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- Supplier Device Package：
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- Power - Max：
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- Drain to Source Voltage (Vdss)：
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- Rds On (Max) @ Id，Vgs：
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Discover 58 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Diodes Incorporated |
12,500
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 10A 8SO
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 1.42W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 20 mOhm @ 8.5A，10V | 3V @ 250μA | 10.5nC @ 10V | 478.9pF @ 16V | ||
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Diodes Incorporated |
14,781
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 10A 8SO
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 1.42W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 20 mOhm @ 8.5A，10V | 3V @ 250μA | 10.5nC @ 10V | 478.9pF @ 16V | ||
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Diodes Incorporated |
14,781
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 10A 8SO
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- | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 1.42W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 20 mOhm @ 8.5A，10V | 3V @ 250μA | 10.5nC @ 10V | 478.9pF @ 16V | ||
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Sanken |
1,084
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 3N/3P-CH 60V 10A 12-SIP
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Tube | - | 150°C (TJ) | 12-SIP | 12-SIP w/fin | Through Hole | 5W | 3 N and 3 P-Channel (3-Phase Bridge) | Logic Level Gate | 60V | 140 mOhm @ 5A，4V | - | - | 460pF @ 10V | ||
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Sanken |
630
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 3N/3P-CH 60V 10A 12-SIP
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Tube | - | 150°C (TJ) | 12-SIP | 12-SIP | Through Hole | 4W | 3 N and 3 P-Channel (3-Phase Bridge) | Standard | 60V | 140 mOhm @ 5A，4V | 2V @ 250μA | - | 460pF @ 10V | ||
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ON Semiconductor |
5,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 10A 6WLCSP
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Tape & Reel (TR) | PowerTrench | -55°C ~ 150°C (TJ) | 6-XFBGA，WLCSP | 6-WLCSP (1.3x2.3) | Surface Mount | 500mW | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 13 mOhm @ 1A，4.5V | 1.2V @ 250μA | 24nC @ 10V | 2055pF @ 10V | ||
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ON Semiconductor |
6,056
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 10A 6WLCSP
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Cut Tape (CT) | PowerTrench | -55°C ~ 150°C (TJ) | 6-XFBGA，WLCSP | 6-WLCSP (1.3x2.3) | Surface Mount | 500mW | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 13 mOhm @ 1A，4.5V | 1.2V @ 250μA | 24nC @ 10V | 2055pF @ 10V | ||
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ON Semiconductor |
6,056
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 10A 6WLCSP
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- | PowerTrench | -55°C ~ 150°C (TJ) | 6-XFBGA，WLCSP | 6-WLCSP (1.3x2.3) | Surface Mount | 500mW | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 13 mOhm @ 1A，4.5V | 1.2V @ 250μA | 24nC @ 10V | 2055pF @ 10V | ||
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Micro Commercial Co |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 10A
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 6-WFDFN Exposed Pad | DFN2030-6 | Surface Mount | - | 2 N-Channel (Dual) Common Drain | Standard | 20V | 10 mOhm @ 8A，10V | 1V @ 250μA | 18.5nC @ 4.5V | 1955pF @ 10V | ||
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Micro Commercial Co |
2,820
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 10A
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 6-WFDFN Exposed Pad | DFN2030-6 | Surface Mount | - | 2 N-Channel (Dual) Common Drain | Standard | 20V | 10 mOhm @ 8A，10V | 1V @ 250μA | 18.5nC @ 4.5V | 1955pF @ 10V | ||
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Micro Commercial Co |
2,820
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 10A
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- | - | -55°C ~ 150°C (TJ) | 6-WFDFN Exposed Pad | DFN2030-6 | Surface Mount | - | 2 N-Channel (Dual) Common Drain | Standard | 20V | 10 mOhm @ 8A，10V | 1V @ 250μA | 18.5nC @ 4.5V | 1955pF @ 10V | ||
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STMicroelectronics |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 10A 8SO
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Tape & Reel (TR) | STripFET V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2.7W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 19 mOhm @ 5A，10V | 1V @ 250μA | 5.4nC @ 4.5V | 724pF @ 25V | ||
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STMicroelectronics |
1,102
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 10A 8SO
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Cut Tape (CT) | STripFET V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2.7W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 19 mOhm @ 5A，10V | 1V @ 250μA | 5.4nC @ 4.5V | 724pF @ 25V | ||
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STMicroelectronics |
1,102
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 10A 8SO
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- | STripFET V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2.7W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 19 mOhm @ 5A，10V | 1V @ 250μA | 5.4nC @ 4.5V | 724pF @ 25V | ||
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ON Semiconductor |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 100V
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Tape & Reel (TR) | PowerTrench | -55°C ~ 150°C (TJ) | 8-PowerWDFN | 8-Power 5x6 | Surface Mount | 2.2W | 2 N-Channel (Dual) Common Source | Standard | 100V | 10.5 mOhm @ 10A，10V | 4V @ 250μA | 30nC @ 10V | 2060pF @ 50V | ||
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ON Semiconductor |
1,532
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 100V
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Cut Tape (CT) | PowerTrench | -55°C ~ 150°C (TJ) | 8-PowerWDFN | 8-Power 5x6 | Surface Mount | 2.2W | 2 N-Channel (Dual) Common Source | Standard | 100V | 10.5 mOhm @ 10A，10V | 4V @ 250μA | 30nC @ 10V | 2060pF @ 50V | ||
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ON Semiconductor |
1,532
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 100V
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- | PowerTrench | -55°C ~ 150°C (TJ) | 8-PowerWDFN | 8-Power 5x6 | Surface Mount | 2.2W | 2 N-Channel (Dual) Common Source | Standard | 100V | 10.5 mOhm @ 10A，10V | 4V @ 250μA | 30nC @ 10V | 2060pF @ 50V | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 10A 8-SOIC
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2W | 2 N-Channel (Dual) | Logic Level Gate | 20V | 13.4 mOhm @ 10A，10V | 2.55V @ 250μA | 11nC @ 4.5V | 960pF @ 10V | ||
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Infineon Technologies |
1,464
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 10A 8-SOIC
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Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2W | 2 N-Channel (Dual) | Logic Level Gate | 20V | 13.4 mOhm @ 10A，10V | 2.55V @ 250μA | 11nC @ 4.5V | 960pF @ 10V | ||
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Infineon Technologies |
1,464
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 10A 8-SOIC
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- | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | Surface Mount | 2W | 2 N-Channel (Dual) | Logic Level Gate | 20V | 13.4 mOhm @ 10A，10V | 2.55V @ 250μA | 11nC @ 4.5V | 960pF @ 10V |
