FETs, MOSFETs - Arrays - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Package / Case：

Supplier Device Package：

Power - Max：

FET Type：

FET Feature：

Drain to Source Voltage (Vdss)：

Rds On (Max) @ Id，Vgs：

Vgs(th) (Max) @ Id：

Gate Charge (Qg) (Max) @ Vgs：

Input Capacitance (Ciss) (Max) @ Vds：

Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Package / Case	Supplier Device Package	Power - Max	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Package / Case	Supplier Device Package	Power - Max	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
	FDMD85100	ON Semiconductor	Inquiry	-	-	MOSFET 2N-CH 100V MOQ: 1 MPQ: 1	MOSFET 2N-CH 100V	Tape & Reel (TR)	PowerTrench	8-PowerWDFN	8-Power 5x6	2.2W	2 N-Channel (Half Bridge)	Standard	100V	9.9 mOhm @ 10.4A，10V	4V @ 250μA	31nC @ 10V	2230pF @ 50V
	FDMD85100	ON Semiconductor	2,845	3 days	-	MOSFET 2N-CH 100V MOQ: 1 MPQ: 1	MOSFET 2N-CH 100V	Cut Tape (CT)	PowerTrench	8-PowerWDFN	8-Power 5x6	2.2W	2 N-Channel (Half Bridge)	Standard	100V	9.9 mOhm @ 10.4A，10V	4V @ 250μA	31nC @ 10V	2230pF @ 50V
	FDMD85100	ON Semiconductor	2,845	3 days	-	MOSFET 2N-CH 100V MOQ: 1 MPQ: 1	MOSFET 2N-CH 100V	-	PowerTrench	8-PowerWDFN	8-Power 5x6	2.2W	2 N-Channel (Half Bridge)	Standard	100V	9.9 mOhm @ 10.4A，10V	4V @ 250μA	31nC @ 10V	2230pF @ 50V
	PHKD13N03LT,518	Nexperia USA Inc.	Inquiry	-	-	MOSFET 2N-CH 30V 10.4A 8SOIC MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 10.4A 8SOIC	Tape & Reel (TR)	TrenchMOS	8-SOIC (0.154"，3.90mm Width)	8-SO	3.57W	2 N-Channel (Dual)	Logic Level Gate	30V	20 mOhm @ 8A，10V	2V @ 250μA	10.7nC @ 5V	752pF @ 15V
	PMWD20XN,118	NXP USA Inc.	Inquiry	-	-	MOSFET 2N-CH 20V 10.4A 8TSSOP MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 10.4A 8TSSOP	Tape & Reel (TR)	TrenchMOS	8-TSSOP (0.173"，4.40mm Width)	8-TSSOP	4.2W	2 N-Channel (Dual)	Logic Level Gate	20V	22 mOhm @ 4.2A，10V	1.5V @ 1mA	11.6nC @ 4.5V	740pF @ 16V
	PMWD20XN,118	NXP USA Inc.	Inquiry	-	-	MOSFET 2N-CH 20V 10.4A 8TSSOP MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 10.4A 8TSSOP	Cut Tape (CT)	TrenchMOS	8-TSSOP (0.173"，4.40mm Width)	8-TSSOP	4.2W	2 N-Channel (Dual)	Logic Level Gate	20V	22 mOhm @ 4.2A，10V	1.5V @ 1mA	11.6nC @ 4.5V	740pF @ 16V
	PMWD20XN,118	NXP USA Inc.	Inquiry	-	-	MOSFET 2N-CH 20V 10.4A 8TSSOP MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 10.4A 8TSSOP	-	TrenchMOS	8-TSSOP (0.173"，4.40mm Width)	8-TSSOP	4.2W	2 N-Channel (Dual)	Logic Level Gate	20V	22 mOhm @ 4.2A，10V	1.5V @ 1mA	11.6nC @ 4.5V	740pF @ 16V
	PHKD13N03LT,118	Nexperia USA Inc.	Inquiry	-	-	MOSFET 2N-CH 30V 10.4A 8SOIC MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 10.4A 8SOIC	Tape & Reel (TR)	TrenchMOS	8-SOIC (0.154"，3.90mm Width)	8-SO	3.57W	2 N-Channel (Dual)	Logic Level Gate	30V	20 mOhm @ 8A，10V	2V @ 250μA	10.7nC @ 5V	752pF @ 15V

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