- Package / Case：
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- FET Feature：
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- Rds On (Max) @ Id，Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Selected conditions:
Discover 2 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Microsemi Corporation |
Inquiry
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MOQ: 1 MPQ: 1
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POWER MODULE - SIC
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Bulk | SP1 | SP1 | 470W | 2 N-Channel (Dual)，Schottky | Silicon Carbide (SiC) | 50 mOhm @ 40A，20V | 3V @ 2mA | 272nC @ 20V | 5120pF @ 1000V | |||
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Microsemi Corporation |
Inquiry
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MOQ: 1 MPQ: 1
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POWER MODULE - SIC MOSFET
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- | Module | SP3 | 375W | 6 N-Channel (3-Phase Bridge) | Standard | 34 mOhm @ 50A，20V | 4V @ 15mA | 161nC @ 5V | 2788pF @ 1000V |
