FETs, MOSFETs - Arrays - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Operating Temperature：

Package / Case：

Supplier Device Package：

Power - Max：

FET Feature：

Drain to Source Voltage (Vdss)：

Current - Continuous Drain (Id) @ 25°C：

Rds On (Max) @ Id，Vgs：

Vgs(th) (Max) @ Id：

Gate Charge (Qg) (Max) @ Vgs：

Input Capacitance (Ciss) (Max) @ Vds：

Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Operating Temperature	Package / Case	Supplier Device Package	Power - Max	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Operating Temperature	Package / Case	Supplier Device Package	Power - Max	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
	DMHC3025LSD-13	Diodes Incorporated	15,000	3 days	-	MOSFET 2N/2P-CH 30V 8SO MOQ: 1 MPQ: 1	MOSFET 2N/2P-CH 30V 8SO	Tape & Reel (TR)	-	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	1.5W	Logic Level Gate	30V	6A，4.2A	25 mOhm @ 5A，10V	2V @ 250μA	11.7nC @ 10V	590pF @ 15V
	DMHC3025LSD-13	Diodes Incorporated	15,961	3 days	-	MOSFET 2N/2P-CH 30V 8SO MOQ: 1 MPQ: 1	MOSFET 2N/2P-CH 30V 8SO	Cut Tape (CT)	-	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	1.5W	Logic Level Gate	30V	6A，4.2A	25 mOhm @ 5A，10V	2V @ 250μA	11.7nC @ 10V	590pF @ 15V
	DMHC3025LSD-13	Diodes Incorporated	15,961	3 days	-	MOSFET 2N/2P-CH 30V 8SO MOQ: 1 MPQ: 1	MOSFET 2N/2P-CH 30V 8SO	-	-	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	1.5W	Logic Level Gate	30V	6A，4.2A	25 mOhm @ 5A，10V	2V @ 250μA	11.7nC @ 10V	590pF @ 15V
	ZXMHC3A01T8TA	Diodes Incorporated	7,000	3 days	-	MOSFET 2N/2P-CH 30V 2.7A/2A SM8 MOQ: 1 MPQ: 1	MOSFET 2N/2P-CH 30V 2.7A/2A SM8	Tape & Reel (TR)	-	-55°C ~ 150°C (TJ)	SOT-223-8	SM8	1.3W	Logic Level Gate	30V	2.7A，2A	120 mOhm @ 2.5A，10V	3V @ 250μA	3.9nC @ 10V	190pF @ 25V
	ZXMHC3A01T8TA	Diodes Incorporated	8,466	3 days	-	MOSFET 2N/2P-CH 30V 2.7A/2A SM8 MOQ: 1 MPQ: 1	MOSFET 2N/2P-CH 30V 2.7A/2A SM8	Cut Tape (CT)	-	-55°C ~ 150°C (TJ)	SOT-223-8	SM8	1.3W	Logic Level Gate	30V	2.7A，2A	120 mOhm @ 2.5A，10V	3V @ 250μA	3.9nC @ 10V	190pF @ 25V
	ZXMHC3A01T8TA	Diodes Incorporated	8,466	3 days	-	MOSFET 2N/2P-CH 30V 2.7A/2A SM8 MOQ: 1 MPQ: 1	MOSFET 2N/2P-CH 30V 2.7A/2A SM8	-	-	-55°C ~ 150°C (TJ)	SOT-223-8	SM8	1.3W	Logic Level Gate	30V	2.7A，2A	120 mOhm @ 2.5A，10V	3V @ 250μA	3.9nC @ 10V	190pF @ 25V
	ZXMHC6A07T8TA	Diodes Incorporated	5,000	3 days	-	MOSFET 2N/2P-CH 60V SM8 MOQ: 1 MPQ: 1	MOSFET 2N/2P-CH 60V SM8	Tape & Reel (TR)	-	-55°C ~ 150°C (TJ)	SOT-223-8	SM8	1.3W	Logic Level Gate	60V	1.6A，1.3A	300 mOhm @ 1.8A，10V	3V @ 250μA	3.2nC @ 10V	166pF @ 40V
	ZXMHC6A07T8TA	Diodes Incorporated	5,298	3 days	-	MOSFET 2N/2P-CH 60V SM8 MOQ: 1 MPQ: 1	MOSFET 2N/2P-CH 60V SM8	Cut Tape (CT)	-	-55°C ~ 150°C (TJ)	SOT-223-8	SM8	1.3W	Logic Level Gate	60V	1.6A，1.3A	300 mOhm @ 1.8A，10V	3V @ 250μA	3.2nC @ 10V	166pF @ 40V
	DMHC4035LSD-13	Diodes Incorporated	2,500	3 days	-	MOSFET 2N/2P-CH 40V 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2N/2P-CH 40V 8-SOIC	Tape & Reel (TR)	-	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	1.5W	Logic Level Gate	40V	4.5A，3.7A	45 mOhm @ 3.9A，10V	3V @ 250μA	12.5nC @ 10V	574pF @ 20V
	DMHC4035LSD-13	Diodes Incorporated	2,816	3 days	-	MOSFET 2N/2P-CH 40V 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2N/2P-CH 40V 8-SOIC	Cut Tape (CT)	-	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	1.5W	Logic Level Gate	40V	4.5A，3.7A	45 mOhm @ 3.9A，10V	3V @ 250μA	12.5nC @ 10V	574pF @ 20V
	DMHC4035LSD-13	Diodes Incorporated	2,816	3 days	-	MOSFET 2N/2P-CH 40V 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2N/2P-CH 40V 8-SOIC	-	-	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	1.5W	Logic Level Gate	40V	4.5A，3.7A	45 mOhm @ 3.9A，10V	3V @ 250μA	12.5nC @ 10V	574pF @ 20V
	ZXMHC6A07N8TC	Diodes Incorporated	50,000	3 days	-	MOSFET 2N/2P-CH 60V 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2N/2P-CH 60V 8-SOIC	Tape & Reel (TR)	-	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SOP	870mW	Logic Level Gate	60V	1.39A，1.28A	250 mOhm @ 1.8A，10V	3V @ 250μA	3.2nC @ 10V	166pF @ 40V
	ZXMHC6A07N8TC	Diodes Incorporated	50,439	3 days	-	MOSFET 2N/2P-CH 60V 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2N/2P-CH 60V 8-SOIC	Cut Tape (CT)	-	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SOP	870mW	Logic Level Gate	60V	1.39A，1.28A	250 mOhm @ 1.8A，10V	3V @ 250μA	3.2nC @ 10V	166pF @ 40V
	ZXMHC6A07N8TC	Diodes Incorporated	50,439	3 days	-	MOSFET 2N/2P-CH 60V 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2N/2P-CH 60V 8-SOIC	-	-	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SOP	870mW	Logic Level Gate	60V	1.39A，1.28A	250 mOhm @ 1.8A，10V	3V @ 250μA	3.2nC @ 10V	166pF @ 40V
	DMHC6070LSD-13	Diodes Incorporated	2,500	3 days	-	MOSFET 2N/2P-CHA 60V 3.1A 8SO MOQ: 1 MPQ: 1	MOSFET 2N/2P-CHA 60V 3.1A 8SO	Tape & Reel (TR)	-	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	1.6W	Standard	60V	3.1A，2.4A	100 mOhm @ 1A，10V	3V @ 250μA	11.5nC @ 10V	731pF @ 20V
	DMHC6070LSD-13	Diodes Incorporated	3,333	3 days	-	MOSFET 2N/2P-CHA 60V 3.1A 8SO MOQ: 1 MPQ: 1	MOSFET 2N/2P-CHA 60V 3.1A 8SO	Cut Tape (CT)	-	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	1.6W	Standard	60V	3.1A，2.4A	100 mOhm @ 1A，10V	3V @ 250μA	11.5nC @ 10V	731pF @ 20V
	DMHC6070LSD-13	Diodes Incorporated	3,333	3 days	-	MOSFET 2N/2P-CHA 60V 3.1A 8SO MOQ: 1 MPQ: 1	MOSFET 2N/2P-CHA 60V 3.1A 8SO	-	-	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	1.6W	Standard	60V	3.1A，2.4A	100 mOhm @ 1A，10V	3V @ 250μA	11.5nC @ 10V	731pF @ 20V
	ZXMHC10A07N8TC	Diodes Incorporated	5,000	3 days	-	MOSFET 2N/2P-CH 100V 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2N/2P-CH 100V 8-SOIC	Tape & Reel (TR)	-	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SOP	870mW	Standard	100V	800mA，680mA	700 mOhm @ 1.5A，10V	4V @ 250μA	2.9nC @ 10V	138pF @ 60V
	ZXMHC10A07N8TC	Diodes Incorporated	5,921	3 days	-	MOSFET 2N/2P-CH 100V 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2N/2P-CH 100V 8-SOIC	Cut Tape (CT)	-	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SOP	870mW	Standard	100V	800mA，680mA	700 mOhm @ 1.5A，10V	4V @ 250μA	2.9nC @ 10V	138pF @ 60V
	ZXMHC10A07N8TC	Diodes Incorporated	5,921	3 days	-	MOSFET 2N/2P-CH 100V 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2N/2P-CH 100V 8-SOIC	-	-	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SOP	870mW	Standard	100V	800mA，680mA	700 mOhm @ 1.5A，10V	4V @ 250μA	2.9nC @ 10V	138pF @ 60V

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