FETs, MOSFETs - Arrays - Zui Ai Technology（Taiwan）Company.

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Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	FET Feature	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	FET Feature	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
	SSM6N57NU,LF	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2N-CH 30V 4A UDFN6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 4A UDFN6	Tape & Reel (TR)	Standard	46 mOhm @ 2A，4.5V	1V @ 1mA	4nC @ 4.5V	310pF @ 10V
	SSM6N57NU,LF	Toshiba Semiconductor and Storage	28	3 days	-	MOSFET 2N-CH 30V 4A UDFN6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 4A UDFN6	Cut Tape (CT)	Standard	46 mOhm @ 2A，4.5V	1V @ 1mA	4nC @ 4.5V	310pF @ 10V
	SSM6N57NU,LF	Toshiba Semiconductor and Storage	28	3 days	-	MOSFET 2N-CH 30V 4A UDFN6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 4A UDFN6	-	Standard	46 mOhm @ 2A，4.5V	1V @ 1mA	4nC @ 4.5V	310pF @ 10V
	SSM6N55NU,LF(T	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2N-CH 30V 4A UDFN6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 4A UDFN6	Tape & Reel (TR)	Logic Level Gate	46 mOhm @ 4A，10V	2.5V @ 100μA	2.5nC @ 4.5V	280pF @ 15V
	SSM6N55NU,LF(T	Toshiba Semiconductor and Storage	1	3 days	-	MOSFET 2N-CH 30V 4A UDFN6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 4A UDFN6	Cut Tape (CT)	Logic Level Gate	46 mOhm @ 4A，10V	2.5V @ 100μA	2.5nC @ 4.5V	280pF @ 15V
	SSM6N55NU,LF(T	Toshiba Semiconductor and Storage	Inquiry	-	-	MOSFET 2N-CH 30V 4A UDFN6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 4A UDFN6	-	Logic Level Gate	46 mOhm @ 4A，10V	2.5V @ 100μA	2.5nC @ 4.5V	280pF @ 15V

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