Package / Case:
Supplier Device Package:
Power - Max:
Current - Continuous Drain (Id) @ 25°C:
Rds On (Max) @ Id,Vgs:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 2,026 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Mounting Type Power - Max FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
FG6943010R
Panasonic Electronic Components
232,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 0.1A SSMINI6
Tape & Reel (TR) - -40°C ~ 85°C (TJ) SOT-563,SOT-666 SSMini6-F3-B Surface Mount - N and P-Channel 30V 100mA - - - -
FG6943010R
Panasonic Electronic Components
237,036
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 0.1A SSMINI6
Cut Tape (CT) - -40°C ~ 85°C (TJ) SOT-563,SOT-666 SSMini6-F3-B Surface Mount - N and P-Channel 30V 100mA - - - -
FG6943010R
Panasonic Electronic Components
237,036
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 0.1A SSMINI6
- - -40°C ~ 85°C (TJ) SOT-563,SOT-666 SSMini6-F3-B Surface Mount - N and P-Channel 30V 100mA - - - -
FDC6401N
ON Semiconductor
24,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 3A SSOT-6
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 SuperSOT?-6 Surface Mount 700mW 2 N-Channel (Dual) 20V 3A 70 mOhm @ 3A,4.5V 1.5V @ 250μA 4.6nC @ 4.5V 324pF @ 10V
FDC6401N
ON Semiconductor
24,030
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 3A SSOT-6
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 SuperSOT?-6 Surface Mount 700mW 2 N-Channel (Dual) 20V 3A 70 mOhm @ 3A,4.5V 1.5V @ 250μA 4.6nC @ 4.5V 324pF @ 10V
FDC6401N
ON Semiconductor
24,030
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 3A SSOT-6
- PowerTrench -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 SuperSOT?-6 Surface Mount 700mW 2 N-Channel (Dual) 20V 3A 70 mOhm @ 3A,4.5V 1.5V @ 250μA 4.6nC @ 4.5V 324pF @ 10V
IRF7303TRPBF
Infineon Technologies
8,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 4.9A 8-SOIC
Tape & Reel (TR) HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount 2W 2 N-Channel (Dual) 30V 4.9A 50 mOhm @ 2.4A,10V 1V @ 250μA 25nC @ 10V 520pF @ 25V
IRF7303TRPBF
Infineon Technologies
10,129
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 4.9A 8-SOIC
Cut Tape (CT) HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount 2W 2 N-Channel (Dual) 30V 4.9A 50 mOhm @ 2.4A,10V 1V @ 250μA 25nC @ 10V 520pF @ 25V
IRF7303TRPBF
Infineon Technologies
10,129
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 4.9A 8-SOIC
- HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount 2W 2 N-Channel (Dual) 30V 4.9A 50 mOhm @ 2.4A,10V 1V @ 250μA 25nC @ 10V 520pF @ 25V
IRF7343TRPBF
Infineon Technologies
12,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 55V 8-SOIC
Tape & Reel (TR) HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount 2W N and P-Channel 55V 4.7A,3.4A 50 mOhm @ 4.7A,10V 1V @ 250μA 36nC @ 10V 740pF @ 25V
IRF7343TRPBF
Infineon Technologies
14,329
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 55V 8-SOIC
Cut Tape (CT) HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount 2W N and P-Channel 55V 4.7A,3.4A 50 mOhm @ 4.7A,10V 1V @ 250μA 36nC @ 10V 740pF @ 25V
IRF7343TRPBF
Infineon Technologies
14,329
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 55V 8-SOIC
- HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount 2W N and P-Channel 55V 4.7A,3.4A 50 mOhm @ 4.7A,10V 1V @ 250μA 36nC @ 10V 740pF @ 25V
DMP4050SSD-13
Diodes Incorporated
7,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 40V 4A 8SO
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOP Surface Mount 1.8W 2 P-Channel (Dual) 40V 4A 50 mOhm @ 6A,10V 3V @ 250μA 13.9nC @ 10V 674pF @ 20V
DMP4050SSD-13
Diodes Incorporated
7,991
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 40V 4A 8SO
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount 1.8W 2 P-Channel (Dual) 40V 4A 50 mOhm @ 6A,10V 3V @ 250μA 13.9nC @ 10V 674pF @ 20V
DMP4050SSD-13
Diodes Incorporated
7,991
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 40V 4A 8SO
- - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount 1.8W 2 P-Channel (Dual) 40V 4A 50 mOhm @ 6A,10V 3V @ 250μA 13.9nC @ 10V 674pF @ 20V
SI4925DDY-T1-GE3
Vishay Siliconix
22,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 8A 8-SOIC
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount 5W 2 P-Channel (Dual) 30V 8A 29 mOhm @ 7.3A,10V 3V @ 250μA 50nC @ 10V 1350pF @ 15V
SI4925DDY-T1-GE3
Vishay Siliconix
25,556
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 8A 8-SOIC
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount 5W 2 P-Channel (Dual) 30V 8A 29 mOhm @ 7.3A,10V 3V @ 250μA 50nC @ 10V 1350pF @ 15V
SI4925DDY-T1-GE3
Vishay Siliconix
25,556
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 8A 8-SOIC
- TrenchFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount 5W 2 P-Channel (Dual) 30V 8A 29 mOhm @ 7.3A,10V 3V @ 250μA 50nC @ 10V 1350pF @ 15V
SI4286DY-T1-GE3
Vishay Siliconix
7,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 40V 7A 8SO
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount 2.9W 2 N-Channel (Dual) 40V 7A 32.5 mOhm @ 8A,10V 2.5V @ 250μA 10.5nC @ 10V 375pF @ 20V
SI4286DY-T1-GE3
Vishay Siliconix
9,924
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 40V 7A 8SO
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount 2.9W 2 N-Channel (Dual) 40V 7A 32.5 mOhm @ 8A,10V 2.5V @ 250μA 10.5nC @ 10V 375pF @ 20V