Series:
Supplier Device Package:
Power - Max:
FET Feature:
Drain to Source Voltage (Vdss):
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 9 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Package / Case Supplier Device Package Power - Max FET Feature Drain to Source Voltage (Vdss) Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
DMG6602SVT-7
Diodes Incorporated
51,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V TSOT23-6
Tape & Reel (TR) - SOT-23-6 Thin,TSOT-23-6 TSOT-23-6 840mW Logic Level Gate 30V 60 mOhm @ 3.1A,10V 2.3V @ 250μA 13nC @ 10V 400pF @ 15V
DMG6602SVT-7
Diodes Incorporated
53,816
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V TSOT23-6
Cut Tape (CT) - SOT-23-6 Thin,TSOT-23-6 TSOT-23-6 840mW Logic Level Gate 30V 60 mOhm @ 3.1A,10V 2.3V @ 250μA 13nC @ 10V 400pF @ 15V
DMG6602SVT-7
Diodes Incorporated
53,816
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V TSOT23-6
- - SOT-23-6 Thin,TSOT-23-6 TSOT-23-6 840mW Logic Level Gate 30V 60 mOhm @ 3.1A,10V 2.3V @ 250μA 13nC @ 10V 400pF @ 15V
DMG6602SVTQ-7
Diodes Incorporated
9,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V TSOT26
Tape & Reel (TR) - SOT-23-6 Thin,TSOT-23-6 TSOT-26 840mW Logic Level Gate 30V 60 mOhm @ 3.1A,10V 2.3V @ 250μA 13nC @ 10V 400pF @ 15V
DMG6602SVTQ-7
Diodes Incorporated
9,099
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V TSOT26
Cut Tape (CT) - SOT-23-6 Thin,TSOT-23-6 TSOT-26 840mW Logic Level Gate 30V 60 mOhm @ 3.1A,10V 2.3V @ 250μA 13nC @ 10V 400pF @ 15V
DMG6602SVTQ-7
Diodes Incorporated
9,099
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V TSOT26
- - SOT-23-6 Thin,TSOT-23-6 TSOT-26 840mW Logic Level Gate 30V 60 mOhm @ 3.1A,10V 2.3V @ 250μA 13nC @ 10V 400pF @ 15V
SI4590DY-T1-GE3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P CHAN 100V SO8 DUAL
Tape & Reel (TR) TrenchFET 8-SOIC (0.154",3.90mm Width) 8-SO 2.4W,3.4W - 100V 57 mOhm @ 2A,10V 2.5V @ 250μA 11.5nC @ 10V 360pF @ 50V
SI4590DY-T1-GE3
Vishay Siliconix
755
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P CHAN 100V SO8 DUAL
Cut Tape (CT) TrenchFET 8-SOIC (0.154",3.90mm Width) 8-SO 2.4W,3.4W - 100V 57 mOhm @ 2A,10V 2.5V @ 250μA 11.5nC @ 10V 360pF @ 50V
SI4590DY-T1-GE3
Vishay Siliconix
755
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P CHAN 100V SO8 DUAL
- TrenchFET 8-SOIC (0.154",3.90mm Width) 8-SO 2.4W,3.4W - 100V 57 mOhm @ 2A,10V 2.5V @ 250μA 11.5nC @ 10V 360pF @ 50V