Discover 192 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Type FET Feature Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
FDC6301N
ON Semiconductor
9,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 25V 0.22A SSOT6
Tape & Reel (TR) - -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 SuperSOT?-6 700mW 2 N-Channel (Dual) Logic Level Gate 220mA 4 Ohm @ 400mA,4.5V 1.5V @ 250μA 0.7nC @ 4.5V 9.5pF @ 10V
FDC6301N
ON Semiconductor
14,182
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 25V 0.22A SSOT6
Cut Tape (CT) - -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 SuperSOT?-6 700mW 2 N-Channel (Dual) Logic Level Gate 220mA 4 Ohm @ 400mA,4.5V 1.5V @ 250μA 0.7nC @ 4.5V 9.5pF @ 10V
FDC6301N
ON Semiconductor
14,182
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 25V 0.22A SSOT6
- - -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 SuperSOT?-6 700mW 2 N-Channel (Dual) Logic Level Gate 220mA 4 Ohm @ 400mA,4.5V 1.5V @ 250μA 0.7nC @ 4.5V 9.5pF @ 10V
FDG6322C
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 25V SC70-6
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 6-TSSOP,SC-88,SOT-363 SC-70-6 300mW N and P-Channel Logic Level Gate 220mA,410mA 4 Ohm @ 220mA,4.5V 1.5V @ 250μA 0.4nC @ 4.5V 9.5pF @ 10V
FDG6322C
ON Semiconductor
2,470
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 25V SC70-6
Cut Tape (CT) - -55°C ~ 150°C (TJ) 6-TSSOP,SC-88,SOT-363 SC-70-6 300mW N and P-Channel Logic Level Gate 220mA,410mA 4 Ohm @ 220mA,4.5V 1.5V @ 250μA 0.4nC @ 4.5V 9.5pF @ 10V
FDG6322C
ON Semiconductor
2,470
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 25V SC70-6
- - -55°C ~ 150°C (TJ) 6-TSSOP,SC-88,SOT-363 SC-70-6 300mW N and P-Channel Logic Level Gate 220mA,410mA 4 Ohm @ 220mA,4.5V 1.5V @ 250μA 0.4nC @ 4.5V 9.5pF @ 10V
CSD86330Q3D
Texas Instruments
35,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 25V 20A 8SON
Tape & Reel (TR) NexFET -55°C ~ 150°C (TJ) 8-PowerLDFN 8-LSON (5x6) 6W 2 N-Channel (Half Bridge) Logic Level Gate 20A 9.6 mOhm @ 14A,8V 2.1V @ 250μA 6.2nC @ 4.5V 920pF @ 12.5V
CSD86330Q3D
Texas Instruments
36,721
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 25V 20A 8SON
Cut Tape (CT) NexFET -55°C ~ 150°C (TJ) 8-PowerLDFN 8-LSON (5x6) 6W 2 N-Channel (Half Bridge) Logic Level Gate 20A 9.6 mOhm @ 14A,8V 2.1V @ 250μA 6.2nC @ 4.5V 920pF @ 12.5V
CSD86330Q3D
Texas Instruments
36,721
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 25V 20A 8SON
- NexFET -55°C ~ 150°C (TJ) 8-PowerLDFN 8-LSON (5x6) 6W 2 N-Channel (Half Bridge) Logic Level Gate 20A 9.6 mOhm @ 14A,8V 2.1V @ 250μA 6.2nC @ 4.5V 920pF @ 12.5V
FDPC8011S
ON Semiconductor
6,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 25V 13A/27A 8PQFN
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 8-PowerWDFN Powerclip-33 800mW,900mW 2 N-Channel (Dual) Asymmetrical Logic Level Gate 13A,27A 6 mOhm @ 13A,10V 2.2V @ 250μA 19nC @ 10V 1240pF @ 13V
FDPC8011S
ON Semiconductor
9,533
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 25V 13A/27A 8PQFN
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) 8-PowerWDFN Powerclip-33 800mW,900mW 2 N-Channel (Dual) Asymmetrical Logic Level Gate 13A,27A 6 mOhm @ 13A,10V 2.2V @ 250μA 19nC @ 10V 1240pF @ 13V
FDPC8011S
ON Semiconductor
9,533
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 25V 13A/27A 8PQFN
- PowerTrench -55°C ~ 150°C (TJ) 8-PowerWDFN Powerclip-33 800mW,900mW 2 N-Channel (Dual) Asymmetrical Logic Level Gate 13A,27A 6 mOhm @ 13A,10V 2.2V @ 250μA 19nC @ 10V 1240pF @ 13V
FDG6320C
ON Semiconductor
24,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 25V SC70-6
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 6-TSSOP,SC-88,SOT-363 SC-70-6 300mW N and P-Channel Logic Level Gate 220mA,140mA 4 Ohm @ 220mA,4.5V 1.5V @ 250μA 0.4nC @ 4.5V 9.5pF @ 10V
FDG6320C
ON Semiconductor
24,478
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 25V SC70-6
Cut Tape (CT) - -55°C ~ 150°C (TJ) 6-TSSOP,SC-88,SOT-363 SC-70-6 300mW N and P-Channel Logic Level Gate 220mA,140mA 4 Ohm @ 220mA,4.5V 1.5V @ 250μA 0.4nC @ 4.5V 9.5pF @ 10V
FDG6320C
ON Semiconductor
24,478
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 25V SC70-6
- - -55°C ~ 150°C (TJ) 6-TSSOP,SC-88,SOT-363 SC-70-6 300mW N and P-Channel Logic Level Gate 220mA,140mA 4 Ohm @ 220mA,4.5V 1.5V @ 250μA 0.4nC @ 4.5V 9.5pF @ 10V
FDC6320C
ON Semiconductor
6,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 25V SSOT6
Tape & Reel (TR) - -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 6-SSOT 700mW N and P-Channel Logic Level Gate 220mA,120mA 4 Ohm @ 400mA,4.5V 1.5V @ 250μA 0.4nC @ 4.5V 9.5pF @ 10V
FDC6320C
ON Semiconductor
9,068
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 25V SSOT6
Cut Tape (CT) - -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 6-SSOT 700mW N and P-Channel Logic Level Gate 220mA,120mA 4 Ohm @ 400mA,4.5V 1.5V @ 250μA 0.4nC @ 4.5V 9.5pF @ 10V
FDC6320C
ON Semiconductor
9,068
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 25V SSOT6
- - -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 6-SSOT 700mW N and P-Channel Logic Level Gate 220mA,120mA 4 Ohm @ 400mA,4.5V 1.5V @ 250μA 0.4nC @ 4.5V 9.5pF @ 10V
FDMB3900AN
ON Semiconductor
6,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 25V 7A 8-MLP
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 8-PowerWDFN 8-MLP,MicroFET (3x1.9) 800mW 2 N-Channel (Dual) Logic Level Gate 7A 23 mOhm @ 7A,10V 3V @ 250μA 17nC @ 10V 890pF @ 13V
FDMB3900AN
ON Semiconductor
8,986
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 25V 7A 8-MLP
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) 8-PowerWDFN 8-MLP,MicroFET (3x1.9) 800mW 2 N-Channel (Dual) Logic Level Gate 7A 23 mOhm @ 7A,10V 3V @ 250μA 17nC @ 10V 890pF @ 13V