Supplier Device Package:
Power - Max:
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 2 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Series Package / Case Supplier Device Package Power - Max FET Type Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
FDS6993
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V/12V 8SOIC
PowerTrench 8-SOIC (0.154",3.90mm Width) 8-SO 900mW 2 P-Channel (Dual) 4.3A,6.8A 55 mOhm @ 4.3A,10V 3V @ 250μA 7.7nC @ 5V 530pF @ 15V
FDC6432SH
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V/12V SSOT-6
PowerTrench,SyncFET SOT-23-6 Thin,TSOT-23-6 SuperSOT?-6 700mW N and P-Channel 2.4A,2.5A 90 mOhm @ 2.4A,10V 3V @ 1mA 3.5nC @ 5V 270pF @ 15V