Current - Continuous Drain (Id) @ 25°C:
Rds On (Max) @ Id,Vgs:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 768 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Mounting Type Power - Max FET Type FET Feature Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
DMG1026UV-7
Diodes Incorporated
54,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 0.41A SOT-563
Tape & Reel (TR) - -55°C ~ 150°C (TJ) SOT-563,SOT-666 SOT-563 Surface Mount 580mW 2 N-Channel (Dual) Logic Level Gate 410mA 1.8 Ohm @ 500mA,10V 1.8V @ 250μA 0.45nC @ 10V 32pF @ 25V
DMG1026UV-7
Diodes Incorporated
56,032
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 0.41A SOT-563
Cut Tape (CT) - -55°C ~ 150°C (TJ) SOT-563,SOT-666 SOT-563 Surface Mount 580mW 2 N-Channel (Dual) Logic Level Gate 410mA 1.8 Ohm @ 500mA,10V 1.8V @ 250μA 0.45nC @ 10V 32pF @ 25V
DMG1026UV-7
Diodes Incorporated
56,032
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 0.41A SOT-563
- - -55°C ~ 150°C (TJ) SOT-563,SOT-666 SOT-563 Surface Mount 580mW 2 N-Channel (Dual) Logic Level Gate 410mA 1.8 Ohm @ 500mA,10V 1.8V @ 250μA 0.45nC @ 10V 32pF @ 25V
SI1026X-T1-GE3
Vishay Siliconix
108,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 0.305A SC89-6
Tape & Reel (TR) - -55°C ~ 150°C (TJ) SOT-563,SOT-666 SC-89-6 Surface Mount 250mW 2 N-Channel (Dual) Logic Level Gate 305mA 1.4 Ohm @ 500mA,10V 2.5V @ 250μA 0.6nC @ 4.5V 30pF @ 25V
SI1026X-T1-GE3
Vishay Siliconix
110,511
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 0.305A SC89-6
Cut Tape (CT) - -55°C ~ 150°C (TJ) SOT-563,SOT-666 SC-89-6 Surface Mount 250mW 2 N-Channel (Dual) Logic Level Gate 305mA 1.4 Ohm @ 500mA,10V 2.5V @ 250μA 0.6nC @ 4.5V 30pF @ 25V
SI1026X-T1-GE3
Vishay Siliconix
110,511
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 0.305A SC89-6
- - -55°C ~ 150°C (TJ) SOT-563,SOT-666 SC-89-6 Surface Mount 250mW 2 N-Channel (Dual) Logic Level Gate 305mA 1.4 Ohm @ 500mA,10V 2.5V @ 250μA 0.6nC @ 4.5V 30pF @ 25V
SI1025X-T1-GE3
Vishay Siliconix
15,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 0.19A SC-89
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) SOT-563,SOT-666 SC-89-6 Surface Mount 250mW 2 P-Channel (Dual) Logic Level Gate 190mA 4 Ohm @ 500mA,10V 3V @ 250μA 1.7nC @ 15V 23pF @ 25V
SI1025X-T1-GE3
Vishay Siliconix
17,865
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 0.19A SC-89
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) SOT-563,SOT-666 SC-89-6 Surface Mount 250mW 2 P-Channel (Dual) Logic Level Gate 190mA 4 Ohm @ 500mA,10V 3V @ 250μA 1.7nC @ 15V 23pF @ 25V
SI1025X-T1-GE3
Vishay Siliconix
17,865
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 0.19A SC-89
- TrenchFET -55°C ~ 150°C (TJ) SOT-563,SOT-666 SC-89-6 Surface Mount 250mW 2 P-Channel (Dual) Logic Level Gate 190mA 4 Ohm @ 500mA,10V 3V @ 250μA 1.7nC @ 15V 23pF @ 25V
DMN6040SSD-13
Diodes Incorporated
30,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 5A 8SO
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount 1.3W 2 N-Channel (Dual) Logic Level Gate 5A 40 mOhm @ 4.5A,10V 3V @ 250μA 22.4nC @ 10V 1287pF @ 25V
DMN6040SSD-13
Diodes Incorporated
30,308
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 5A 8SO
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount 1.3W 2 N-Channel (Dual) Logic Level Gate 5A 40 mOhm @ 4.5A,10V 3V @ 250μA 22.4nC @ 10V 1287pF @ 25V
DMN6040SSD-13
Diodes Incorporated
30,308
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 5A 8SO
- - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount 1.3W 2 N-Channel (Dual) Logic Level Gate 5A 40 mOhm @ 4.5A,10V 3V @ 250μA 22.4nC @ 10V 1287pF @ 25V
FDS9958
ON Semiconductor
5,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 2.9A 8-SO
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount 900mW 2 P-Channel (Dual) Logic Level Gate 2.9A 105 mOhm @ 2.9A,10V 3V @ 250μA 23nC @ 10V 1020pF @ 30V
FDS9958
ON Semiconductor
6,326
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 2.9A 8-SO
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount 900mW 2 P-Channel (Dual) Logic Level Gate 2.9A 105 mOhm @ 2.9A,10V 3V @ 250μA 23nC @ 10V 1020pF @ 30V
FDS9958
ON Semiconductor
6,326
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 2.9A 8-SO
- PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount 900mW 2 P-Channel (Dual) Logic Level Gate 2.9A 105 mOhm @ 2.9A,10V 3V @ 250μA 23nC @ 10V 1020pF @ 30V
SI4946BEY-T1-E3
Vishay Siliconix
12,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 6.5A 8-SOIC
Tape & Reel (TR) TrenchFET -55°C ~ 175°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount 3.7W 2 N-Channel (Dual) Logic Level Gate 6.5A 41 mOhm @ 5.3A,10V 3V @ 250μA 25nC @ 10V 840pF @ 30V
SI4946BEY-T1-E3
Vishay Siliconix
14,342
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 6.5A 8-SOIC
Cut Tape (CT) TrenchFET -55°C ~ 175°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount 3.7W 2 N-Channel (Dual) Logic Level Gate 6.5A 41 mOhm @ 5.3A,10V 3V @ 250μA 25nC @ 10V 840pF @ 30V
SI4946BEY-T1-E3
Vishay Siliconix
14,342
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 6.5A 8-SOIC
- TrenchFET -55°C ~ 175°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount 3.7W 2 N-Channel (Dual) Logic Level Gate 6.5A 41 mOhm @ 5.3A,10V 3V @ 250μA 25nC @ 10V 840pF @ 30V
SI4946BEY-T1-GE3
Vishay Siliconix
5,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 6.5A 8-SOIC
Tape & Reel (TR) TrenchFET -55°C ~ 175°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount 3.7W 2 N-Channel (Dual) Logic Level Gate 6.5A 41 mOhm @ 5.3A,10V 3V @ 250μA 25nC @ 10V 840pF @ 30V
SI4946BEY-T1-GE3
Vishay Siliconix
6,594
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 6.5A 8-SOIC
Cut Tape (CT) TrenchFET -55°C ~ 175°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO Surface Mount 3.7W 2 N-Channel (Dual) Logic Level Gate 6.5A 41 mOhm @ 5.3A,10V 3V @ 250μA 25nC @ 10V 840pF @ 30V