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- FET Feature：
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- Rds On (Max) @ Id，Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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Discover 15 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Diodes Incorporated |
9,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 4.2A SOT-26
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Tape & Reel (TR) | - | SOT-23-6 | SOT-26 | 980mW | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 28 mOhm @ 8.2A，4.5V | 900mV @ 250μA | 8.3nC @ 4.5V | 856pF @ 10V | ||
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Diodes Incorporated |
12,717
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 4.2A SOT-26
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Cut Tape (CT) | - | SOT-23-6 | SOT-26 | 980mW | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 28 mOhm @ 8.2A，4.5V | 900mV @ 250μA | 8.3nC @ 4.5V | 856pF @ 10V | ||
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Diodes Incorporated |
12,717
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 4.2A SOT-26
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- | - | SOT-23-6 | SOT-26 | 980mW | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 28 mOhm @ 8.2A，4.5V | 900mV @ 250μA | 8.3nC @ 4.5V | 856pF @ 10V | ||
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Diodes Incorporated |
500
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 4.2A 8-SOIC
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Tape & Reel (TR) | - | 8-SOIC (0.154"，3.90mm Width) | 8-SOP | 1.8W | 2 P-Channel (Dual) | Logic Level Gate | 30V | 45 mOhm @ 4.2A，10V | 1V @ 250μA (Min) | 29.6nC @ 10V | 1022pF @ 15V | ||
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Diodes Incorporated |
503
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 4.2A 8-SOIC
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Cut Tape (CT) | - | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.8W | 2 P-Channel (Dual) | Logic Level Gate | 30V | 45 mOhm @ 4.2A，10V | 1V @ 250μA (Min) | 29.6nC @ 10V | 1022pF @ 15V | ||
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Vishay Siliconix |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 4.2A 1212-8
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Cut Tape (CT) | TrenchFET | PowerPAK? 1212-8 Dual | PowerPAK? 1212-8 Dual | 1.3W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 51 mOhm @ 5.7A，4.5V | 1V @ 250μA | 15nC @ 4.5V | - | ||
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Vishay Siliconix |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 4.2A 1212-8
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- | TrenchFET | PowerPAK? 1212-8 Dual | PowerPAK? 1212-8 Dual | 1.3W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 51 mOhm @ 5.7A，4.5V | 1V @ 250μA | 15nC @ 4.5V | - | ||
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Vishay Siliconix |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 4.2A 1212-8
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Tape & Reel (TR) | TrenchFET | PowerPAK? 1212-8 Dual | PowerPAK? 1212-8 Dual | 1.3W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 51 mOhm @ 5.7A，4.5V | 1V @ 250μA | 15nC @ 4.5V | - | ||
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Vishay Siliconix |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 4.2A 1212-8
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Cut Tape (CT) | TrenchFET | PowerPAK? 1212-8 Dual | PowerPAK? 1212-8 Dual | 1.3W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 51 mOhm @ 5.7A，4.5V | 1V @ 250μA | 15nC @ 4.5V | - | ||
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Vishay Siliconix |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 4.2A 1212-8
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- | TrenchFET | PowerPAK? 1212-8 Dual | PowerPAK? 1212-8 Dual | 1.3W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 51 mOhm @ 5.7A，4.5V | 1V @ 250μA | 15nC @ 4.5V | - | ||
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Vishay Siliconix |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 40V 4.2A 8-SOIC
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Tape & Reel (TR) | TrenchFET | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.1W | 2 N-Channel (Dual) | Logic Level Gate | 40V | 36 mOhm @ 5.7A，10V | 1V @ 250μA (Min) | 14nC @ 10V | - | ||
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Vishay Siliconix |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 40V 4.2A 8-SOIC
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Tape & Reel (TR) | TrenchFET | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.1W | 2 N-Channel (Dual) | Logic Level Gate | 40V | 36 mOhm @ 5.7A，10V | 1V @ 250μA (Min) | 14nC @ 10V | - | ||
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Central Semiconductor Corp |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 4.2A TLM832DS
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Tape & Reel (TR) | - | 8-TDFN Exposed Pad | TLM832DS | 1.65W | 2 P-Channel (Dual) | Standard | 30V | 70 mOhm @ 4.2A，10V | 1.3V @ 250μA | 6.4nC @ 4.5V | 760pF @ 15V | |||
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Central Semiconductor Corp |
2,971
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 4.2A TLM832DS
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Cut Tape (CT) | - | 8-TDFN Exposed Pad | TLM832DS | 1.65W | 2 P-Channel (Dual) | Standard | 30V | 70 mOhm @ 4.2A，10V | 1.3V @ 250μA | 6.4nC @ 4.5V | 760pF @ 15V | |||
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Central Semiconductor Corp |
2,971
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 4.2A TLM832DS
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- | - | 8-TDFN Exposed Pad | TLM832DS | 1.65W | 2 P-Channel (Dual) | Standard | 30V | 70 mOhm @ 4.2A，10V | 1.3V @ 250μA | 6.4nC @ 4.5V | 760pF @ 15V |
