Drain to Source Voltage (Vdss):
Discover 95 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
BSM120D12P2C005
ROHM Semiconductor
102
3 days
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 1200V 120A MODULE
Bulk - -40°C ~ 150°C (TJ) Module Module 780W 2 N-Channel (Half Bridge) Standard 1200V (1.2kV) 120A - 2.7V @ 22mA - 14000pF @ 10V
BSM180D12P2C101
ROHM Semiconductor
33
3 days
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 1200V 180A MODULE
Bulk - -40°C ~ 150°C (TJ) Module Module 1130W 2 N-Channel (Half Bridge) Standard 1200V (1.2kV) 180A - 4V @ 35.2mA - 23000pF @ 10V
EPC2110
EPC
25,000
3 days
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MOQ: 1  MPQ: 1
MOSFET 2NCH 120V 3.4A DIE
Tape & Reel (TR) eGaN -40°C ~ 150°C (TJ) Die Die - 2 N-Channel (Dual) Common Drain GaNFET (Gallium Nitride) 120V 3.4A 60 mOhm @ 4A,5V 2.5V @ 700μA 0.8nC @ 5V 80pF @ 60V
EPC2110
EPC
25,000
3 days
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MOQ: 1  MPQ: 1
MOSFET 2NCH 120V 3.4A DIE
Cut Tape (CT) eGaN -40°C ~ 150°C (TJ) Die Die - 2 N-Channel (Dual) Common Drain GaNFET (Gallium Nitride) 120V 3.4A 60 mOhm @ 4A,5V 2.5V @ 700μA 0.8nC @ 5V 80pF @ 60V
EPC2110
EPC
25,000
3 days
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MOQ: 1  MPQ: 1
MOSFET 2NCH 120V 3.4A DIE
- eGaN -40°C ~ 150°C (TJ) Die Die - 2 N-Channel (Dual) Common Drain GaNFET (Gallium Nitride) 120V 3.4A 60 mOhm @ 4A,5V 2.5V @ 700μA 0.8nC @ 5V 80pF @ 60V
CAS325M12HM2
Cree/Wolfspeed
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 1200V 444A MODULE
Bulk Z-Rec 175°C (TJ) Module Module 3000W 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 444A (Tc) 4.3 mOhm @ 400A,20V 4V @ 105mA 1127nC @ 20V -
DMP6110SSD-13
Diodes Incorporated
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 3.3A 8SO
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.2W 2 P-Channel (Dual) Standard 60V 3.3A 105 mOhm @ 4.5A,10V 3V @ 250μA 17.2nC @ 10V 969pF @ 30V
DMP6110SSD-13
Diodes Incorporated
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 3.3A 8SO
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.2W 2 P-Channel (Dual) Standard 60V 3.3A 105 mOhm @ 4.5A,10V 3V @ 250μA 17.2nC @ 10V 969pF @ 30V
DMP6110SSD-13
Diodes Incorporated
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 3.3A 8SO
- - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.2W 2 P-Channel (Dual) Standard 60V 3.3A 105 mOhm @ 4.5A,10V 3V @ 250μA 17.2nC @ 10V 969pF @ 30V
DMP2160UFDB-7
Diodes Incorporated
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 3.8A 6UDFN
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DMP2160UFDB-7
Diodes Incorporated
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 3.8A 6UDFN
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DMG1016VQ-7
Diodes Incorporated
Inquiry
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MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V SOT563
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DMG1016VQ-7
Diodes Incorporated
Inquiry
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MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V SOT563
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DMN53D0LDW-13
Diodes Incorporated
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 50V 0.36A SOT363
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DMN53D0LDW-13
Diodes Incorporated
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 50V 0.36A SOT363
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DMN33D8LDW-7
Diodes Incorporated
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 0.25A
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DMN33D8LDW-7
Diodes Incorporated
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 0.25A
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BSS138DWQ-7
Diodes Incorporated
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2NCH 50V 200MA SOT363
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BSS138DWQ-7
Diodes Incorporated
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2NCH 50V 200MA SOT363
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DMC31D5UDJ-7
Diodes Incorporated
Inquiry
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MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V SOT963
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