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- Current - Continuous Drain (Id) @ 25°C:
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- Rds On (Max) @ Id,Vgs:
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Discover 95 products
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id,Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | ||
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id,Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | ||
ROHM Semiconductor |
102
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 1200V 120A MODULE
|
Bulk | - | -40°C ~ 150°C (TJ) | Module | Module | 780W | 2 N-Channel (Half Bridge) | Standard | 1200V (1.2kV) | 120A | - | 2.7V @ 22mA | - | 14000pF @ 10V | ||||
ROHM Semiconductor |
33
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 1200V 180A MODULE
|
Bulk | - | -40°C ~ 150°C (TJ) | Module | Module | 1130W | 2 N-Channel (Half Bridge) | Standard | 1200V (1.2kV) | 180A | - | 4V @ 35.2mA | - | 23000pF @ 10V | ||||
EPC |
25,000
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2NCH 120V 3.4A DIE
|
Tape & Reel (TR) | eGaN | -40°C ~ 150°C (TJ) | Die | Die | - | 2 N-Channel (Dual) Common Drain | GaNFET (Gallium Nitride) | 120V | 3.4A | 60 mOhm @ 4A,5V | 2.5V @ 700μA | 0.8nC @ 5V | 80pF @ 60V | ||||
EPC |
25,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2NCH 120V 3.4A DIE
|
Cut Tape (CT) | eGaN | -40°C ~ 150°C (TJ) | Die | Die | - | 2 N-Channel (Dual) Common Drain | GaNFET (Gallium Nitride) | 120V | 3.4A | 60 mOhm @ 4A,5V | 2.5V @ 700μA | 0.8nC @ 5V | 80pF @ 60V | ||||
EPC |
25,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2NCH 120V 3.4A DIE
|
- | eGaN | -40°C ~ 150°C (TJ) | Die | Die | - | 2 N-Channel (Dual) Common Drain | GaNFET (Gallium Nitride) | 120V | 3.4A | 60 mOhm @ 4A,5V | 2.5V @ 700μA | 0.8nC @ 5V | 80pF @ 60V | ||||
Cree/Wolfspeed |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 1200V 444A MODULE
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Bulk | Z-Rec | 175°C (TJ) | Module | Module | 3000W | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 444A (Tc) | 4.3 mOhm @ 400A,20V | 4V @ 105mA | 1127nC @ 20V | - | ||||
Diodes Incorporated |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
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MOSFET 2P-CH 60V 3.3A 8SO
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | 1.2W | 2 P-Channel (Dual) | Standard | 60V | 3.3A | 105 mOhm @ 4.5A,10V | 3V @ 250μA | 17.2nC @ 10V | 969pF @ 30V | ||||
Diodes Incorporated |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 60V 3.3A 8SO
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | 1.2W | 2 P-Channel (Dual) | Standard | 60V | 3.3A | 105 mOhm @ 4.5A,10V | 3V @ 250μA | 17.2nC @ 10V | 969pF @ 30V | ||||
Diodes Incorporated |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 60V 3.3A 8SO
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- | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | 1.2W | 2 P-Channel (Dual) | Standard | 60V | 3.3A | 105 mOhm @ 4.5A,10V | 3V @ 250μA | 17.2nC @ 10V | 969pF @ 30V | ||||
Diodes Incorporated |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 3.8A 6UDFN
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
Diodes Incorporated |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 3.8A 6UDFN
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
Diodes Incorporated |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V SOT563
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
Diodes Incorporated |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V SOT563
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
Diodes Incorporated |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 50V 0.36A SOT363
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
Diodes Incorporated |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 50V 0.36A SOT363
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
Diodes Incorporated |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 0.25A
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
Diodes Incorporated |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 0.25A
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
Diodes Incorporated |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2NCH 50V 200MA SOT363
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
Diodes Incorporated |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2NCH 50V 200MA SOT363
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
Diodes Incorporated |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V SOT963
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- | - | - | - | - | - | - | - | - | - | - | - | - | - |