Supplier Device Package:
Power - Max:
Drain to Source Voltage (Vdss):
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 6 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Package / Case Supplier Device Package Power - Max Drain to Source Voltage (Vdss) Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
DMN63D8LV-7
Diodes Incorporated
63,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 0.26A SOT563
Tape & Reel (TR) SOT-563,SOT-666 SOT-563 450mW 30V 2.8 Ohm @ 250mA,10V 1.5V @ 250μA 0.87nC @ 10V 22pF @ 25V
DMN63D8LV-7
Diodes Incorporated
73,169
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 0.26A SOT563
Cut Tape (CT) SOT-563,SOT-666 SOT-563 450mW 30V 2.8 Ohm @ 250mA,10V 1.5V @ 250μA 0.87nC @ 10V 22pF @ 25V
DMN63D8LV-7
Diodes Incorporated
73,169
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 0.26A SOT563
- SOT-563,SOT-666 SOT-563 450mW 30V 2.8 Ohm @ 250mA,10V 1.5V @ 250μA 0.87nC @ 10V 22pF @ 25V
NX7002BKXBZ
Nexperia USA Inc.
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 0.26A 6DFN
Tape & Reel (TR) 6-XFDFN Exposed Pad 6-DFN (1.1x1) 285mW 60V 2.8 Ohm @ 200mA,10V 2.1V @ 250μA 1nC @ 10V 23.6pF @ 10V
NX7002BKXBZ
Nexperia USA Inc.
4,927
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 0.26A 6DFN
Cut Tape (CT) 6-XFDFN Exposed Pad 6-DFN (1.1x1) 285mW 60V 2.8 Ohm @ 200mA,10V 2.1V @ 250μA 1nC @ 10V 23.6pF @ 10V
NX7002BKXBZ
Nexperia USA Inc.
4,927
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 0.26A 6DFN
- 6-XFDFN Exposed Pad 6-DFN (1.1x1) 285mW 60V 2.8 Ohm @ 200mA,10V 2.1V @ 250μA 1nC @ 10V 23.6pF @ 10V