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Discover 42 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Vishay Siliconix |
37,500
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 5.3A 8-SOIC
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Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.1W | 2 P-Channel (Dual) | Logic Level Gate | 30V | 25 mOhm @ 7.1A，10V | 3V @ 250μA | 50nC @ 10V | - | ||
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Vishay Siliconix |
38,444
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 5.3A 8-SOIC
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Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.1W | 2 P-Channel (Dual) | Logic Level Gate | 30V | 25 mOhm @ 7.1A，10V | 3V @ 250μA | 50nC @ 10V | - | ||
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Vishay Siliconix |
38,444
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 5.3A 8-SOIC
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- | TrenchFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.1W | 2 P-Channel (Dual) | Logic Level Gate | 30V | 25 mOhm @ 7.1A，10V | 3V @ 250μA | 50nC @ 10V | - | ||
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Vishay Siliconix |
15,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 5.3A 8-SOIC
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Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 3.1W | 2 N-Channel (Dual) | Logic Level Gate | 60V | 58 mOhm @ 4.3A，10V | 3V @ 250μA | 20nC @ 10V | 665pF @ 15V | ||
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Vishay Siliconix |
16,676
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 5.3A 8-SOIC
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Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 3.1W | 2 N-Channel (Dual) | Logic Level Gate | 60V | 58 mOhm @ 4.3A，10V | 3V @ 250μA | 20nC @ 10V | 665pF @ 15V | ||
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Vishay Siliconix |
16,676
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 5.3A 8-SOIC
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- | TrenchFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 3.1W | 2 N-Channel (Dual) | Logic Level Gate | 60V | 58 mOhm @ 4.3A，10V | 3V @ 250μA | 20nC @ 10V | 665pF @ 15V | ||
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Diodes Incorporated |
22,500
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 40V 5.3A 8SO
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.8W | N and P-Channel | Logic Level Gate | 40V | 45 mOhm @ 3A，10V | 1.8V @ 250μA | 37.56nC @ 10V | 1790.8pF @ 20V | ||
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Diodes Incorporated |
24,742
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 40V 5.3A 8SO
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.8W | N and P-Channel | Logic Level Gate | 40V | 45 mOhm @ 3A，10V | 1.8V @ 250μA | 37.56nC @ 10V | 1790.8pF @ 20V | ||
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Diodes Incorporated |
24,742
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 40V 5.3A 8SO
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- | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.8W | N and P-Channel | Logic Level Gate | 40V | 45 mOhm @ 3A，10V | 1.8V @ 250μA | 37.56nC @ 10V | 1790.8pF @ 20V | ||
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Diodes Incorporated |
2,500
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 40V 5.3A 8SO
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Tape & Reel (TR) | Automotive，AEC-Q101 | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.8W | N and P-Channel Complementary | Standard | 40V | 45 mOhm @ 3A，10V | 1.8V @ 250μA | 37.56nC @ 10V | 1790.8pF @ 20V | ||
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Diodes Incorporated |
3,086
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 40V 5.3A 8SO
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Cut Tape (CT) | Automotive，AEC-Q101 | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.8W | N and P-Channel Complementary | Standard | 40V | 45 mOhm @ 3A，10V | 1.8V @ 250μA | 37.56nC @ 10V | 1790.8pF @ 20V | ||
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Diodes Incorporated |
3,086
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 40V 5.3A 8SO
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- | Automotive，AEC-Q101 | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.8W | N and P-Channel Complementary | Standard | 40V | 45 mOhm @ 3A，10V | 1.8V @ 250μA | 37.56nC @ 10V | 1790.8pF @ 20V | ||
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Vishay Siliconix |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 5.3A 8-SOIC
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Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 3.1W | 2 N-Channel (Dual) | Logic Level Gate | 60V | 58 mOhm @ 4.3A，10V | 3V @ 250μA | 20nC @ 10V | 665pF @ 15V | ||
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Vishay Siliconix |
1,925
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 5.3A 8-SOIC
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Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 3.1W | 2 N-Channel (Dual) | Logic Level Gate | 60V | 58 mOhm @ 4.3A，10V | 3V @ 250μA | 20nC @ 10V | 665pF @ 15V | ||
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Vishay Siliconix |
1,925
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 5.3A 8-SOIC
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- | TrenchFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 3.1W | 2 N-Channel (Dual) | Logic Level Gate | 60V | 58 mOhm @ 4.3A，10V | 3V @ 250μA | 20nC @ 10V | 665pF @ 15V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 5.3A 8-SOIC
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 58 mOhm @ 2.9A，4.5V | 700mV @ 250μA | 29nC @ 4.5V | 780pF @ 15V | ||
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Infineon Technologies |
1,099
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 5.3A 8-SOIC
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Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 58 mOhm @ 2.9A，4.5V | 700mV @ 250μA | 29nC @ 4.5V | 780pF @ 15V | ||
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Infineon Technologies |
1,099
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 5.3A 8-SOIC
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- | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 58 mOhm @ 2.9A，4.5V | 700mV @ 250μA | 29nC @ 4.5V | 780pF @ 15V | ||
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Vishay Siliconix |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 5.3A 8-SOIC
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Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 3.1W | 2 N-Channel (Dual) | Logic Level Gate | 60V | 58 mOhm @ 4.3A，10V | 3V @ 250μA | 20nC @ 10V | 665pF @ 15V | ||
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Vishay Siliconix |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 5.3A 8-SOIC
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Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 3.1W | 2 N-Channel (Dual) | Logic Level Gate | 60V | 58 mOhm @ 4.3A，10V | 3V @ 250μA | 20nC @ 10V | 665pF @ 15V |
