FETs, MOSFETs - Arrays - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Operating Temperature：

Package / Case：

Supplier Device Package：

Power - Max：

FET Type：

FET Feature：

Drain to Source Voltage (Vdss)：

Rds On (Max) @ Id，Vgs：

Vgs(th) (Max) @ Id：

Gate Charge (Qg) (Max) @ Vgs：

Input Capacitance (Ciss) (Max) @ Vds：

Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Operating Temperature	Package / Case	Supplier Device Package	Power - Max	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Operating Temperature	Package / Case	Supplier Device Package	Power - Max	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
	BSZ0909NDXTMA1	Infineon Technologies	5,000	3 days	-	MOSFET 2 N-CH 30V 20A WISON-8 MOQ: 1 MPQ: 1	MOSFET 2 N-CH 30V 20A WISON-8	Tape & Reel (TR)	OptiMOS	-55°C ~ 150°C (TJ)	8-PowerVDFN	PG-WISON-8	17W	2 N-Channel (Dual)	Logic Level Gate，4.5V Drive	30V	18 mOhm @ 9A，10V	2V @ 250μA	2.6nC @ 4.5V	360pF @ 15V
	BSZ0909NDXTMA1	Infineon Technologies	5,451	3 days	-	MOSFET 2 N-CH 30V 20A WISON-8 MOQ: 1 MPQ: 1	MOSFET 2 N-CH 30V 20A WISON-8	Cut Tape (CT)	OptiMOS	-55°C ~ 150°C (TJ)	8-PowerVDFN	PG-WISON-8	17W	2 N-Channel (Dual)	Logic Level Gate，4.5V Drive	30V	18 mOhm @ 9A，10V	2V @ 250μA	2.6nC @ 4.5V	360pF @ 15V
	BSZ0909NDXTMA1	Infineon Technologies	5,451	3 days	-	MOSFET 2 N-CH 30V 20A WISON-8 MOQ: 1 MPQ: 1	MOSFET 2 N-CH 30V 20A WISON-8	-	OptiMOS	-55°C ~ 150°C (TJ)	8-PowerVDFN	PG-WISON-8	17W	2 N-Channel (Dual)	Logic Level Gate，4.5V Drive	30V	18 mOhm @ 9A，10V	2V @ 250μA	2.6nC @ 4.5V	360pF @ 15V
	TSM200N03DPQ33 RGG	Taiwan Semiconductor Corporation	Inquiry	-	-	MOSFET 2 N-CH 30V 20A 8PDFN MOQ: 1 MPQ: 1	MOSFET 2 N-CH 30V 20A 8PDFN	Tape & Reel (TR)	-	-55°C ~ 150°C (TJ)	8-PowerWDFN	8-PDFN (3x3)	20W	2 N-Channel (Dual)	Standard	30V	20 mOhm @ 10A，10V	2.5V @ 250μA	4nC @ 4.5V	345pF @ 25V
	TSM200N03DPQ33 RGG	Taiwan Semiconductor Corporation	4,980	3 days	-	MOSFET 2 N-CH 30V 20A 8PDFN MOQ: 1 MPQ: 1	MOSFET 2 N-CH 30V 20A 8PDFN	Cut Tape (CT)	-	-55°C ~ 150°C (TJ)	8-PowerWDFN	8-PDFN (3x3)	20W	2 N-Channel (Dual)	Standard	30V	20 mOhm @ 10A，10V	2.5V @ 250μA	4nC @ 4.5V	345pF @ 25V
	TSM200N03DPQ33 RGG	Taiwan Semiconductor Corporation	4,980	3 days	-	MOSFET 2 N-CH 30V 20A 8PDFN MOQ: 1 MPQ: 1	MOSFET 2 N-CH 30V 20A 8PDFN	-	-	-55°C ~ 150°C (TJ)	8-PowerWDFN	8-PDFN (3x3)	20W	2 N-Channel (Dual)	Standard	30V	20 mOhm @ 10A，10V	2.5V @ 250μA	4nC @ 4.5V	345pF @ 25V
	SQJ958EP-T1_GE3	Vishay Siliconix	Inquiry	-	-	MOSFET 2 N-CH 60V POWERPAK SO8 MOQ: 1 MPQ: 1	MOSFET 2 N-CH 60V POWERPAK SO8	Tape & Reel (TR)	Automotive，AEC-Q101，TrenchFET	-55°C ~ 175°C (TJ)	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual	35W	2 N-Channel (Dual)	Standard	60V	34.9 mOhm @ 4.5A，10V	2.5V @ 250μA	23nC @ 10V	1075pF @ 30V
	DMN3012LFG-13	Diodes Incorporated	Inquiry	-	-	MOSFET 2 N-CH 30V POWERDI3333 MOQ: 1 MPQ: 1	MOSFET 2 N-CH 30V POWERDI3333	-	-	-55°C ~ 150°C (TJ)	8-PowerLDFN	PowerDI3333-8	2.2W	2 N-Channel	Standard	30V	12 mOhm @ 15A，5V，6 mOhm @ 15A，5V	2.1V @ 250μA，1.15V @ 250μA	6.1nC @ 4.5V，12.6nC @ 4.5V	850pF @ 15V，1480pF @ 15V
	FDWS9420-F085	ON Semiconductor	Inquiry	-	-	MOSFET 2 N-CH 40V 20A 8-PQFN MOQ: 1 MPQ: 1	MOSFET 2 N-CH 40V 20A 8-PQFN	Tape & Reel (TR)	-	-55°C ~ 175°C (TJ)	8-PowerTDFN	8-PQFN (5x6)	75W	2 N-Channel (Dual)	Standard	40V	5.8 mOhm @ 20A，10V	4V @ 250μA	43nC @ 10V	2100pF @ 20V
	DMN3012LFG-7	Diodes Incorporated	Inquiry	-	-	MOSFET 2 N-CH 30V POWERDI3333 MOQ: 1 MPQ: 1	MOSFET 2 N-CH 30V POWERDI3333	-	-	-55°C ~ 150°C (TJ)	8-PowerLDFN	PowerDI3333-8	2.2W	2 N-Channel	Standard	30V	12 mOhm @ 15A，5V，6 mOhm @ 15A，5V	2.1V @ 250μA，1.15V @ 250μA	6.1nC @ 4.5V，12.6nC @ 4.5V	850pF @ 15V，1480pF @ 15V

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