Package / Case:
Supplier Device Package:
Power - Max:
Drain to Source Voltage (Vdss):
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 4 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Mounting Type Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
BUK9K45-100E,115
Nexperia USA Inc.
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 100V 21A LFPAK56D
Tape & Reel (TR) Automotive,AEC-Q101,TrenchMOS -55°C ~ 175°C (TJ) SOT-1205,8-LFPAK56 LFPAK56D Surface Mount 53W 2 N-Channel (Dual) Logic Level Gate 100V 42 mOhm @ 5A,10V 2.1V @ 1mA 33.5nC @ 10V 2152pF @ 25V
BUK9K45-100E,115
Nexperia USA Inc.
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 100V 21A LFPAK56D
Cut Tape (CT) Automotive,AEC-Q101,TrenchMOS -55°C ~ 175°C (TJ) SOT-1205,8-LFPAK56 LFPAK56D Surface Mount 53W 2 N-Channel (Dual) Logic Level Gate 100V 42 mOhm @ 5A,10V 2.1V @ 1mA 33.5nC @ 10V 2152pF @ 25V
BUK9K45-100E,115
Nexperia USA Inc.
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 100V 21A LFPAK56D
- Automotive,AEC-Q101,TrenchMOS -55°C ~ 175°C (TJ) SOT-1205,8-LFPAK56 LFPAK56D Surface Mount 53W 2 N-Channel (Dual) Logic Level Gate 100V 42 mOhm @ 5A,10V 2.1V @ 1mA 33.5nC @ 10V 2152pF @ 25V
APTM100A40FT1G
Microsemi Corporation
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 1000V 21A SP1
Bulk - -40°C ~ 150°C (TJ) SP1 SP1 Chassis Mount 390W 2 N-Channel (Half Bridge) Standard 1000V (1kV) 480 mOhm @ 18A,10V 5V @ 2.5mA 305nC @ 10V 7868pF @ 25V