Supplier Device Package:
Mounting Type:
Current - Continuous Drain (Id) @ 25°C:
Rds On (Max) @ Id,Vgs:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 1,761 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Mounting Type Power - Max FET Type FET Feature Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
BSD235CH6327XTSA1
Infineon Technologies
21,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V SOT363
Tape & Reel (TR) OptiMOS -55°C ~ 150°C (TJ) 6-VSSOP,SC-88,SOT-363 PG-SOT363-6 Surface Mount 500mW N and P-Channel Logic Level Gate 950mA,530mA 350 mOhm @ 950mA,4.5V 1.2V @ 1.6μA 0.34nC @ 4.5V 47pF @ 10V
BSD235CH6327XTSA1
Infineon Technologies
22,363
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V SOT363
Cut Tape (CT) OptiMOS -55°C ~ 150°C (TJ) 6-VSSOP,SC-88,SOT-363 PG-SOT363-6 Surface Mount 500mW N and P-Channel Logic Level Gate 950mA,530mA 350 mOhm @ 950mA,4.5V 1.2V @ 1.6μA 0.34nC @ 4.5V 47pF @ 10V
BSD235CH6327XTSA1
Infineon Technologies
22,363
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V SOT363
- OptiMOS -55°C ~ 150°C (TJ) 6-VSSOP,SC-88,SOT-363 PG-SOT363-6 Surface Mount 500mW N and P-Channel Logic Level Gate 950mA,530mA 350 mOhm @ 950mA,4.5V 1.2V @ 1.6μA 0.34nC @ 4.5V 47pF @ 10V
DMC2038LVT-7
Diodes Incorporated
132,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V TSOT26
Tape & Reel (TR) - -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSOT-26 Surface Mount 800mW N and P-Channel Logic Level Gate 3.7A,2.6A 35 mOhm @ 4A,4.5V 1V @ 250μA 17nC @ 10V 530pF @ 10V
DMC2038LVT-7
Diodes Incorporated
134,544
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V TSOT26
Cut Tape (CT) - -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSOT-26 Surface Mount 800mW N and P-Channel Logic Level Gate 3.7A,2.6A 35 mOhm @ 4A,4.5V 1V @ 250μA 17nC @ 10V 530pF @ 10V
DMC2038LVT-7
Diodes Incorporated
134,544
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V TSOT26
- - -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSOT-26 Surface Mount 800mW N and P-Channel Logic Level Gate 3.7A,2.6A 35 mOhm @ 4A,4.5V 1V @ 250μA 17nC @ 10V 530pF @ 10V
DMC2990UDJ-7
Diodes Incorporated
230,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V SOT963
Tape & Reel (TR) - -55°C ~ 150°C (TJ) SOT-963 SOT-963 Surface Mount 350mW N and P-Channel Logic Level Gate 450mA,310mA 990 mOhm @ 100mA,4.5V 1V @ 250μA 0.5nC @ 4.5V 27.6pF @ 15V
DMC2990UDJ-7
Diodes Incorporated
240,748
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V SOT963
Cut Tape (CT) - -55°C ~ 150°C (TJ) SOT-963 SOT-963 Surface Mount 350mW N and P-Channel Logic Level Gate 450mA,310mA 990 mOhm @ 100mA,4.5V 1V @ 250μA 0.5nC @ 4.5V 27.6pF @ 15V
DMC2990UDJ-7
Diodes Incorporated
240,748
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V SOT963
- - -55°C ~ 150°C (TJ) SOT-963 SOT-963 Surface Mount 350mW N and P-Channel Logic Level Gate 450mA,310mA 990 mOhm @ 100mA,4.5V 1V @ 250μA 0.5nC @ 4.5V 27.6pF @ 15V
PMGD280UN,115
Nexperia USA Inc.
24,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 0.87A 6TSSOP
Tape & Reel (TR) TrenchMOS -55°C ~ 150°C (TJ) 6-TSSOP,SC-88,SOT-363 6-TSSOP Surface Mount 400mW 2 N-Channel (Dual) Logic Level Gate 870mA 340 mOhm @ 200mA,4.5V 1V @ 250μA 0.89nC @ 4.5V 45pF @ 20V
PMGD280UN,115
Nexperia USA Inc.
26,526
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 0.87A 6TSSOP
Cut Tape (CT) TrenchMOS -55°C ~ 150°C (TJ) 6-TSSOP,SC-88,SOT-363 6-TSSOP Surface Mount 400mW 2 N-Channel (Dual) Logic Level Gate 870mA 340 mOhm @ 200mA,4.5V 1V @ 250μA 0.89nC @ 4.5V 45pF @ 20V
PMGD280UN,115
Nexperia USA Inc.
26,526
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 0.87A 6TSSOP
- TrenchMOS -55°C ~ 150°C (TJ) 6-TSSOP,SC-88,SOT-363 6-TSSOP Surface Mount 400mW 2 N-Channel (Dual) Logic Level Gate 870mA 340 mOhm @ 200mA,4.5V 1V @ 250μA 0.89nC @ 4.5V 45pF @ 20V
DMG1016V-7
Diodes Incorporated
9,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V SOT563
Tape & Reel (TR) - -55°C ~ 150°C (TJ) SOT-563,SOT-666 SOT-563 Surface Mount 530mW N and P-Channel Logic Level Gate 870mA,640mA 400 mOhm @ 600mA,4.5V 1V @ 250μA 0.74nC @ 4.5V 60.67pF @ 16V
DMG1016V-7
Diodes Incorporated
11,524
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V SOT563
Cut Tape (CT) - -55°C ~ 150°C (TJ) SOT-563,SOT-666 SOT-563 Surface Mount 530mW N and P-Channel Logic Level Gate 870mA,640mA 400 mOhm @ 600mA,4.5V 1V @ 250μA 0.74nC @ 4.5V 60.67pF @ 16V
DMG1016V-7
Diodes Incorporated
11,524
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V SOT563
- - -55°C ~ 150°C (TJ) SOT-563,SOT-666 SOT-563 Surface Mount 530mW N and P-Channel Logic Level Gate 870mA,640mA 400 mOhm @ 600mA,4.5V 1V @ 250μA 0.74nC @ 4.5V 60.67pF @ 16V
DMN2990UDJ-7
Diodes Incorporated
60,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 0.45A SOT-963
Tape & Reel (TR) - -55°C ~ 150°C (TJ) SOT-963 SOT-963 Surface Mount 350mW 2 N-Channel (Dual) Logic Level Gate 450mA 990 mOhm @ 100mA,4.5V 1V @ 250μA 0.5nC @ 4.5V 27.6pF @ 16V
DMN2990UDJ-7
Diodes Incorporated
62,876
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 0.45A SOT-963
Cut Tape (CT) - -55°C ~ 150°C (TJ) SOT-963 SOT-963 Surface Mount 350mW 2 N-Channel (Dual) Logic Level Gate 450mA 990 mOhm @ 100mA,4.5V 1V @ 250μA 0.5nC @ 4.5V 27.6pF @ 16V
DMN2990UDJ-7
Diodes Incorporated
62,876
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 0.45A SOT-963
- - -55°C ~ 150°C (TJ) SOT-963 SOT-963 Surface Mount 350mW 2 N-Channel (Dual) Logic Level Gate 450mA 990 mOhm @ 100mA,4.5V 1V @ 250μA 0.5nC @ 4.5V 27.6pF @ 16V
DMG1023UV-7
Diodes Incorporated
36,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 1.03A SOT563
Tape & Reel (TR) - -55°C ~ 150°C (TJ) SOT-563,SOT-666 SOT-563 Surface Mount 530mW 2 P-Channel (Dual) Logic Level Gate 1.03A 750 mOhm @ 430mA,4.5V 1V @ 250μA 0.62nC @ 4.5V 59.76pF @ 16V
DMG1023UV-7
Diodes Incorporated
37,570
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 1.03A SOT563
Cut Tape (CT) - -55°C ~ 150°C (TJ) SOT-563,SOT-666 SOT-563 Surface Mount 530mW 2 P-Channel (Dual) Logic Level Gate 1.03A 750 mOhm @ 430mA,4.5V 1V @ 250μA 0.62nC @ 4.5V 59.76pF @ 16V