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Discover 60 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Power - Max | FET Type | FET Feature | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Power - Max | FET Type | FET Feature | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Infineon Technologies |
12,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 55V 8-SOIC
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2W | N and P-Channel | Standard | 4.7A，3.4A | 50 mOhm @ 4.7A，10V | 1V @ 250μA | 36nC @ 10V | 740pF @ 25V | ||
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Infineon Technologies |
14,329
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 55V 8-SOIC
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Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2W | N and P-Channel | Standard | 4.7A，3.4A | 50 mOhm @ 4.7A，10V | 1V @ 250μA | 36nC @ 10V | 740pF @ 25V | ||
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Infineon Technologies |
14,329
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 55V 8-SOIC
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- | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2W | N and P-Channel | Standard | 4.7A，3.4A | 50 mOhm @ 4.7A，10V | 1V @ 250μA | 36nC @ 10V | 740pF @ 25V | ||
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Infineon Technologies |
4,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 55V 4.7A 8-SOIC
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2W | 2 N-Channel (Dual) | Logic Level Gate | 4.7A | 50 mOhm @ 4.7A，10V | 1V @ 250μA | 36nC @ 10V | 740pF @ 25V | ||
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Infineon Technologies |
6,255
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 55V 4.7A 8-SOIC
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Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2W | 2 N-Channel (Dual) | Logic Level Gate | 4.7A | 50 mOhm @ 4.7A，10V | 1V @ 250μA | 36nC @ 10V | 740pF @ 25V | ||
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Infineon Technologies |
6,255
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 55V 4.7A 8-SOIC
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- | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2W | 2 N-Channel (Dual) | Logic Level Gate | 4.7A | 50 mOhm @ 4.7A，10V | 1V @ 250μA | 36nC @ 10V | 740pF @ 25V | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 55V 3.4A 8-SOIC
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2W | 2 P-Channel (Dual) | Logic Level Gate | 3.4A | 105 mOhm @ 3.4A，10V | 1V @ 250μA | 38nC @ 10V | 690pF @ 25V | ||
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Infineon Technologies |
5,044
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 55V 3.4A 8-SOIC
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Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2W | 2 P-Channel (Dual) | Logic Level Gate | 3.4A | 105 mOhm @ 3.4A，10V | 1V @ 250μA | 38nC @ 10V | 690pF @ 25V | ||
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Infineon Technologies |
5,044
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 55V 3.4A 8-SOIC
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- | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2W | 2 P-Channel (Dual) | Logic Level Gate | 3.4A | 105 mOhm @ 3.4A，10V | 1V @ 250μA | 38nC @ 10V | 690pF @ 25V | ||
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Infineon Technologies |
4,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 55V 4.7/3.4A 8SOIC
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2W | N and P-Channel | Logic Level Gate | 4.7A，3.4A | 50 mOhm @ 4.7A，10V | 1V @ 250μA | 36nC @ 10V | 740pF @ 25V | ||
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Infineon Technologies |
6,171
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 55V 4.7/3.4A 8SOIC
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Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2W | N and P-Channel | Logic Level Gate | 4.7A，3.4A | 50 mOhm @ 4.7A，10V | 1V @ 250μA | 36nC @ 10V | 740pF @ 25V | ||
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Infineon Technologies |
6,171
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 55V 4.7/3.4A 8SOIC
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- | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2W | N and P-Channel | Logic Level Gate | 4.7A，3.4A | 50 mOhm @ 4.7A，10V | 1V @ 250μA | 36nC @ 10V | 740pF @ 25V | ||
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Infineon Technologies |
4,314
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 55V 4.7A 8-SOIC
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Tube | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2W | 2 N-Channel (Dual) | Logic Level Gate | 4.7A | 50 mOhm @ 4.7A，10V | 1V @ 250μA | 36nC @ 10V | 740pF @ 25V | ||
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Infineon Technologies |
1,304
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 55V 3.4A 8-SOIC
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Tube | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2W | 2 P-Channel (Dual) | Logic Level Gate | 3.4A | 105 mOhm @ 3.4A，10V | 1V @ 250μA | 38nC @ 10V | 690pF @ 25V | ||
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Infineon Technologies |
5,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 8TDSON
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Tape & Reel (TR) | Automotive，AEC-Q101，OptiMOS | -55°C ~ 175°C (TJ) | 8-PowerVDFN | PG-TDSON-8-10 | Surface Mount | 65W | 2 N-Channel (Dual) | Logic Level Gate | 2A (Tc) | 35 mOhm @ 15A，10V | 2V @ 27μA | 23nC @ 10V | 790pF @ 25V | ||
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Infineon Technologies |
9,110
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 8TDSON
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Cut Tape (CT) | Automotive，AEC-Q101，OptiMOS | -55°C ~ 175°C (TJ) | 8-PowerVDFN | PG-TDSON-8-10 | Surface Mount | 65W | 2 N-Channel (Dual) | Logic Level Gate | 2A (Tc) | 35 mOhm @ 15A，10V | 2V @ 27μA | 23nC @ 10V | 790pF @ 25V | ||
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Infineon Technologies |
9,110
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 8TDSON
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- | Automotive，AEC-Q101，OptiMOS | -55°C ~ 175°C (TJ) | 8-PowerVDFN | PG-TDSON-8-10 | Surface Mount | 65W | 2 N-Channel (Dual) | Logic Level Gate | 2A (Tc) | 35 mOhm @ 15A，10V | 2V @ 27μA | 23nC @ 10V | 790pF @ 25V | ||
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Infineon Technologies |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 8TDSON
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Tape & Reel (TR) | Automotive，AEC-Q101，OptiMOS | -55°C ~ 175°C (TJ) | 8-PowerVDFN | PG-TDSON-8-10 | Surface Mount | 43W | 2 N-Channel (Dual) | Logic Level Gate | 20A | 65 mOhm @ 15A，10V | 2V @ 14μA | 12nC @ 10V | 410pF @ 25V | ||
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Infineon Technologies |
2,985
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 8TDSON
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Cut Tape (CT) | Automotive，AEC-Q101，OptiMOS | -55°C ~ 175°C (TJ) | 8-PowerVDFN | PG-TDSON-8-10 | Surface Mount | 43W | 2 N-Channel (Dual) | Logic Level Gate | 20A | 65 mOhm @ 15A，10V | 2V @ 14μA | 12nC @ 10V | 410pF @ 25V | ||
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Infineon Technologies |
2,985
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 8TDSON
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- | Automotive，AEC-Q101，OptiMOS | -55°C ~ 175°C (TJ) | 8-PowerVDFN | PG-TDSON-8-10 | Surface Mount | 43W | 2 N-Channel (Dual) | Logic Level Gate | 20A | 65 mOhm @ 15A，10V | 2V @ 14μA | 12nC @ 10V | 410pF @ 25V |
