Packaging:
Package / Case:
Supplier Device Package:
Power - Max:
Drain to Source Voltage (Vdss):
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 2 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Mounting Type Power - Max FET Type Drain to Source Voltage (Vdss) Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
FMM110-015X2F
IXYS
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 150V 53A I4-PAC
Tube GigaMOS,HiPerFET,TrenchT2 -55°C ~ 175°C (TJ) i4-Pac?-5 ISOPLUS i4-PAC? Through Hole 180W 2 N-Channel (Dual) 150V 20 mOhm @ 55A,10V 4.5V @ 250μA 150nC @ 10V 8600pF @ 25V
APTMC170AM60CT1AG
Microsemi Corporation
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 1700V 53A SP1
Bulk - -40°C ~ 150°C (TJ) SP1 SP1 Chassis Mount 350W 2 N Channel (Phase Leg) 1700V (1.7kV) 60 mOhm @ 50A,20V 2.3V @ 2.5mA (Typ) 190nC @ 20V 3080pF @ 1000V