- Manufacturer:
-
- Series:
-
- Operating Temperature:
-
- Package / Case:
-
- Supplier Device Package:
-
- Mounting Type:
-
- Power - Max:
-
- FET Type:
-
- FET Feature:
-
- Current - Continuous Drain (Id) @ 25°C:
-
- Rds On (Max) @ Id,Vgs:
-
- Vgs(th) (Max) @ Id:
-
- Gate Charge (Qg) (Max) @ Vgs:
-
- Input Capacitance (Ciss) (Max) @ Vds:
-
- Selected conditions:
Discover 768 products
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Power - Max | FET Type | FET Feature | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id,Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Power - Max | FET Type | FET Feature | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id,Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | ||
Diodes Incorporated |
54,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 60V 0.41A SOT-563
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | SOT-563,SOT-666 | SOT-563 | Surface Mount | 580mW | 2 N-Channel (Dual) | Logic Level Gate | 410mA | 1.8 Ohm @ 500mA,10V | 1.8V @ 250μA | 0.45nC @ 10V | 32pF @ 25V | ||||
Diodes Incorporated |
56,032
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 60V 0.41A SOT-563
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | SOT-563,SOT-666 | SOT-563 | Surface Mount | 580mW | 2 N-Channel (Dual) | Logic Level Gate | 410mA | 1.8 Ohm @ 500mA,10V | 1.8V @ 250μA | 0.45nC @ 10V | 32pF @ 25V | ||||
Diodes Incorporated |
56,032
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 60V 0.41A SOT-563
|
- | - | -55°C ~ 150°C (TJ) | SOT-563,SOT-666 | SOT-563 | Surface Mount | 580mW | 2 N-Channel (Dual) | Logic Level Gate | 410mA | 1.8 Ohm @ 500mA,10V | 1.8V @ 250μA | 0.45nC @ 10V | 32pF @ 25V | ||||
Vishay Siliconix |
108,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 60V 0.305A SC89-6
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | SOT-563,SOT-666 | SC-89-6 | Surface Mount | 250mW | 2 N-Channel (Dual) | Logic Level Gate | 305mA | 1.4 Ohm @ 500mA,10V | 2.5V @ 250μA | 0.6nC @ 4.5V | 30pF @ 25V | ||||
Vishay Siliconix |
110,511
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 60V 0.305A SC89-6
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | SOT-563,SOT-666 | SC-89-6 | Surface Mount | 250mW | 2 N-Channel (Dual) | Logic Level Gate | 305mA | 1.4 Ohm @ 500mA,10V | 2.5V @ 250μA | 0.6nC @ 4.5V | 30pF @ 25V | ||||
Vishay Siliconix |
110,511
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 60V 0.305A SC89-6
|
- | - | -55°C ~ 150°C (TJ) | SOT-563,SOT-666 | SC-89-6 | Surface Mount | 250mW | 2 N-Channel (Dual) | Logic Level Gate | 305mA | 1.4 Ohm @ 500mA,10V | 2.5V @ 250μA | 0.6nC @ 4.5V | 30pF @ 25V | ||||
Vishay Siliconix |
15,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 60V 0.19A SC-89
|
Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | SOT-563,SOT-666 | SC-89-6 | Surface Mount | 250mW | 2 P-Channel (Dual) | Logic Level Gate | 190mA | 4 Ohm @ 500mA,10V | 3V @ 250μA | 1.7nC @ 15V | 23pF @ 25V | ||||
Vishay Siliconix |
17,865
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 60V 0.19A SC-89
|
Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | SOT-563,SOT-666 | SC-89-6 | Surface Mount | 250mW | 2 P-Channel (Dual) | Logic Level Gate | 190mA | 4 Ohm @ 500mA,10V | 3V @ 250μA | 1.7nC @ 15V | 23pF @ 25V | ||||
Vishay Siliconix |
17,865
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 60V 0.19A SC-89
|
- | TrenchFET | -55°C ~ 150°C (TJ) | SOT-563,SOT-666 | SC-89-6 | Surface Mount | 250mW | 2 P-Channel (Dual) | Logic Level Gate | 190mA | 4 Ohm @ 500mA,10V | 3V @ 250μA | 1.7nC @ 15V | 23pF @ 25V | ||||
Diodes Incorporated |
30,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 60V 5A 8SO
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | 1.3W | 2 N-Channel (Dual) | Logic Level Gate | 5A | 40 mOhm @ 4.5A,10V | 3V @ 250μA | 22.4nC @ 10V | 1287pF @ 25V | ||||
Diodes Incorporated |
30,308
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 60V 5A 8SO
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | 1.3W | 2 N-Channel (Dual) | Logic Level Gate | 5A | 40 mOhm @ 4.5A,10V | 3V @ 250μA | 22.4nC @ 10V | 1287pF @ 25V | ||||
Diodes Incorporated |
30,308
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 60V 5A 8SO
|
- | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | 1.3W | 2 N-Channel (Dual) | Logic Level Gate | 5A | 40 mOhm @ 4.5A,10V | 3V @ 250μA | 22.4nC @ 10V | 1287pF @ 25V | ||||
ON Semiconductor |
5,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 60V 2.9A 8-SO
|
Tape & Reel (TR) | PowerTrench | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | 900mW | 2 P-Channel (Dual) | Logic Level Gate | 2.9A | 105 mOhm @ 2.9A,10V | 3V @ 250μA | 23nC @ 10V | 1020pF @ 30V | ||||
ON Semiconductor |
6,326
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 60V 2.9A 8-SO
|
Cut Tape (CT) | PowerTrench | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | 900mW | 2 P-Channel (Dual) | Logic Level Gate | 2.9A | 105 mOhm @ 2.9A,10V | 3V @ 250μA | 23nC @ 10V | 1020pF @ 30V | ||||
ON Semiconductor |
6,326
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 60V 2.9A 8-SO
|
- | PowerTrench | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | 900mW | 2 P-Channel (Dual) | Logic Level Gate | 2.9A | 105 mOhm @ 2.9A,10V | 3V @ 250μA | 23nC @ 10V | 1020pF @ 30V | ||||
Vishay Siliconix |
12,500
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 60V 6.5A 8-SOIC
|
Tape & Reel (TR) | TrenchFET | -55°C ~ 175°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | 3.7W | 2 N-Channel (Dual) | Logic Level Gate | 6.5A | 41 mOhm @ 5.3A,10V | 3V @ 250μA | 25nC @ 10V | 840pF @ 30V | ||||
Vishay Siliconix |
14,342
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 60V 6.5A 8-SOIC
|
Cut Tape (CT) | TrenchFET | -55°C ~ 175°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | 3.7W | 2 N-Channel (Dual) | Logic Level Gate | 6.5A | 41 mOhm @ 5.3A,10V | 3V @ 250μA | 25nC @ 10V | 840pF @ 30V | ||||
Vishay Siliconix |
14,342
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 60V 6.5A 8-SOIC
|
- | TrenchFET | -55°C ~ 175°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | 3.7W | 2 N-Channel (Dual) | Logic Level Gate | 6.5A | 41 mOhm @ 5.3A,10V | 3V @ 250μA | 25nC @ 10V | 840pF @ 30V | ||||
Vishay Siliconix |
5,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 60V 6.5A 8-SOIC
|
Tape & Reel (TR) | TrenchFET | -55°C ~ 175°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | 3.7W | 2 N-Channel (Dual) | Logic Level Gate | 6.5A | 41 mOhm @ 5.3A,10V | 3V @ 250μA | 25nC @ 10V | 840pF @ 30V | ||||
Vishay Siliconix |
6,594
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 60V 6.5A 8-SOIC
|
Cut Tape (CT) | TrenchFET | -55°C ~ 175°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | 3.7W | 2 N-Channel (Dual) | Logic Level Gate | 6.5A | 41 mOhm @ 5.3A,10V | 3V @ 250μA | 25nC @ 10V | 840pF @ 30V |