Discover 29 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
ZXMP6A17DN8TA
Diodes Incorporated
2,500
3 days
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 2.7A 8-SOIC
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOP 1.81W 2 P-Channel (Dual) Logic Level Gate 60V 125 mOhm @ 2.3A,10V 1V @ 250μA (Min) 17.7nC @ 10V 637pF @ 30V
ZXMP6A17DN8TA
Diodes Incorporated
3,215
3 days
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 2.7A 8-SOIC
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.81W 2 P-Channel (Dual) Logic Level Gate 60V 125 mOhm @ 2.3A,10V 1V @ 250μA (Min) 17.7nC @ 10V 637pF @ 30V
ZXMP6A17DN8TA
Diodes Incorporated
3,215
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 2.7A 8-SOIC
- - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.81W 2 P-Channel (Dual) Logic Level Gate 60V 125 mOhm @ 2.3A,10V 1V @ 250μA (Min) 17.7nC @ 10V 637pF @ 30V
FDS89161
ON Semiconductor
2,500
3 days
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 100V 2.7A 8-SOIC
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.6W 2 N-Channel (Dual) Standard 100V 105 mOhm @ 2.7A,10V 4V @ 250μA 4.1nC @ 10V 210pF @ 50V
FDS89161
ON Semiconductor
3,363
3 days
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 100V 2.7A 8-SOIC
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.6W 2 N-Channel (Dual) Standard 100V 105 mOhm @ 2.7A,10V 4V @ 250μA 4.1nC @ 10V 210pF @ 50V
FDS89161
ON Semiconductor
3,363
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 100V 2.7A 8-SOIC
- PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.6W 2 N-Channel (Dual) Standard 100V 105 mOhm @ 2.7A,10V 4V @ 250μA 4.1nC @ 10V 210pF @ 50V
FDS89161LZ
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 100V 2.7A 8SOIC
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.6W 2 N-Channel (Dual) Standard 100V 105 mOhm @ 2.7A,10V 2.2V @ 250μA 5.3nC @ 10V 302pF @ 50V
FDS89161LZ
ON Semiconductor
129
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 100V 2.7A 8SOIC
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.6W 2 N-Channel (Dual) Standard 100V 105 mOhm @ 2.7A,10V 2.2V @ 250μA 5.3nC @ 10V 302pF @ 50V
FDS89161LZ
ON Semiconductor
129
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 100V 2.7A 8SOIC
- PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.6W 2 N-Channel (Dual) Standard 100V 105 mOhm @ 2.7A,10V 2.2V @ 250μA 5.3nC @ 10V 302pF @ 50V
FDC6305N
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 2.7A SSOT6
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 SuperSOT?-6 700mW 2 N-Channel (Dual) Standard 20V 80 mOhm @ 2.7A,4.5V 1.5V @ 250μA 5nC @ 4.5V 310pF @ 10V
FDC6305N
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 2.7A SSOT6
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 SuperSOT?-6 700mW 2 N-Channel (Dual) Standard 20V 80 mOhm @ 2.7A,4.5V 1.5V @ 250μA 5nC @ 4.5V 310pF @ 10V
FDC6305N
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 2.7A SSOT6
- PowerTrench -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 SuperSOT?-6 700mW 2 N-Channel (Dual) Standard 20V 80 mOhm @ 2.7A,4.5V 1.5V @ 250μA 5nC @ 4.5V 310pF @ 10V
PMDPB80XP,115
Nexperia USA Inc.
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 2.7A HUSON6
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 6-UDFN Exposed Pad DFN2020-6 485mW 2 P-Channel (Dual) Logic Level Gate,1.8V Drive 20V 102 mOhm @ 2.7A,4.5V 1V @ 250μA 8.6nC @ 4.5V 550pF @ 10V
PMDPB80XP,115
Nexperia USA Inc.
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 2.7A HUSON6
Cut Tape (CT) - -55°C ~ 150°C (TJ) 6-UDFN Exposed Pad DFN2020-6 485mW 2 P-Channel (Dual) Logic Level Gate,1.8V Drive 20V 102 mOhm @ 2.7A,4.5V 1V @ 250μA 8.6nC @ 4.5V 550pF @ 10V
PMDPB80XP,115
Nexperia USA Inc.
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 2.7A HUSON6
- - -55°C ~ 150°C (TJ) 6-UDFN Exposed Pad DFN2020-6 485mW 2 P-Channel (Dual) Logic Level Gate,1.8V Drive 20V 102 mOhm @ 2.7A,4.5V 1V @ 250μA 8.6nC @ 4.5V 550pF @ 10V
SI3951DV-T1-GE3
Vishay Siliconix
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 2.7A 6-TSOP
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 6-TSOP 2W 2 P-Channel (Dual) Logic Level Gate 20V 115 mOhm @ 2.5A,4.5V 1.5V @ 250μA 5.1nC @ 5V 250pF @ 10V
IRF5852
Infineon Technologies
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 2.7A 6-TSOP
Tube HEXFET - SOT-23-6 Thin,TSOT-23-6 6-TSOP 960mW 2 N-Channel (Dual) Logic Level Gate 20V 90 mOhm @ 2.7A,4.5V 1.25V @ 250μA 6nC @ 4.5V 400pF @ 15V
IRF5852TR
Infineon Technologies
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 2.7A 6-TSOP
Tape & Reel (TR) HEXFET -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 6-TSOP 960mW 2 N-Channel (Dual) Logic Level Gate 20V 90 mOhm @ 2.7A,4.5V 1.25V @ 250μA 6nC @ 4.5V 400pF @ 15V
SI3951DV-T1-E3
Vishay Siliconix
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 2.7A 6-TSOP
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 6-TSOP 2W 2 P-Channel (Dual) Logic Level Gate 20V 115 mOhm @ 2.5A,4.5V 1.5V @ 250μA 5.1nC @ 5V 250pF @ 10V
SI3951DV-T1-E3
Vishay Siliconix
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 2.7A 6-TSOP
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 6-TSOP 2W 2 P-Channel (Dual) Logic Level Gate 20V 115 mOhm @ 2.5A,4.5V 1.5V @ 250μA 5.1nC @ 5V 250pF @ 10V