Drain to Source Voltage (Vdss):
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 6 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Drain to Source Voltage (Vdss) Rds On (Max) @ Id,Vgs Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
SQJ200EP-T1_GE3
Vishay Siliconix
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 20A/60A PPAK SO
Tape & Reel (TR) 20V 8.8 mOhm @ 16A,10V 18nC @ 10V 975pF @ 10V
SQJ200EP-T1_GE3
Vishay Siliconix
5,887
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 20A/60A PPAK SO
Cut Tape (CT) 20V 8.8 mOhm @ 16A,10V 18nC @ 10V 975pF @ 10V
SQJ200EP-T1_GE3
Vishay Siliconix
5,887
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 20A/60A PPAK SO
- 20V 8.8 mOhm @ 16A,10V 18nC @ 10V 975pF @ 10V
SQJ202EP-T1_GE3
Vishay Siliconix
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 12V 20A/60A PPAK SO
Tape & Reel (TR) 12V 6.5 mOhm @ 15A,10V 22nC @ 10V 975pF @ 6V
SQJ202EP-T1_GE3
Vishay Siliconix
5,991
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 12V 20A/60A PPAK SO
Cut Tape (CT) 12V 6.5 mOhm @ 15A,10V 22nC @ 10V 975pF @ 6V
SQJ202EP-T1_GE3
Vishay Siliconix
5,991
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 12V 20A/60A PPAK SO
- 12V 6.5 mOhm @ 15A,10V 22nC @ 10V 975pF @ 6V