- Manufacturer：
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- Operating Temperature：
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- Supplier Device Package：
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- FET Feature：
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- Rds On (Max) @ Id，Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Selected conditions:
Discover 45 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Infineon Technologies |
12,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 3.6A PQFN
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-PQFN (2x2) | 1.5W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 63 mOhm @ 3.4A，4.5V | 1.1V @ 10μA | 2.8nC @ 4.5V | 270pF @ 25V | ||
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Infineon Technologies |
14,050
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 3.6A 2X2 PQFN
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Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-PQFN (2x2) | 1.5W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 63 mOhm @ 3.4A，4.5V | 1.1V @ 10μA | 2.8nC @ 4.5V | 270pF @ 25V | ||
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Infineon Technologies |
14,050
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 3.6A 2X2 PQFN
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- | HEXFET | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-PQFN (2x2) | 1.5W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 63 mOhm @ 3.4A，4.5V | 1.1V @ 10μA | 2.8nC @ 4.5V | 270pF @ 25V | ||
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ON Semiconductor |
12,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 3.6A 6MICROFET
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Tape & Reel (TR) | PowerTrench | -55°C ~ 150°C (TJ) | 6-UDFN Exposed Pad | 6-MicroFET (2x2) | 700mW | 2 P-Channel (Dual) | Logic Level Gate | 20V | 60 mOhm @ 3.6A，4.5V | 1.5V @ 250μA | 17nC @ 4.5V | 885pF @ 10V | ||
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ON Semiconductor |
13,494
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 3.6A 6MICROFET
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Cut Tape (CT) | PowerTrench | -55°C ~ 150°C (TJ) | 6-UDFN Exposed Pad | 6-MicroFET (2x2) | 700mW | 2 P-Channel (Dual) | Logic Level Gate | 20V | 60 mOhm @ 3.6A，4.5V | 1.5V @ 250μA | 17nC @ 4.5V | 885pF @ 10V | ||
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ON Semiconductor |
13,494
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 3.6A 6MICROFET
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- | PowerTrench | -55°C ~ 150°C (TJ) | 6-UDFN Exposed Pad | 6-MicroFET (2x2) | 700mW | 2 P-Channel (Dual) | Logic Level Gate | 20V | 60 mOhm @ 3.6A，4.5V | 1.5V @ 250μA | 17nC @ 4.5V | 885pF @ 10V | ||
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Infineon Technologies |
8,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 80V 3.6A 8-SOIC
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 80V | 73 mOhm @ 2.2A，10V | 4V @ 250μA | 23nC @ 10V | 660pF @ 25V | ||
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Infineon Technologies |
8,048
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 80V 3.6A 8-SOIC
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Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 80V | 73 mOhm @ 2.2A，10V | 4V @ 250μA | 23nC @ 10V | 660pF @ 25V | ||
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Infineon Technologies |
8,048
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 80V 3.6A 8-SOIC
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- | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 80V | 73 mOhm @ 2.2A，10V | 4V @ 250μA | 23nC @ 10V | 660pF @ 25V | ||
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Nexperia USA Inc. |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 3.6A HUSON6
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 6-UDFN Exposed Pad | DFN2020-6 | 515mW | 2 P-Channel (Dual) | Logic Level Gate | 20V | 67 mOhm @ 2A，4.5V | 950mV @ 250μA | 9.5nC @ 4.5V | 804pF @ 10V | ||
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Nexperia USA Inc. |
2,344
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 3.6A HUSON6
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 6-UDFN Exposed Pad | DFN2020-6 | 515mW | 2 P-Channel (Dual) | Logic Level Gate | 20V | 67 mOhm @ 2A，4.5V | 950mV @ 250μA | 9.5nC @ 4.5V | 804pF @ 10V | ||
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Nexperia USA Inc. |
2,344
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 3.6A HUSON6
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- | - | -55°C ~ 150°C (TJ) | 6-UDFN Exposed Pad | DFN2020-6 | 515mW | 2 P-Channel (Dual) | Logic Level Gate | 20V | 67 mOhm @ 2A，4.5V | 950mV @ 250μA | 9.5nC @ 4.5V | 804pF @ 10V | ||
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Infineon Technologies |
16,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 3.6A 8-SOIC
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 30V | 100 mOhm @ 1.8A，10V | 1V @ 250μA | 25nC @ 10V | 440pF @ 25V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 3.6A 8-SOIC
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 30V | 100 mOhm @ 1.8A，10V | 1V @ 250μA | 25nC @ 10V | 440pF @ 25V | ||
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Infineon Technologies |
790
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 3.6A 8-SOIC
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Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 30V | 100 mOhm @ 1.8A，10V | 1V @ 250μA | 25nC @ 10V | 440pF @ 25V | ||
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Infineon Technologies |
790
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 3.6A 8-SOIC
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- | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 30V | 100 mOhm @ 1.8A，10V | 1V @ 250μA | 25nC @ 10V | 440pF @ 25V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 3.6A 8-SOIC
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Tube | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 30V | 100 mOhm @ 1.8A，10V | 1V @ 250μA | 25nC @ 10V | 440pF @ 25V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 80V 3.6A 8-SOIC
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Tube | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 80V | 73 mOhm @ 2.2A，10V | 4V @ 250μA | 23nC @ 10V | 660pF @ 25V | ||
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ON Semiconductor |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 62V 3.6A 8-SOIC
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | 2.5W | 2 N-Channel (Dual) | Logic Level Gate | 62V | 110 mOhm @ 3.6A，10V | 3V @ 250μA | 4.9nC @ 5V | 250pF @ 25V | ||
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Vishay Siliconix |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 75V 3.6A 8-SOIC
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Tape & Reel (TR) | TrenchFET | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.4W | 2 N-Channel (Dual) | Logic Level Gate | 75V | 48 mOhm @ 4.8A，10V | 3V @ 250μA | 21nC @ 10V | - |
