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- Drain to Source Voltage (Vdss)：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id，Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Selected conditions:
Discover 19 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Sanken |
820
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 60V 7A 15-SIP
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Tube | - | 150°C (TJ) | 15-SIP Exposed Tab，Formed Leads | 15-ZIP | Through Hole | 4.8W | Standard | 60V | 7A | 100 mOhm @ 3.5A，10V | 2V @ 250μA | - | 660pF @ 10V | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 25V 16A/20A 41PQFN
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Tape & Reel (TR) | - | -40°C ~ 150°C (TJ) | 41-PowerVFQFN | 41-PQFN (6x8) | Surface Mount | - | Logic Level Gate | 25V | 16A (Tc)，20A (Tc) | 3.9 mOhm @ 27A，10V | 2.1V @ 35μA | 15nC @ 4.5V | 1310pF @ 13V | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 25V 16A/20A 41PQFN
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Cut Tape (CT) | - | -40°C ~ 150°C (TJ) | 41-PowerVFQFN | 41-PQFN (6x8) | Surface Mount | - | Logic Level Gate | 25V | 16A (Tc)，20A (Tc) | 3.9 mOhm @ 27A，10V | 2.1V @ 35μA | 15nC @ 4.5V | 1310pF @ 13V | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 25V 16A/20A 41PQFN
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- | - | -40°C ~ 150°C (TJ) | 41-PowerVFQFN | 41-PQFN (6x8) | Surface Mount | - | Logic Level Gate | 25V | 16A (Tc)，20A (Tc) | 3.9 mOhm @ 27A，10V | 2.1V @ 35μA | 15nC @ 4.5V | 1310pF @ 13V | ||
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Sanken |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 100V 10A 12SIP
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Tube | - | 150°C (TJ) | 12-SIP | 12-SIP w/fin | Through Hole | 5W | Logic Level Gate | 100V | 10A | 80 mOhm @ 5A，10V | 2V @ 250mA | - | 1630pF @ 10V | ||
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Sanken |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 200V 10A 12SIP
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Tube | - | 150°C (TJ) | 12-SIP | 12-SIP w/fin | Through Hole | 5W | Logic Level Gate | 200V | 10A | 175 mOhm @ 5A，10V | 4V @ 1mA | - | 850pF @ 10V | ||
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Sanken |
20
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 60V 7A 15-SIP
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Tube | - | 150°C (TJ) | 15-SIP | 15-SIP | Through Hole | 4.8W | Standard | 60V | 7A | 100 mOhm @ 3.5A，10V | 2V @ 250μA | - | 660pF @ 10V | ||
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Diodes Incorporated |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 4 N-CH 14.8A VDFN5045-12
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Tape & Reel (TR) | Automotive，AEC-Q101 | -55°C ~ 150°C (TJ) | 12-VDFN Exposed Pad | V-DFN5045-12 | Surface Mount | - | Standard | - | 14.8A (Ta) | 22 mOhm @ 10A，10V | 3V @ 250μA | 8.4nC @ 4.5V | 864pF @ 30V | ||
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Vishay Siliconix |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 30V 0.83A 14DIP
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Tube | - | -55°C ~ 150°C (TJ) | - | 14-DIP | Through Hole | 2W | Logic Level Gate | 30V | 830mA | 1.75 Ohm @ 200mA，5V | 2.5V @ 1mA | - | 110pF @ 15V | ||
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Vishay Siliconix |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 30V 0.83A 14DIP
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Tube | - | -55°C ~ 150°C (TJ) | - | 14-DIP | Through Hole | 2W | Logic Level Gate | 30V | 830mA | 1.75 Ohm @ 200mA，5V | 2.5V @ 1mA | - | 110pF @ 15V | ||
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Vishay Siliconix |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 30V 0.83A 14DIP
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Tube | - | -55°C ~ 150°C (TJ) | - | 14-DIP | Through Hole | 2W | Logic Level Gate | 30V | 830mA | 1.75 Ohm @ 200mA，5V | 2.5V @ 1mA | - | 110pF @ 15V | ||
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Vishay Siliconix |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 90V 0.4A 14DIP
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Tube | - | -55°C ~ 150°C (TJ) | - | 14-DIP | Through Hole | 2W | Logic Level Gate | 90V | 400mA | 4.5 Ohm @ 1A，10V | 2.5V @ 1mA | - | 60pF @ 25V | ||
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Vishay Siliconix |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 90V 0.4A 14DIP
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Tube | - | -55°C ~ 150°C (TJ) | - | 14-DIP | Through Hole | 2W | Logic Level Gate | 90V | 400mA | 4.5 Ohm @ 1A，10V | 2.5V @ 1mA | - | 60pF @ 25V | ||
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Vishay Siliconix |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 90V 0.4A 14DIP
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Tube | - | -55°C ~ 150°C (TJ) | - | 14-DIP | Through Hole | 2W | Logic Level Gate | 90V | 400mA | 4.5 Ohm @ 1A，10V | 2.5V @ 1mA | - | 60pF @ 25V | ||
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Microsemi Corporation |
Inquiry
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-
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MOQ: 1 MPQ: 1
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POWER MODULE - SIC MOSFET
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- | - | -40°C ~ 175°C (TJ) | Module | SP3 | Chassis Mount | 750W | Standard | 1200V (1.2kV) | 147A (Tc) | 17 mOhm @ 100A，20V | 4V @ 30mA | 332nC @ 5V | 5576pF @ 1000V | |||
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Microsemi Corporation |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 100V 1A MO-036AB
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Bulk | Military，MIL-PRF-19500/597 | -55°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | MO-036AB | Through Hole | 1.4W | Standard | 100V | 1A | 700 mOhm @ 600mA，10V | 4V @ 250μA | 60nC @ 10V | - | |||
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Microsemi Corporation |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 100V 1A MO-036AB
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Bulk | Military，MIL-PRF-19500/597 | -55°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | MO-036AB | Through Hole | 1.4W | Standard | 100V | 1A | 700 mOhm @ 600mA，10V | 4V @ 250μA | 60nC @ 10V | - | |||
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Microsemi Corporation |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 100V 1A MO-036AB
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Bulk | Military，MIL-PRF-19500/597 | -55°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | MO-036AB | Through Hole | 1.4W | Standard | 100V | 1A | 700 mOhm @ 600mA，10V | 4V @ 250μA | 60nC @ 10V | - | |||
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Microsemi Corporation |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 100V 1A MO-036AB
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Bulk | - | -55°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | MO-036AB | Through Hole | 1.4W | Standard | 100V | 1A | 700 mOhm @ 600mA，10V | 4V @ 250μA | 60nC @ 10V | - |
