Discover 21 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
SI7949DP-T1-E3
Vishay Siliconix
15,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 3.2A PPAK SO-8
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SO-8 Dual PowerPAK? SO-8 Dual 1.5W 2 P-Channel (Dual) Logic Level Gate 60V 64 mOhm @ 5A,10V 3V @ 250μA 40nC @ 10V -
SI7949DP-T1-E3
Vishay Siliconix
16,938
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 3.2A PPAK SO-8
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SO-8 Dual PowerPAK? SO-8 Dual 1.5W 2 P-Channel (Dual) Logic Level Gate 60V 64 mOhm @ 5A,10V 3V @ 250μA 40nC @ 10V -
SI7949DP-T1-E3
Vishay Siliconix
16,938
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 3.2A PPAK SO-8
- TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SO-8 Dual PowerPAK? SO-8 Dual 1.5W 2 P-Channel (Dual) Logic Level Gate 60V 64 mOhm @ 5A,10V 3V @ 250μA 40nC @ 10V -
SI7949DP-T1-GE3
Vishay Siliconix
6,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 3.2A PPAK SO-8
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SO-8 Dual PowerPAK? SO-8 Dual 1.5W 2 P-Channel (Dual) Logic Level Gate 60V 64 mOhm @ 5A,10V 3V @ 250μA 40nC @ 10V -
SI7949DP-T1-GE3
Vishay Siliconix
7,613
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 3.2A PPAK SO-8
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SO-8 Dual PowerPAK? SO-8 Dual 1.5W 2 P-Channel (Dual) Logic Level Gate 60V 64 mOhm @ 5A,10V 3V @ 250μA 40nC @ 10V -
SI7949DP-T1-GE3
Vishay Siliconix
7,613
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 3.2A PPAK SO-8
- TrenchFET -55°C ~ 150°C (TJ) PowerPAK? SO-8 Dual PowerPAK? SO-8 Dual 1.5W 2 P-Channel (Dual) Logic Level Gate 60V 64 mOhm @ 5A,10V 3V @ 250μA 40nC @ 10V -
BSC750N10NDGATMA1
Infineon Technologies
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 100V 3.2A 8TDSON
Tape & Reel (TR) OptiMOS -55°C ~ 150°C (TJ) 8-PowerVDFN PG-TDSON-8 26W 2 N-Channel (Dual) Standard 100V 75 mOhm @ 13A,10V 4V @ 12μA 11nC @ 10V 720pF @ 50V
BSC750N10NDGATMA1
Infineon Technologies
2,338
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 100V 3.2A 8TDSON
Cut Tape (CT) OptiMOS -55°C ~ 150°C (TJ) 8-PowerVDFN PG-TDSON-8 26W 2 N-Channel (Dual) Standard 100V 75 mOhm @ 13A,10V 4V @ 12μA 11nC @ 10V 720pF @ 50V
BSC750N10NDGATMA1
Infineon Technologies
2,338
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 100V 3.2A 8TDSON
- OptiMOS -55°C ~ 150°C (TJ) 8-PowerVDFN PG-TDSON-8 26W 2 N-Channel (Dual) Standard 100V 75 mOhm @ 13A,10V 4V @ 12μA 11nC @ 10V 720pF @ 50V
DMP2060UFDB-7
Diodes Incorporated
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 3.2A 6UDFN
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 6-UDFN Exposed Pad U-DFN2020-6 (Type B) 1.4W 2 P-Channel (Dual) Standard 20V 90 mOhm @ 2.9A,4.5V 1.4V @ 250μA 18nC @ 8V 881pF @ 10V
DMP2060UFDB-7
Diodes Incorporated
76
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 3.2A 6UDFN
Cut Tape (CT) - -55°C ~ 150°C (TJ) 6-UDFN Exposed Pad U-DFN2020-6 (Type B) 1.4W 2 P-Channel (Dual) Standard 20V 90 mOhm @ 2.9A,4.5V 1.4V @ 250μA 18nC @ 8V 881pF @ 10V
DMP2060UFDB-7
Diodes Incorporated
76
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 3.2A 6UDFN
- - -55°C ~ 150°C (TJ) 6-UDFN Exposed Pad U-DFN2020-6 (Type B) 1.4W 2 P-Channel (Dual) Standard 20V 90 mOhm @ 2.9A,4.5V 1.4V @ 250μA 18nC @ 8V 881pF @ 10V
DMP2060UFDB-13
Diodes Incorporated
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 3.2A 6UDFN
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 6-UDFN Exposed Pad U-DFN2020-6 (Type B) 1.4W 2 P-Channel (Dual) Standard 20V 90 mOhm @ 2.9A,4.5V 1.4V @ 250μA 18nC @ 8V 881pF @ 10V
NDS9933
ON Semiconductor
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 3.2A 8-SOIC
Tape & Reel (TR) - - 8-SOIC (0.154",3.90mm Width) 8-SO 900mW 2 P-Channel (Dual) Logic Level Gate 20V 110 mOhm @ 3.2A,4.5V 1V @ 250μA 20nC @ 4.5V 870pF @ 10V
NDS9933
ON Semiconductor
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 3.2A 8-SOIC
Cut Tape (CT) - - 8-SOIC (0.154",3.90mm Width) 8-SO 900mW 2 P-Channel (Dual) Logic Level Gate 20V 110 mOhm @ 3.2A,4.5V 1V @ 250μA 20nC @ 4.5V 870pF @ 10V
FDJ1028N
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 3.2A SC-75
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) SC75-6 FLMP SC75-6 FLMP 1.5W 2 N-Channel (Dual) Logic Level Gate 20V 90 mOhm @ 3.2A,4.5V 1.5V @ 250μA 3nC @ 4.5V 200pF @ 10V
FDMJ1028N
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 3.2A 6-MICROFET
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 6-WFDFN Exposed Pad 6-MicroFET (2x2) 800mW 2 N-Channel (Dual) Logic Level Gate 20V 90 mOhm @ 3.2A,4.5V 1.5V @ 250μA 3nC @ 4.5V 200pF @ 10V
TPCF8304(TE85L,F,M
Toshiba Semiconductor and Storage
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 3.2A VS-8
Tape & Reel (TR) - 150°C (TJ) 8-SMD,Flat Lead VS-8 (2.9x1.5) 330mW 2 P-Channel (Dual) Logic Level Gate 30V 72 mOhm @ 1.6A,10V 1.2V @ 1mA 14nC @ 10V 600pF @ 10V
FDR8308P
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 3.2A SSOT-8
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 8-SMD,Gull Wing SuperSOT?-8 800mW 2 P-Channel (Dual) Logic Level Gate 20V 50 mOhm @ 3.2A,4.5V 1.5V @ 250μA 19nC @ 4.5V 1240pF @ 10V
FDR8308P
ON Semiconductor
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 3.2A SSOT-8
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) 8-SMD,Gull Wing SuperSOT?-8 800mW 2 P-Channel (Dual) Logic Level Gate 20V 50 mOhm @ 3.2A,4.5V 1.5V @ 250μA 19nC @ 4.5V 1240pF @ 10V