FETs, MOSFETs - Arrays - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Operating Temperature：

Package / Case：

Supplier Device Package：

Mounting Type：

Power - Max：

FET Type：

Drain to Source Voltage (Vdss)：

Current - Continuous Drain (Id) @ 25°C：

Rds On (Max) @ Id，Vgs：

Vgs(th) (Max) @ Id：

Gate Charge (Qg) (Max) @ Vgs：

Input Capacitance (Ciss) (Max) @ Vds：

Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Operating Temperature	Package / Case	Supplier Device Package	Mounting Type	Power - Max	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Operating Temperature	Package / Case	Supplier Device Package	Mounting Type	Power - Max	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
	SIZ342DT-T1-GE3	Vishay Siliconix	6,000	3 days	-	MOSFET DL N-CH 30V POWERPAIR3X3 MOQ: 1 MPQ: 1	MOSFET DL N-CH 30V POWERPAIR3X3	Tape & Reel (TR)	TrenchFET	-55°C ~ 150°C (TJ)	8-PowerWDFN	8-Power33 (3x3)	Surface Mount	3.6W，4.3W	2 N-Channel (Dual)	30V	15.7A (Ta)，100A (Tc)	11.5 mOhm @ 14A，10V	2.4V @ 250μA	20nC @ 10V	650pF @ 15V
	SIZ342DT-T1-GE3	Vishay Siliconix	8,912	3 days	-	MOSFET DL N-CH 30V POWERPAIR3X3 MOQ: 1 MPQ: 1	MOSFET DL N-CH 30V POWERPAIR3X3	Cut Tape (CT)	TrenchFET	-55°C ~ 150°C (TJ)	8-PowerWDFN	8-Power33 (3x3)	Surface Mount	3.6W，4.3W	2 N-Channel (Dual)	30V	15.7A (Ta)，100A (Tc)	11.5 mOhm @ 14A，10V	2.4V @ 250μA	20nC @ 10V	650pF @ 15V
	SIZ342DT-T1-GE3	Vishay Siliconix	8,912	3 days	-	MOSFET DL N-CH 30V POWERPAIR3X3 MOQ: 1 MPQ: 1	MOSFET DL N-CH 30V POWERPAIR3X3	-	TrenchFET	-55°C ~ 150°C (TJ)	8-PowerWDFN	8-Power33 (3x3)	Surface Mount	3.6W，4.3W	2 N-Channel (Dual)	30V	15.7A (Ta)，100A (Tc)	11.5 mOhm @ 14A，10V	2.4V @ 250μA	20nC @ 10V	650pF @ 15V
	SI7540ADP-T1-GE3	Vishay Siliconix	3,000	3 days	-	MOSFET N/P-CH POWERPAK8 MOQ: 1 MPQ: 1	MOSFET N/P-CH POWERPAK8	Tape & Reel (TR)	TrenchFET	-55°C ~ 150°C	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual	Surface Mount	3.5W	N and P-Channel	20V	12A，9A	28 mOhm @ 12A，10V	1.4V @ 250μA	48nC @ 10V	1310pF @ 10V
	SI7540ADP-T1-GE3	Vishay Siliconix	5,913	3 days	-	MOSFET N/P-CH POWERPAK8 MOQ: 1 MPQ: 1	MOSFET N/P-CH POWERPAK8	Cut Tape (CT)	TrenchFET	-55°C ~ 150°C	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual	Surface Mount	3.5W	N and P-Channel	20V	12A，9A	28 mOhm @ 12A，10V	1.4V @ 250μA	48nC @ 10V	1310pF @ 10V
	SI7540ADP-T1-GE3	Vishay Siliconix	5,913	3 days	-	MOSFET N/P-CH POWERPAK8 MOQ: 1 MPQ: 1	MOSFET N/P-CH POWERPAK8	-	TrenchFET	-55°C ~ 150°C	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual	Surface Mount	3.5W	N and P-Channel	20V	12A，9A	28 mOhm @ 12A，10V	1.4V @ 250μA	48nC @ 10V	1310pF @ 10V
	SI4590DY-T1-GE3	Vishay Siliconix	Inquiry	-	-	MOSFET N/P CHAN 100V SO8 DUAL MOQ: 1 MPQ: 1	MOSFET N/P CHAN 100V SO8 DUAL	Tape & Reel (TR)	TrenchFET	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	2.4W，3.4W	N and P-Channel	100V	3.4A，2.8A	57 mOhm @ 2A，10V	2.5V @ 250μA	11.5nC @ 10V	360pF @ 50V
	SI4590DY-T1-GE3	Vishay Siliconix	755	3 days	-	MOSFET N/P CHAN 100V SO8 DUAL MOQ: 1 MPQ: 1	MOSFET N/P CHAN 100V SO8 DUAL	Cut Tape (CT)	TrenchFET	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	2.4W，3.4W	N and P-Channel	100V	3.4A，2.8A	57 mOhm @ 2A，10V	2.5V @ 250μA	11.5nC @ 10V	360pF @ 50V
	SI4590DY-T1-GE3	Vishay Siliconix	755	3 days	-	MOSFET N/P CHAN 100V SO8 DUAL MOQ: 1 MPQ: 1	MOSFET N/P CHAN 100V SO8 DUAL	-	TrenchFET	-55°C ~ 150°C (TJ)	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	2.4W，3.4W	N and P-Channel	100V	3.4A，2.8A	57 mOhm @ 2A，10V	2.5V @ 250μA	11.5nC @ 10V	360pF @ 50V
	DMP2160UFDB-7	Diodes Incorporated	Inquiry	-	-	MOSFET 2P-CH 20V 3.8A 6UDFN MOQ: 1 MPQ: 1	MOSFET 2P-CH 20V 3.8A 6UDFN	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	DMP2160UFDB-7	Diodes Incorporated	Inquiry	-	-	MOSFET 2P-CH 20V 3.8A 6UDFN MOQ: 1 MPQ: 1	MOSFET 2P-CH 20V 3.8A 6UDFN	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	DMG1016VQ-7	Diodes Incorporated	Inquiry	-	-	MOSFET N/P-CH 20V SOT563 MOQ: 1 MPQ: 1	MOSFET N/P-CH 20V SOT563	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	DMG1016VQ-7	Diodes Incorporated	Inquiry	-	-	MOSFET N/P-CH 20V SOT563 MOQ: 1 MPQ: 1	MOSFET N/P-CH 20V SOT563	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	DMN53D0LDW-13	Diodes Incorporated	Inquiry	-	-	MOSFET 2N-CH 50V 0.36A SOT363 MOQ: 1 MPQ: 1	MOSFET 2N-CH 50V 0.36A SOT363	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	DMN53D0LDW-13	Diodes Incorporated	Inquiry	-	-	MOSFET 2N-CH 50V 0.36A SOT363 MOQ: 1 MPQ: 1	MOSFET 2N-CH 50V 0.36A SOT363	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	DMN33D8LDW-7	Diodes Incorporated	Inquiry	-	-	MOSFET 2N-CH 30V 0.25A MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 0.25A	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	DMN33D8LDW-7	Diodes Incorporated	Inquiry	-	-	MOSFET 2N-CH 30V 0.25A MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 0.25A	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	BSS138DWQ-7	Diodes Incorporated	Inquiry	-	-	MOSFET 2NCH 50V 200MA SOT363 MOQ: 1 MPQ: 1	MOSFET 2NCH 50V 200MA SOT363	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	BSS138DWQ-7	Diodes Incorporated	Inquiry	-	-	MOSFET 2NCH 50V 200MA SOT363 MOQ: 1 MPQ: 1	MOSFET 2NCH 50V 200MA SOT363	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	DMC31D5UDJ-7	Diodes Incorporated	Inquiry	-	-	MOSFET N/P-CH 30V SOT963 MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V SOT963	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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