- Rds On (Max) @ Id，Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Selected conditions:
Discover 3 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Package / Case | Supplier Device Package | Power - Max | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Package / Case | Supplier Device Package | Power - Max | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Microsemi Corporation |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 1200V 28A SP3
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SP3 | SP3 | 125W | 28A | 98 mOhm @ 20A，20V | 2.2V @ 1mA | 49nC @ 20V | 950pF @ 1000V | |||
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Microsemi Corporation |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 1200V 55A SP3F
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SP3 | SP3 | 250W | 55A | 49 mOhm @ 40A，20V | 2.2V @ 2mA (Typ) | 98nC @ 20V | 1900pF @ 1000V | |||
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Microsemi Corporation |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 1200V 219A SP6C
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SP6 | SP6 | 925W | 219A | 12 mOhm @ 150A，20V | 2.4V @ 30mA (Typ) | 483nC @ 20V | 8400pF @ 1000V |
