logic Level Gate 30V 3.7A 58 mOhm @ 3.4A,10V 2.2V @ 250μA 6nC @ 10V 235pF @ 15V
SI3900DV-T1-E3
Vishay Siliconix
18,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 2A 6-TSOP
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 830mW 2 N-Channel (Dual) Logic Level Gate 20V 2A 125 mOhm @ 2.4A,4.5V 1.5V @ 250μA 4nC @ 4.5V -
SI3900DV-T1-E3
Vishay Siliconix
20,088
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 2A 6-TSOP
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 830mW 2 N-Channel (Dual) Logic Level Gate 20V 2A 125 mOhm @ 2.4A,4.5V 1.5V @ 250μA 4nC @ 4.5V -
SI3900DV-T1-E3
Vishay Siliconix
20,088
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 2A 6-TSOP
- TrenchFET -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 830mW 2 N-Channel (Dual) Logic Level Gate 20V 2A 125 mOhm @ 2.4A,4.5V 1.5V @ 250μA 4nC @ 4.5V -
AO6608
Alpha & Omega Semiconductor Inc.
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET ARRAY N/P-CH 30/20V 6TSOP
Tape & Reel (TR) - -55°C ~ 150°C (TJ) SC-74,SOT-457 1.25W (Ta) N and P-Channel Complementary Standard 30V,20V 3.4A (Ta),3.3A (Ta) 60 mOhm @ 3.4A,10V,75 mOhm @ 3.3A,4.5V 1.5V @ 250μA,1V @ 250μA 3nC @ 4.5V,10nC @ 4.5V 235pF @ 15V,510pF @ 10V
AO6608
Alpha & Omega Semiconductor Inc.
4,535
3 days
-
MOQ: 1  MPQ: 1
MOSFET ARRAY N/P-CH 30/20V 6TSOP
Cut Tape (CT) - -55°C ~ 150°C (TJ) SC-74,SOT-457 1.25W (Ta) N and P-Channel Complementary Standard 30V,20V 3.4A (Ta),3.3A (Ta) 60 mOhm @ 3.4A,10V,75 mOhm @ 3.3A,4.5V 1.5V @ 250μA,1V @ 250μA 3nC @ 4.5V,10nC @ 4.5V 235pF @ 15V,510pF @ 10V
AO6608
Alpha & Omega Semiconductor Inc.
4,535
3 days
-
MOQ: 1  MPQ: 1
MOSFET ARRAY N/P-CH 30/20V 6TSOP
- - -55°C ~ 150°C (TJ) SC-74,SOT-457 1.25W (Ta) N and P-Channel Complementary Standard 30V,20V 3.4A (Ta),3.3A (Ta) 60 mOhm @ 3.4A,10V,75 mOhm @ 3.3A,4.5V 1.5V @ 250μA,1V @ 250μA 3nC @ 4.5V,10nC @ 4.5V 235pF @ 15V,510pF @ 10V
SI3585CDV-T1-GE3
Vishay Siliconix
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 3.9A 6TSOP
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 1.4W,1.3W N and P-Channel Logic Level Gate 20V 3.9A,2.1A 58 mOhm @ 2.5A,4.5V 1.5V @ 250μA 4.8nC @ 10V 150pF @ 10V
SI3585CDV-T1-GE3
Vishay Siliconix
4,752
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 3.9A 6TSOP
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 1.4W,1.3W N and P-Channel Logic Level Gate 20V 3.9A,2.1A 58 mOhm @ 2.5A,4.5V 1.5V @ 250μA 4.8nC @ 10V 150pF @ 10V
SI3585CDV-T1-GE3
Vishay Siliconix
4,752
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 3.9A 6TSOP
- TrenchFET -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 1.4W,1.3W N and P-Channel Logic Level Gate 20V 3.9A,2.1A 58 mOhm @ 2.5A,4.5V 1.5V @ 250μA 4.8nC @ 10V 150pF @ 10V
SI3552DV-T1-E3
Vishay Siliconix
6,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 6TSOP
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 1.15W N and P-Channel Logic Level Gate 30V - 105 mOhm @ 2.5A,10V 1V @ 250μA (Min) 3.2nC @ 5V -
SI3552DV-T1-E3
Vishay Siliconix
9,877
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 6TSOP
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 1.15W N and P-Channel Logic Level Gate 30V - 105 mOhm @ 2.5A,10V 1V @ 250μA (Min) 3.2nC @ 5V -
SI3552DV-T1-E3
Vishay Siliconix
9,877
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 6TSOP
- TrenchFET -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 1.15W N and P-Channel Logic Level Gate 30V - 105 mOhm @ 2.5A,10V 1V @ 250μA (Min) 3.2nC @ 5V -
SQ3989EV-T1_GE3
Vishay Siliconix
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 P-CH 30V 2.5A 6TSOP
Tape & Reel (TR) Automotive,AEC-Q101,TrenchFET -55°C ~ 175°C (TJ) SOT-23-6 Thin,TSOT-23-6 1.67W 2 P-Channel (Dual) Standard 30V 2.5A (Tc) 155 mOhm @ 400mA,10V 1.5V @ 250μA 11.1nC @ 10V -
SQ3989EV-T1_GE3
Vishay Siliconix
4,754
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 P-CH 30V 2.5A 6TSOP
Cut Tape (CT) Automotive,AEC-Q101,TrenchFET -55°C ~ 175°C (TJ) SOT-23-6 Thin,TSOT-23-6 1.67W 2 P-Channel (Dual) Standard 30V 2.5A (Tc) 155 mOhm @ 400mA,10V 1.5V @ 250μA 11.1nC @ 10V -
SQ3989EV-T1_GE3
Vishay Siliconix
4,754
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 P-CH 30V 2.5A 6TSOP
- Automotive,AEC-Q101,TrenchFET -55°C ~ 175°C (TJ) SOT-23-6 Thin,TSOT-23-6 1.67W 2 P-Channel (Dual) Standard 30V 2.5A (Tc) 155 mOhm @ 400mA,10V 1.5V @ 250μA 11.1nC @ 10V -
AO6604
Alpha & Omega Semiconductor Inc.
30,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 6-TSOP
Tape & Reel (TR) - -55°C ~ 150°C (TJ) SC-74,SOT-457 1.1W N and P-Channel Complementary Logic Level Gate 20V 3.4A,2.5A 60 mOhm @ 3.4A,4.5V 1V @ 250μA 3.8nC @ 4.5V 320pF @ 10V
AO6604
Alpha & Omega Semiconductor Inc.
2,122
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 6-TSOP
Cut Tape (CT) - -55°C ~ 150°C (TJ) SC-74,SOT-457 1.1W N and P-Channel Complementary Logic Level Gate 20V 3.4A,2.5A 60 mOhm @ 3.4A,4.5V 1V @ 250μA 3.8nC @ 4.5V 320pF @ 10V