- Manufacturer:
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- Operating Temperature:
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- Mounting Type:
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- FET Type:
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- FET Feature:
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- Current - Continuous Drain (Id) @ 25°C:
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- Rds On (Max) @ Id,Vgs:
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- Vgs(th) (Max) @ Id:
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- Gate Charge (Qg) (Max) @ Vgs:
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Discover 61 products
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Mounting Type | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id,Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | ||
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Mounting Type | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id,Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | ||
EPC |
5,500
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
TRANS GAN SYM HALF BRDG 80V
|
Tape & Reel (TR) | eGaN | - | Surface Mount | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 23A | 5.5 mOhm @ 20A,5V | 2.5V @ 7mA | 6.5nC @ 5V | 7600pF @ 40V | ||||
EPC |
5,884
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
TRANS GAN SYM HALF BRDG 80V
|
Cut Tape (CT) | eGaN | - | Surface Mount | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 23A | 5.5 mOhm @ 20A,5V | 2.5V @ 7mA | 6.5nC @ 5V | 7600pF @ 40V | ||||
EPC |
5,884
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
TRANS GAN SYM HALF BRDG 80V
|
- | eGaN | - | Surface Mount | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 23A | 5.5 mOhm @ 20A,5V | 2.5V @ 7mA | 6.5nC @ 5V | 7600pF @ 40V | ||||
EPC |
20,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
TRANS GAN 2N-CH 100V BUMPED DIE
|
Tape & Reel (TR) | eGaN | -40°C ~ 150°C (TJ) | Surface Mount | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 1.7A | 70 mOhm @ 2A,5V | 2.5V @ 600μA | 0.73nC @ 5V | 75pF @ 50V | ||||
EPC |
22,285
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
TRANS GAN 2N-CH 100V BUMPED DIE
|
Cut Tape (CT) | eGaN | -40°C ~ 150°C (TJ) | Surface Mount | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 1.7A | 70 mOhm @ 2A,5V | 2.5V @ 600μA | 0.73nC @ 5V | 75pF @ 50V | ||||
EPC |
22,285
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
TRANS GAN 2N-CH 100V BUMPED DIE
|
- | eGaN | -40°C ~ 150°C (TJ) | Surface Mount | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 1.7A | 70 mOhm @ 2A,5V | 2.5V @ 600μA | 0.73nC @ 5V | 75pF @ 50V | ||||
EPC |
6,500
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2 N-CH 30V 9.5A/38A DIE
|
Tape & Reel (TR) | eGaN | -40°C ~ 150°C (TJ) | Surface Mount | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 10A (Ta),40A (Ta) | 8.2 mOhm @ 25A,5V,2.1 mOhm @ 25A,5V | 2.5V @ 4mA,2.5V @ 16mA | 4.9nC @ 15V,19nC @ 15V | 475pF @ 15V,1960pF @ 15V | ||||
EPC |
6,546
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2 N-CH 30V 9.5A/38A DIE
|
Cut Tape (CT) | eGaN | -40°C ~ 150°C (TJ) | Surface Mount | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 10A (Ta),40A (Ta) | 8.2 mOhm @ 25A,5V,2.1 mOhm @ 25A,5V | 2.5V @ 4mA,2.5V @ 16mA | 4.9nC @ 15V,19nC @ 15V | 475pF @ 15V,1960pF @ 15V | ||||
EPC |
6,546
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2 N-CH 30V 9.5A/38A DIE
|
- | eGaN | -40°C ~ 150°C (TJ) | Surface Mount | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 10A (Ta),40A (Ta) | 8.2 mOhm @ 25A,5V,2.1 mOhm @ 25A,5V | 2.5V @ 4mA,2.5V @ 16mA | 4.9nC @ 15V,19nC @ 15V | 475pF @ 15V,1960pF @ 15V | ||||
EPC |
6,500
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2 N-CHANNEL 60V 23A DIE
|
Tape & Reel (TR) | eGaN | -40°C ~ 150°C (TJ) | Surface Mount | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A (Tj) | 4.4 mOhm @ 20A,5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | ||||
EPC |
6,795
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2 N-CHANNEL 60V 23A DIE
|
Cut Tape (CT) | eGaN | -40°C ~ 150°C (TJ) | Surface Mount | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A (Tj) | 4.4 mOhm @ 20A,5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | ||||
EPC |
6,795
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2 N-CHANNEL 60V 23A DIE
|
- | eGaN | -40°C ~ 150°C (TJ) | Surface Mount | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A (Tj) | 4.4 mOhm @ 20A,5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | ||||
EPC |
2,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2NCH 100V 23A DIE
|
Tape & Reel (TR) | eGaN | -40°C ~ 150°C (TJ) | Surface Mount | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A,5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | ||||
EPC |
2,457
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2NCH 100V 23A DIE
|
Cut Tape (CT) | eGaN | -40°C ~ 150°C (TJ) | Surface Mount | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A,5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | ||||
EPC |
2,457
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2NCH 100V 23A DIE
|
- | eGaN | -40°C ~ 150°C (TJ) | Surface Mount | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A,5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | ||||
EPC |
25,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
TRANS GAN 2N-CH 120V BUMPED DIE
|
Tape & Reel (TR) | eGaN | -40°C ~ 150°C (TJ) | Surface Mount | 2 N-Channel (Dual) Common Source | GaNFET (Gallium Nitride) | 120V | 3.4A | 60 mOhm @ 4A,5V | 2.5V @ 700μA | 0.8nC @ 5V | 80pF @ 60V | ||||
EPC |
26,948
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
TRANS GAN 2N-CH 120V BUMPED DIE
|
Cut Tape (CT) | eGaN | -40°C ~ 150°C (TJ) | Surface Mount | 2 N-Channel (Dual) Common Source | GaNFET (Gallium Nitride) | 120V | 3.4A | 60 mOhm @ 4A,5V | 2.5V @ 700μA | 0.8nC @ 5V | 80pF @ 60V | ||||
EPC |
26,948
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
TRANS GAN 2N-CH 120V BUMPED DIE
|
- | eGaN | -40°C ~ 150°C (TJ) | Surface Mount | 2 N-Channel (Dual) Common Source | GaNFET (Gallium Nitride) | 120V | 3.4A | 60 mOhm @ 4A,5V | 2.5V @ 700μA | 0.8nC @ 5V | 80pF @ 60V | ||||
EPC |
9,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
TRANS GAN ASYMMETRICAL HALF BRID
|
Tape & Reel (TR) | eGaN | -40°C ~ 150°C (TJ) | Surface Mount | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 10A (Ta),40A (Ta) | 8.2 mOhm @ 25A,5V,2.1 mOhm @ 25A,5V | 2.5V @ 4mA,2.5V @ 16mA | 4.9nC @ 15V,19nC @ 15V | 475pF @ 15V,1960pF @ 15V | ||||
EPC |
9,390
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
TRANS GAN ASYMMETRICAL HALF BRID
|
Cut Tape (CT) | eGaN | -40°C ~ 150°C (TJ) | Surface Mount | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 10A (Ta),40A (Ta) | 8.2 mOhm @ 25A,5V,2.1 mOhm @ 25A,5V | 2.5V @ 4mA,2.5V @ 16mA | 4.9nC @ 15V,19nC @ 15V | 475pF @ 15V,1960pF @ 15V |