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Discover 23 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Vishay Siliconix |
20,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 6.9A 8-SOIC
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Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | 8-SO | 2.8W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 35 mOhm @ 5.9A，10V | 3V @ 250μA | 15nC @ 10V | 530pF @ 15V | ||
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Vishay Siliconix |
20,137
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 6.9A 8-SOIC
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Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | 8-SO | 2.8W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 35 mOhm @ 5.9A，10V | 3V @ 250μA | 15nC @ 10V | 530pF @ 15V | ||
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Vishay Siliconix |
20,137
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 6.9A 8-SOIC
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- | TrenchFET | -55°C ~ 150°C (TJ) | 8-SO | 2.8W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 35 mOhm @ 5.9A，10V | 3V @ 250μA | 15nC @ 10V | 530pF @ 15V | ||
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ON Semiconductor |
70,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 6.9A 8-SOIC
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Tape & Reel (TR) | PowerTrench | -55°C ~ 150°C (TJ) | 8-SO | 900mW | 2 P-Channel (Dual) | Logic Level Gate | 30V | 22 mOhm @ 6.9A，10V | 3V @ 250μA | 40nC @ 10V | 1360pF @ 15V | ||
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ON Semiconductor |
72,295
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 6.9A 8-SOIC
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Cut Tape (CT) | PowerTrench | -55°C ~ 150°C (TJ) | 8-SO | 900mW | 2 P-Channel (Dual) | Logic Level Gate | 30V | 22 mOhm @ 6.9A，10V | 3V @ 250μA | 40nC @ 10V | 1360pF @ 15V | ||
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ON Semiconductor |
72,295
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 6.9A 8-SOIC
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- | PowerTrench | -55°C ~ 150°C (TJ) | 8-SO | 900mW | 2 P-Channel (Dual) | Logic Level Gate | 30V | 22 mOhm @ 6.9A，10V | 3V @ 250μA | 40nC @ 10V | 1360pF @ 15V | ||
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Alpha & Omega Semiconductor Inc. |
3,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 6.9A 8-SOIC
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 27 mOhm @ 6.9A，10V | 1.5V @ 250μA | 7nC @ 4.5V | 630pF @ 15V | ||
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Alpha & Omega Semiconductor Inc. |
3,870
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 6.9A 8-SOIC
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-SOIC | 2W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 27 mOhm @ 6.9A，10V | 1.5V @ 250μA | 7nC @ 4.5V | 630pF @ 15V | ||
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Alpha & Omega Semiconductor Inc. |
3,870
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 6.9A 8-SOIC
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- | - | -55°C ~ 150°C (TJ) | 8-SOIC | 2W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 27 mOhm @ 6.9A，10V | 1.5V @ 250μA | 7nC @ 4.5V | 630pF @ 15V | ||
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Diodes Incorporated |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 6.9A 8-SOIC
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOP | 2.5W | 2 P-Channel (Dual) | Logic Level Gate | 30V | 45 mOhm @ 6A，10V | 2.1V @ 250μA | 13.7nC @ 10V | 722pF @ 25V | ||
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Diodes Incorporated |
2,387
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 6.9A 8-SOIC
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-SOP | 2.5W | 2 P-Channel (Dual) | Logic Level Gate | 30V | 45 mOhm @ 6A，10V | 2.1V @ 250μA | 13.7nC @ 10V | 722pF @ 25V | ||
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Diodes Incorporated |
2,387
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 6.9A 8-SOIC
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- | - | -55°C ~ 150°C (TJ) | 8-SOP | 2.5W | 2 P-Channel (Dual) | Logic Level Gate | 30V | 45 mOhm @ 6A，10V | 2.1V @ 250μA | 13.7nC @ 10V | 722pF @ 25V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 6.5A 8SOIC
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Tape & Reel (TR) | HEXFET | -55°C ~ 175°C (TJ) | 8-SO | 2.4W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 29 mOhm @ 6.9A，10V | 3V @ 250μA | 33nC @ 10V | 755pF @ 25V | ||
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Infineon Technologies |
3,944
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 6.5A 8SOIC
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Cut Tape (CT) | HEXFET | -55°C ~ 175°C (TJ) | 8-SO | 2.4W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 29 mOhm @ 6.9A，10V | 3V @ 250μA | - | 755pF @ 25V | ||
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Infineon Technologies |
3,944
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 6.5A 8SOIC
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- | HEXFET | -55°C ~ 175°C (TJ) | 8-SO | 2.4W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 29 mOhm @ 6.9A，10V | 3V @ 250μA | - | 755pF @ 25V | ||
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Diodes Incorporated |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 40V 6.9A 8SO
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SO | 1.8W | 2 P-Channel (Dual) | Logic Level Gate | 40V | 25 mOhm @ 3A，10V | 1.8V @ 250μA | 33.7nC @ 10V | 1640pF @ 20V | ||
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Diodes Incorporated |
289
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 40V 6.9A 8SO
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-SO | 1.8W | 2 P-Channel (Dual) | Logic Level Gate | 40V | 25 mOhm @ 3A，10V | 1.8V @ 250μA | 33.7nC @ 10V | 1640pF @ 20V | ||
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Diodes Incorporated |
289
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 40V 6.9A 8SO
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- | - | -55°C ~ 150°C (TJ) | 8-SO | 1.8W | 2 P-Channel (Dual) | Logic Level Gate | 40V | 25 mOhm @ 3A，10V | 1.8V @ 250μA | 33.7nC @ 10V | 1640pF @ 20V | ||
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Diodes Incorporated |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 6.9A 8-SOIC
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SO | 2W | 2 N-Channel (Dual) | Standard | 30V | 20 mOhm @ 6.9A，10V | 2.1V @ 250μA | 13nC @ 10V | 725pF @ 15V | ||
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Diodes Incorporated |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 6.9A 8-SOIC
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOP | 2W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 20 mOhm @ 6.9A，10V | 2.1V @ 250μA | 13nC @ 10V | 725pF @ 15V |
