- Manufacturer：
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- Packaging：
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- Operating Temperature：
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- Package / Case：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id，Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Selected conditions:
Discover 20 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Toshiba Semiconductor and Storage |
36,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 4A UDFN6
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Tape & Reel (TR) | - | 150°C (TJ) | 6-WDFN Exposed Pad | 1W | 2 N-Channel (Dual) | Logic Level Gate，1.8V Drive | 30V | 4A | 84 mOhm @ 2A，4.5V | 1V @ 1mA | 1.8nC @ 4.5V | 129pF @ 15V | |||
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Toshiba Semiconductor and Storage |
38,222
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 4A UDFN6
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Cut Tape (CT) | - | 150°C (TJ) | 6-WDFN Exposed Pad | 1W | 2 N-Channel (Dual) | Logic Level Gate，1.8V Drive | 30V | 4A | 84 mOhm @ 2A，4.5V | 1V @ 1mA | 1.8nC @ 4.5V | 129pF @ 15V | |||
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Toshiba Semiconductor and Storage |
38,222
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3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 4A UDFN6
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- | - | 150°C (TJ) | 6-WDFN Exposed Pad | 1W | 2 N-Channel (Dual) | Logic Level Gate，1.8V Drive | 30V | 4A | 84 mOhm @ 2A，4.5V | 1V @ 1mA | 1.8nC @ 4.5V | 129pF @ 15V | |||
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Toshiba Semiconductor and Storage |
3,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 4A 2-1Y1A
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Tape & Reel (TR) | - | 150°C (TJ) | 6-WDFN Exposed Pad | 1W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 45 mOhm @ 3.5A，10V | 1.2V @ 1mA | 6.74nC @ 4.5V | 480pF @ 10V | |||
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Toshiba Semiconductor and Storage |
3,590
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 4A 2-1Y1A
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Cut Tape (CT) | - | 150°C (TJ) | 6-WDFN Exposed Pad | 1W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 45 mOhm @ 3.5A，10V | 1.2V @ 1mA | 6.74nC @ 4.5V | 480pF @ 10V | |||
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Toshiba Semiconductor and Storage |
3,590
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 4A 2-1Y1A
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- | - | 150°C (TJ) | 6-WDFN Exposed Pad | 1W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 45 mOhm @ 3.5A，10V | 1.2V @ 1mA | 6.74nC @ 4.5V | 480pF @ 10V | |||
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Toshiba Semiconductor and Storage |
3,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 4A 2-2Y1A
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Tape & Reel (TR) | - | 150°C (TJ) | 6-WDFN Exposed Pad | 1W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 95 mOhm @ 1.5A，4.5V | 1V @ 1mA | 4.6nC @ 4.5V | 290pF @ 10V | |||
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Toshiba Semiconductor and Storage |
5,367
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 4A 2-2Y1A
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Cut Tape (CT) | - | 150°C (TJ) | 6-WDFN Exposed Pad | 1W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 95 mOhm @ 1.5A，4.5V | 1V @ 1mA | 4.6nC @ 4.5V | 290pF @ 10V | |||
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Toshiba Semiconductor and Storage |
5,367
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 4A 2-2Y1A
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- | - | 150°C (TJ) | 6-WDFN Exposed Pad | 1W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 95 mOhm @ 1.5A，4.5V | 1V @ 1mA | 4.6nC @ 4.5V | 290pF @ 10V | |||
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ON Semiconductor |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 2.8A UDFN
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 6-UDFN Exposed Pad | 500mW | 2 P-Channel (Dual) | Logic Level Gate | 20V | 2.8A | 50 mOhm @ 4A，4.5V | 1V @ 250μA | 10.4nC @ 4.5V | 920pF @ 15V | |||
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ON Semiconductor |
2,935
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 2.8A UDFN
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 6-UDFN Exposed Pad | 500mW | 2 P-Channel (Dual) | Logic Level Gate | 20V | 2.8A | 50 mOhm @ 4A，4.5V | 1V @ 250μA | 10.4nC @ 4.5V | 920pF @ 15V | |||
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ON Semiconductor |
2,935
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 2.8A UDFN
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- | - | -55°C ~ 150°C (TJ) | 6-UDFN Exposed Pad | 500mW | 2 P-Channel (Dual) | Logic Level Gate | 20V | 2.8A | 50 mOhm @ 4A，4.5V | 1V @ 250μA | 10.4nC @ 4.5V | 920pF @ 15V | |||
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Toshiba Semiconductor and Storage |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V 4A UDFN6
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Tape & Reel (TR) | - | - | 6-WDFN Exposed Pad | - | N and P-Channel | Standard | 20V | 4A | - | - | - | - | |||
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Toshiba Semiconductor and Storage |
610
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V 4A UDFN6
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Cut Tape (CT) | - | - | 6-WDFN Exposed Pad | - | N and P-Channel | Standard | 20V | 4A | - | - | - | - | |||
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Toshiba Semiconductor and Storage |
610
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V 4A UDFN6
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- | - | - | 6-WDFN Exposed Pad | - | N and P-Channel | Standard | 20V | 4A | - | - | - | - | |||
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ON Semiconductor |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2 N-CH 30V 9.1A 6UDFN
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Tape & Reel (TR) | μCool | -55°C ~ 150°C (TJ) | 6-UDFN Exposed Pad | 2.63W | 2 N-Channel (Dual) | Standard | 30V | 9.1A (Ta) | 21 mOhm @ 6A，10V | 1.1V @ 250μA | 9nC @ 4.5V | 460pF @ 15V | |||
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ON Semiconductor |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2 N-CH 30V 9.1A 6UDFN
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Cut Tape (CT) | μCool | -55°C ~ 150°C (TJ) | 6-UDFN Exposed Pad | 2.63W | 2 N-Channel (Dual) | Standard | 30V | 9.1A (Ta) | 21 mOhm @ 6A，10V | 1.1V @ 250μA | 9nC @ 4.5V | 460pF @ 15V | |||
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ON Semiconductor |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2 N-CH 30V 9.1A 6UDFN
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- | μCool | -55°C ~ 150°C (TJ) | 6-UDFN Exposed Pad | 2.63W | 2 N-Channel (Dual) | Standard | 30V | 9.1A (Ta) | 21 mOhm @ 6A，10V | 1.1V @ 250μA | 9nC @ 4.5V | 460pF @ 15V | |||
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ON Semiconductor |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2 N-CH 30V 9.1A 6UDFN
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Tape & Reel (TR) | μCool | -55°C ~ 150°C (TJ) | 6-UDFN Exposed Pad | 2.63W | 2 N-Channel (Dual) | Standard | 30V | 9.1A (Ta) | 21 mOhm @ 6A，10V | 1.1V @ 250μA | 9nC @ 4.5V | 460pF @ 15V | |||
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ON Semiconductor |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 2.8A UDFN
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 6-UDFN Exposed Pad | 500mW | 2 P-Channel (Dual) | Logic Level Gate | 20V | 2.8A | 50 mOhm @ 4A，4.5V | 1V @ 250μA | 10.4nC @ 4.5V | 920pF @ 15V |
