- Manufacturer：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Mounting Type：
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- FET Type：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id，Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Selected conditions:
Discover 73 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Power - Max | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Power - Max | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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EPC |
5,500
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3 days |
-
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MOQ: 1 MPQ: 1
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TRANS GAN SYM HALF BRDG 80V
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Tape & Reel (TR) | eGaN | - | Die | Die | Surface Mount | - | 2 N-Channel (Half Bridge) | 80V | 23A | 5.5 mOhm @ 20A，5V | 2.5V @ 7mA | 6.5nC @ 5V | 7600pF @ 40V | ||
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EPC |
5,884
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3 days |
-
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MOQ: 1 MPQ: 1
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TRANS GAN SYM HALF BRDG 80V
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Cut Tape (CT) | eGaN | - | Die | Die | Surface Mount | - | 2 N-Channel (Half Bridge) | 80V | 23A | 5.5 mOhm @ 20A，5V | 2.5V @ 7mA | 6.5nC @ 5V | 7600pF @ 40V | ||
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EPC |
5,884
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3 days |
-
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MOQ: 1 MPQ: 1
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TRANS GAN SYM HALF BRDG 80V
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- | eGaN | - | Die | Die | Surface Mount | - | 2 N-Channel (Half Bridge) | 80V | 23A | 5.5 mOhm @ 20A，5V | 2.5V @ 7mA | 6.5nC @ 5V | 7600pF @ 40V | ||
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EPC |
20,000
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3 days |
-
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MOQ: 1 MPQ: 1
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TRANS GAN 2N-CH 100V BUMPED DIE
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Tape & Reel (TR) | eGaN | -40°C ~ 150°C (TJ) | Die | Die | Surface Mount | - | 2 N-Channel (Half Bridge) | 100V | 1.7A | 70 mOhm @ 2A，5V | 2.5V @ 600μA | 0.73nC @ 5V | 75pF @ 50V | ||
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EPC |
22,285
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3 days |
-
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MOQ: 1 MPQ: 1
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TRANS GAN 2N-CH 100V BUMPED DIE
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Cut Tape (CT) | eGaN | -40°C ~ 150°C (TJ) | Die | Die | Surface Mount | - | 2 N-Channel (Half Bridge) | 100V | 1.7A | 70 mOhm @ 2A，5V | 2.5V @ 600μA | 0.73nC @ 5V | 75pF @ 50V | ||
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EPC |
22,285
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3 days |
-
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MOQ: 1 MPQ: 1
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TRANS GAN 2N-CH 100V BUMPED DIE
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- | eGaN | -40°C ~ 150°C (TJ) | Die | Die | Surface Mount | - | 2 N-Channel (Half Bridge) | 100V | 1.7A | 70 mOhm @ 2A，5V | 2.5V @ 600μA | 0.73nC @ 5V | 75pF @ 50V | ||
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EPC |
6,500
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2 N-CH 30V 9.5A/38A DIE
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Tape & Reel (TR) | eGaN | -40°C ~ 150°C (TJ) | Die | Die | Surface Mount | - | 2 N-Channel (Half Bridge) | 30V | 10A (Ta)，40A (Ta) | 8.2 mOhm @ 25A，5V，2.1 mOhm @ 25A，5V | 2.5V @ 4mA，2.5V @ 16mA | 4.9nC @ 15V，19nC @ 15V | 475pF @ 15V，1960pF @ 15V | ||
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EPC |
6,546
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2 N-CH 30V 9.5A/38A DIE
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Cut Tape (CT) | eGaN | -40°C ~ 150°C (TJ) | Die | Die | Surface Mount | - | 2 N-Channel (Half Bridge) | 30V | 10A (Ta)，40A (Ta) | 8.2 mOhm @ 25A，5V，2.1 mOhm @ 25A，5V | 2.5V @ 4mA，2.5V @ 16mA | 4.9nC @ 15V，19nC @ 15V | 475pF @ 15V，1960pF @ 15V | ||
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EPC |
6,546
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2 N-CH 30V 9.5A/38A DIE
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- | eGaN | -40°C ~ 150°C (TJ) | Die | Die | Surface Mount | - | 2 N-Channel (Half Bridge) | 30V | 10A (Ta)，40A (Ta) | 8.2 mOhm @ 25A，5V，2.1 mOhm @ 25A，5V | 2.5V @ 4mA，2.5V @ 16mA | 4.9nC @ 15V，19nC @ 15V | 475pF @ 15V，1960pF @ 15V | ||
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EPC |
6,500
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2 N-CHANNEL 60V 23A DIE
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Tape & Reel (TR) | eGaN | -40°C ~ 150°C (TJ) | Die | Die | Surface Mount | - | 2 N-Channel (Half Bridge) | 60V | 23A (Tj) | 4.4 mOhm @ 20A，5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | ||
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EPC |
6,795
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2 N-CHANNEL 60V 23A DIE
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Cut Tape (CT) | eGaN | -40°C ~ 150°C (TJ) | Die | Die | Surface Mount | - | 2 N-Channel (Half Bridge) | 60V | 23A (Tj) | 4.4 mOhm @ 20A，5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | ||
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EPC |
6,795
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2 N-CHANNEL 60V 23A DIE
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- | eGaN | -40°C ~ 150°C (TJ) | Die | Die | Surface Mount | - | 2 N-Channel (Half Bridge) | 60V | 23A (Tj) | 4.4 mOhm @ 20A，5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | ||
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EPC |
2,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2NCH 100V 23A DIE
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Tape & Reel (TR) | eGaN | -40°C ~ 150°C (TJ) | Die | Die | Surface Mount | - | 2 N-Channel (Half Bridge) | 100V | 23A | 6.3 mOhm @ 20A，5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | ||
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EPC |
2,457
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2NCH 100V 23A DIE
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Cut Tape (CT) | eGaN | -40°C ~ 150°C (TJ) | Die | Die | Surface Mount | - | 2 N-Channel (Half Bridge) | 100V | 23A | 6.3 mOhm @ 20A，5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | ||
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EPC |
2,457
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2NCH 100V 23A DIE
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- | eGaN | -40°C ~ 150°C (TJ) | Die | Die | Surface Mount | - | 2 N-Channel (Half Bridge) | 100V | 23A | 6.3 mOhm @ 20A，5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | ||
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EPC |
25,000
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3 days |
-
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MOQ: 1 MPQ: 1
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TRANS GAN 2N-CH 120V BUMPED DIE
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Tape & Reel (TR) | eGaN | -40°C ~ 150°C (TJ) | Die | Die | Surface Mount | - | 2 N-Channel (Dual) Common Source | 120V | 3.4A | 60 mOhm @ 4A，5V | 2.5V @ 700μA | 0.8nC @ 5V | 80pF @ 60V | ||
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EPC |
26,948
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3 days |
-
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MOQ: 1 MPQ: 1
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TRANS GAN 2N-CH 120V BUMPED DIE
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Cut Tape (CT) | eGaN | -40°C ~ 150°C (TJ) | Die | Die | Surface Mount | - | 2 N-Channel (Dual) Common Source | 120V | 3.4A | 60 mOhm @ 4A，5V | 2.5V @ 700μA | 0.8nC @ 5V | 80pF @ 60V | ||
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EPC |
26,948
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3 days |
-
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MOQ: 1 MPQ: 1
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TRANS GAN 2N-CH 120V BUMPED DIE
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- | eGaN | -40°C ~ 150°C (TJ) | Die | Die | Surface Mount | - | 2 N-Channel (Dual) Common Source | 120V | 3.4A | 60 mOhm @ 4A，5V | 2.5V @ 700μA | 0.8nC @ 5V | 80pF @ 60V | ||
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EPC |
17,500
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 3 N-CH 100V 9BGA
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Tape & Reel (TR) | eGaN | -40°C ~ 150°C (TJ) | 9-VFBGA | 9-BGA (1.35x1.35) | Surface Mount | - | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | 100V | 1.7A，500mA | 320 mOhm @ 2A，5V，3.3 Ohm @ 2A，5V | 2.5V @ 100μA，2.5V @ 20μA | 0.16nC @ 5V，0.044nC @ 5V | 16pF @ 50V，7pF @ 50V | ||
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EPC |
19,431
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 3 N-CH 100V 9BGA
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Cut Tape (CT) | eGaN | -40°C ~ 150°C (TJ) | 9-VFBGA | 9-BGA (1.35x1.35) | Surface Mount | - | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | 100V | 1.7A，500mA | 320 mOhm @ 2A，5V，3.3 Ohm @ 2A，5V | 2.5V @ 100μA，2.5V @ 20μA | 0.16nC @ 5V，0.044nC @ 5V | 16pF @ 50V，7pF @ 50V |
