Supplier Device Package:
Power - Max:
Drain to Source Voltage (Vdss):
Rds On (Max) @ Id,Vgs:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 6 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Package / Case Supplier Device Package Power - Max FET Type Drain to Source Voltage (Vdss) Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
FDW2520C
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 6A/4.4A 8TSSOP
Tape & Reel (TR) PowerTrench 8-TSSOP (0.173",4.40mm Width) 8-TSSOP 600mW N and P-Channel 20V 18 mOhm @ 6A,4.5V 1.5V @ 250μA 20nC @ 4.5V 1325pF @ 10V
FDW2520C
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 6A/4.4A 8TSSOP
Cut Tape (CT) PowerTrench 8-TSSOP (0.173",4.40mm Width) 8-TSSOP 600mW N and P-Channel 20V 18 mOhm @ 6A,4.5V 1.5V @ 250μA 20nC @ 4.5V 1325pF @ 10V
FDW2520C
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 6A/4.4A 8TSSOP
- PowerTrench 8-TSSOP (0.173",4.40mm Width) 8-TSSOP 600mW N and P-Channel 20V 18 mOhm @ 6A,4.5V 1.5V @ 250μA 20nC @ 4.5V 1325pF @ 10V
SI4974DY-T1-E3
Vishay Siliconix
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 6A 8-SOIC
Tape & Reel (TR) TrenchFET 8-SOIC (0.154",3.90mm Width) 8-SO 1.1W 2 N-Channel (Dual) 30V 19 mOhm @ 8A,10V 3V @ 250μA 11nC @ 4.5V -
SI4974DY-T1-E3
Vishay Siliconix
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 6A 8-SOIC
Cut Tape (CT) TrenchFET 8-SOIC (0.154",3.90mm Width) 8-SO 1.1W 2 N-Channel (Dual) 30V 19 mOhm @ 8A,10V 3V @ 250μA 11nC @ 4.5V -
SI4974DY-T1-E3
Vishay Siliconix
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 6A 8-SOIC
- TrenchFET 8-SOIC (0.154",3.90mm Width) 8-SO 1.1W 2 N-Channel (Dual) 30V 19 mOhm @ 8A,10V 3V @ 250μA 11nC @ 4.5V -