Drain to Source Voltage (Vdss):
Discover 41 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
FDS6930B
ON Semiconductor
5,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.5A 8SOIC
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 900mW 2 N-Channel (Dual) Logic Level Gate 30V 38 mOhm @ 5.5A,10V 3V @ 250μA 3.8nC @ 5V 412pF @ 15V
FDS6930B
ON Semiconductor
7,420
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.5A 8SOIC
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 900mW 2 N-Channel (Dual) Logic Level Gate 30V 38 mOhm @ 5.5A,10V 3V @ 250μA 3.8nC @ 5V 412pF @ 15V
FDS6930B
ON Semiconductor
7,420
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.5A 8SOIC
- PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 900mW 2 N-Channel (Dual) Logic Level Gate 30V 38 mOhm @ 5.5A,10V 3V @ 250μA 3.8nC @ 5V 412pF @ 15V
ZXMN3G32DN8TA
Diodes Incorporated
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.5A 8SOIC
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.8W 2 N-Channel (Dual) Logic Level Gate 30V 28 mOhm @ 6A,10V 3V @ 250μA 10.5nC @ 10V 472pF @ 15V
ZXMN3G32DN8TA
Diodes Incorporated
3,414
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.5A 8SOIC
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.8W 2 N-Channel (Dual) Logic Level Gate 30V 28 mOhm @ 6A,10V 3V @ 250μA 10.5nC @ 10V 472pF @ 15V
ZXMN3G32DN8TA
Diodes Incorporated
3,414
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.5A 8SOIC
- - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.8W 2 N-Channel (Dual) Logic Level Gate 30V 28 mOhm @ 6A,10V 3V @ 250μA 10.5nC @ 10V 472pF @ 15V
DMN3035LWN-7
Diodes Incorporated
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.5A 8VDFN
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-PowerVDFN V-DFN3020-8 770mW 2 N-Channel (Dual) Standard 30V 35 mOhm @ 4.8A,10V 2V @ 250μA 9.9nC @ 10V 399pF @ 15V
DMN3035LWN-7
Diodes Incorporated
1,918
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.5A 8VDFN
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-PowerVDFN V-DFN3020-8 770mW 2 N-Channel (Dual) Standard 30V 35 mOhm @ 4.8A,10V 2V @ 250μA 9.9nC @ 10V 399pF @ 15V
DMN3035LWN-7
Diodes Incorporated
1,918
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.5A 8VDFN
- - -55°C ~ 150°C (TJ) 8-PowerVDFN V-DFN3020-8 770mW 2 N-Channel (Dual) Standard 30V 35 mOhm @ 4.8A,10V 2V @ 250μA 9.9nC @ 10V 399pF @ 15V
QS8J13TR
ROHM Semiconductor
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 12V 5.5A TSMT8
Tape & Reel (TR) - 150°C (TJ) 8-SMD,Flat Lead TSMT8 1.25W 2 P-Channel (Dual) Logic Level Gate 12V 22 mOhm @ 5.5A,4.5V 1V @ 1mA 60nC @ 4.5V 6300pF @ 6V
QS8J13TR
ROHM Semiconductor
1,290
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 12V 5.5A TSMT8
Cut Tape (CT) - 150°C (TJ) 8-SMD,Flat Lead TSMT8 1.25W 2 P-Channel (Dual) Logic Level Gate 12V 22 mOhm @ 5.5A,4.5V 1V @ 1mA 60nC @ 4.5V 6300pF @ 6V
QS8J13TR
ROHM Semiconductor
1,290
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 12V 5.5A TSMT8
- - 150°C (TJ) 8-SMD,Flat Lead TSMT8 1.25W 2 P-Channel (Dual) Logic Level Gate 12V 22 mOhm @ 5.5A,4.5V 1V @ 1mA 60nC @ 4.5V 6300pF @ 6V
FDS6930A
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.5A 8SOIC
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 900mW 2 N-Channel (Dual) Logic Level Gate 30V 40 mOhm @ 5.5A,10V 3V @ 250μA 7nC @ 5V 460pF @ 15V
FDS6930A
ON Semiconductor
1,831
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.5A 8SOIC
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 900mW 2 N-Channel (Dual) Logic Level Gate 30V 40 mOhm @ 5.5A,10V 3V @ 250μA 7nC @ 5V 460pF @ 15V
FDS6930A
ON Semiconductor
1,831
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.5A 8SOIC
- PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 900mW 2 N-Channel (Dual) Logic Level Gate 30V 40 mOhm @ 5.5A,10V 3V @ 250μA 7nC @ 5V 460pF @ 15V
ZXMN3G32DN8TA
Diodes Incorporated
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.5A 8SOIC
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOP 1.8W 2 N-Channel (Dual) Logic Level Gate 30V 28 mOhm @ 6A,10V 3V @ 250μA 10.5nC @ 10V 472pF @ 15V
ZXMN3G32DN8TA
Diodes Incorporated
940
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.5A 8SOIC
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.8W 2 N-Channel (Dual) Logic Level Gate 30V 28 mOhm @ 6A,10V 3V @ 250μA 10.5nC @ 10V 472pF @ 15V
ZXMN3G32DN8TA
Diodes Incorporated
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.5A 8SOIC
- - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 1.8W 2 N-Channel (Dual) Logic Level Gate 30V 28 mOhm @ 6A,10V 3V @ 250μA 10.5nC @ 10V 472pF @ 15V
NDS8926
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET DUAL N-CH 20V 8-SO
Tape & Reel (TR) - - 8-SOIC (0.154",3.90mm Width) 8-SO 900mW 2 N-Channel (Dual) Logic Level Gate 20V 35 mOhm @ 5.5A,4.5V 1V @ 250μA 30nC @ 4.5V 760pF @ 10V
NDS8926
ON Semiconductor
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET DUAL N-CH 20V 8-SO
Cut Tape (CT) - - 8-SOIC (0.154",3.90mm Width) 8-SO 900mW 2 N-Channel (Dual) Logic Level Gate 20V 35 mOhm @ 5.5A,4.5V 1V @ 250μA 30nC @ 4.5V 760pF @ 10V