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Discover 82 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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EPC |
5,500
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3 days |
-
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MOQ: 1 MPQ: 1
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TRANS GAN SYM HALF BRDG 80V
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Tape & Reel (TR) | eGaN | - | Die | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 23A | 5.5 mOhm @ 20A，5V | 2.5V @ 7mA | 6.5nC @ 5V | 7600pF @ 40V | ||
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EPC |
5,884
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3 days |
-
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MOQ: 1 MPQ: 1
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TRANS GAN SYM HALF BRDG 80V
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Cut Tape (CT) | eGaN | - | Die | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 23A | 5.5 mOhm @ 20A，5V | 2.5V @ 7mA | 6.5nC @ 5V | 7600pF @ 40V | ||
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EPC |
5,884
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3 days |
-
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MOQ: 1 MPQ: 1
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TRANS GAN SYM HALF BRDG 80V
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- | eGaN | - | Die | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 23A | 5.5 mOhm @ 20A，5V | 2.5V @ 7mA | 6.5nC @ 5V | 7600pF @ 40V | ||
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Infineon Technologies |
8,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 80V 3.6A 8-SOIC
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 3.6A | 73 mOhm @ 2.2A，10V | 4V @ 250μA | 23nC @ 10V | 660pF @ 25V | ||
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Infineon Technologies |
8,048
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 80V 3.6A 8-SOIC
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Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 3.6A | 73 mOhm @ 2.2A，10V | 4V @ 250μA | 23nC @ 10V | 660pF @ 25V | ||
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Infineon Technologies |
8,048
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 80V 3.6A 8-SOIC
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- | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 3.6A | 73 mOhm @ 2.2A，10V | 4V @ 250μA | 23nC @ 10V | 660pF @ 25V | ||
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ON Semiconductor |
7,500
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 80V 4.7A 8-SO
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Tape & Reel (TR) | PowerTrench | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 900mW | 2 N-Channel (Dual) | Logic Level Gate | 4.7A | 44 mOhm @ 4.7A，10V | 4V @ 250μA | 35nC @ 10V | 1180pF @ 40V | ||
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ON Semiconductor |
9,284
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 80V 4.7A 8-SO
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Cut Tape (CT) | PowerTrench | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 900mW | 2 N-Channel (Dual) | Logic Level Gate | 4.7A | 44 mOhm @ 4.7A，10V | 4V @ 250μA | 35nC @ 10V | 1180pF @ 40V | ||
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ON Semiconductor |
9,284
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 80V 4.7A 8-SO
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- | PowerTrench | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 900mW | 2 N-Channel (Dual) | Logic Level Gate | 4.7A | 44 mOhm @ 4.7A，10V | 4V @ 250μA | 35nC @ 10V | 1180pF @ 40V | ||
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ON Semiconductor |
2,500
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 80V 2.1A 8SOIC
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Tape & Reel (TR) | PowerTrench | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.6W | 2 P-Channel (Dual) | Logic Level Gate | 2.1A | 183 mOhm @ 2.1A，10V | 3V @ 250μA | 19nC @ 10V | 879pF @ 40V | ||
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ON Semiconductor |
3,978
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 80V 2.1A 8SOIC
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Cut Tape (CT) | PowerTrench | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.6W | 2 P-Channel (Dual) | Logic Level Gate | 2.1A | 183 mOhm @ 2.1A，10V | 3V @ 250μA | 19nC @ 10V | 879pF @ 40V | ||
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ON Semiconductor |
3,978
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 80V 2.1A 8SOIC
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- | PowerTrench | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.6W | 2 P-Channel (Dual) | Logic Level Gate | 2.1A | 183 mOhm @ 2.1A，10V | 3V @ 250μA | 19nC @ 10V | 879pF @ 40V | ||
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EPC |
9,500
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3 days |
-
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MOQ: 1 MPQ: 1
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TRANS GAN SYMMETRICAL HALF BRIDG
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Tape & Reel (TR) | eGaN | -40°C ~ 150°C (TJ) | Die | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 28A | 5.5 mOhm @ 20A，5V | 2.5V @ 7mA | 6.5nC @ 5V | 760pF @ 40V | ||
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EPC |
9,995
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3 days |
-
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MOQ: 1 MPQ: 1
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TRANS GAN SYMMETRICAL HALF BRIDG
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Cut Tape (CT) | eGaN | -40°C ~ 150°C (TJ) | Die | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 28A | 5.5 mOhm @ 20A，5V | 2.5V @ 7mA | 6.5nC @ 5V | 760pF @ 40V | ||
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EPC |
9,995
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3 days |
-
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MOQ: 1 MPQ: 1
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TRANS GAN SYMMETRICAL HALF BRIDG
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- | eGaN | -40°C ~ 150°C (TJ) | Die | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 28A | 5.5 mOhm @ 20A，5V | 2.5V @ 7mA | 6.5nC @ 5V | 760pF @ 40V | ||
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EPC |
10,000
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3 days |
-
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MOQ: 1 MPQ: 1
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TRANS GAN ASYMMETRICAL HALF BRID
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Tape & Reel (TR) | eGaN | -40°C ~ 150°C (TJ) | Die | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 9.5A，38A | 14.5 mOhm @ 20A，5V，3.4 mOhm @ 20A，5V | 2.5V @ 2.5mA，2.5V @ 10mA | 2.5nC @ 5V，10nC @ 5V | 300pF @ 40V，1100pF @ 40V | ||
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EPC |
10,000
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3 days |
-
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MOQ: 1 MPQ: 1
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TRANS GAN ASYMMETRICAL HALF BRID
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Cut Tape (CT) | eGaN | -40°C ~ 150°C (TJ) | Die | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 9.5A，38A | 14.5 mOhm @ 20A，5V，3.4 mOhm @ 20A，5V | 2.5V @ 2.5mA，2.5V @ 10mA | 2.5nC @ 5V，10nC @ 5V | 300pF @ 40V，1100pF @ 40V | ||
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EPC |
10,000
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3 days |
-
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MOQ: 1 MPQ: 1
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TRANS GAN ASYMMETRICAL HALF BRID
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- | eGaN | -40°C ~ 150°C (TJ) | Die | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 9.5A，38A | 14.5 mOhm @ 20A，5V，3.4 mOhm @ 20A，5V | 2.5V @ 2.5mA，2.5V @ 10mA | 2.5nC @ 5V，10nC @ 5V | 300pF @ 40V，1100pF @ 40V | ||
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EPC |
5,500
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2NCH 80V 9.5A DIE
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Tape & Reel (TR) | eGaN | -40°C ~ 150°C (TJ) | Die | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 9.5A | 14.5 mOhm @ 20A，5V | 2.5V @ 2.5mA | 2.5nC @ 5V | 300pF @ 40V | ||
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EPC |
5,742
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2NCH 80V 9.5A DIE
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Cut Tape (CT) | eGaN | -40°C ~ 150°C (TJ) | Die | Die | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 9.5A | 14.5 mOhm @ 20A，5V | 2.5V @ 2.5mA | 2.5nC @ 5V | 300pF @ 40V |
