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- Operating Temperature:
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- Supplier Device Package:
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- Power - Max:
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Discover 53 products
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id,Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | ||
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id,Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | ||
ON Semiconductor |
7,500
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 60V 2.3A 8-SOIC
|
Tape & Reel (TR) | PowerTrench | -55°C ~ 175°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | 900mW | 2 P-Channel (Dual) | Logic Level Gate | 60V | 250 mOhm @ 2.3A,10V | 3V @ 250μA | 13nC @ 10V | 394pF @ 30V | ||||
ON Semiconductor |
8,268
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 60V 2.3A 8-SOIC
|
Cut Tape (CT) | PowerTrench | -55°C ~ 175°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | 900mW | 2 P-Channel (Dual) | Logic Level Gate | 60V | 250 mOhm @ 2.3A,10V | 3V @ 250μA | 13nC @ 10V | 394pF @ 30V | ||||
ON Semiconductor |
8,268
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 60V 2.3A 8-SOIC
|
- | PowerTrench | -55°C ~ 175°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | 900mW | 2 P-Channel (Dual) | Logic Level Gate | 60V | 250 mOhm @ 2.3A,10V | 3V @ 250μA | 13nC @ 10V | 394pF @ 30V | ||||
Infineon Technologies |
4,000
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 2.3A 8-SOIC
|
Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 250 mOhm @ 1A,10V | 3V @ 250μA | 25nC @ 10V | 290pF @ 15V | ||||
Infineon Technologies |
4,694
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 2.3A 8-SOIC
|
Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 250 mOhm @ 1A,10V | 3V @ 250μA | 25nC @ 10V | 290pF @ 15V | ||||
Infineon Technologies |
4,694
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 2.3A 8-SOIC
|
- | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 250 mOhm @ 1A,10V | 3V @ 250μA | 25nC @ 10V | 290pF @ 15V | ||||
Nexperia USA Inc. |
2,500
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 30V 2.3A 8SOIC
|
Tape & Reel (TR) | - | 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 30V | 250 mOhm @ 1A,10V | 2.8V @ 1mA | 25nC @ 10V | 250pF @ 20V | ||||
Nexperia USA Inc. |
4,794
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 30V 2.3A 8SOIC
|
Cut Tape (CT) | - | 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 30V | 250 mOhm @ 1A,10V | 2.8V @ 1mA | 25nC @ 10V | 250pF @ 20V | ||||
Nexperia USA Inc. |
4,794
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 30V 2.3A 8SOIC
|
- | - | 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Logic Level Gate | 30V | 250 mOhm @ 1A,10V | 2.8V @ 1mA | 25nC @ 10V | 250pF @ 20V | ||||
Diodes Incorporated |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 2.3A 8-MSOP
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | 8-MSOP | 1.04W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 135 mOhm @ 1.7A,10V | 1V @ 250μA (Min) | 8nC @ 10V | 290pF @ 25V | ||||
Diodes Incorporated |
1,312
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 2.3A 8-MSOP
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | 8-MSOP | 1.04W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 135 mOhm @ 1.7A,10V | 1V @ 250μA (Min) | 8nC @ 10V | 290pF @ 25V | ||||
Diodes Incorporated |
1,312
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 2.3A 8-MSOP
|
- | - | -55°C ~ 150°C (TJ) | 8-TSSOP,8-MSOP (0.118",3.00mm Width) | 8-MSOP | 1.04W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 135 mOhm @ 1.7A,10V | 1V @ 250μA (Min) | 8nC @ 10V | 290pF @ 25V | ||||
Infineon Technologies |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 2.3A 6TSOP
|
Tape & Reel (TR) | Automotive,AEC-Q101,OptiMOS | -55°C ~ 150°C (TJ) | SOT-23-6 Thin,TSOT-23-6 | PG-TSOP6-6 | 500mW | 2 N-Channel (Dual) | Logic Level Gate,4.5V Drive | 30V | 57 mOhm @ 2.3A,10V | 2V @ 11μA | 1.6nC @ 5V | 275pF @ 15V | ||||
Infineon Technologies |
2,377
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 2.3A 6TSOP
|
Cut Tape (CT) | Automotive,AEC-Q101,OptiMOS | -55°C ~ 150°C (TJ) | SOT-23-6 Thin,TSOT-23-6 | PG-TSOP6-6 | 500mW | 2 N-Channel (Dual) | Logic Level Gate,4.5V Drive | 30V | 57 mOhm @ 2.3A,10V | 2V @ 11μA | 1.6nC @ 5V | 275pF @ 15V | ||||
Infineon Technologies |
2,377
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 2.3A 6TSOP
|
- | Automotive,AEC-Q101,OptiMOS | -55°C ~ 150°C (TJ) | SOT-23-6 Thin,TSOT-23-6 | PG-TSOP6-6 | 500mW | 2 N-Channel (Dual) | Logic Level Gate,4.5V Drive | 30V | 57 mOhm @ 2.3A,10V | 2V @ 11μA | 1.6nC @ 5V | 275pF @ 15V | ||||
Infineon Technologies |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 30V 2.3A 8-SOIC
|
Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Standard | 30V | 250 mOhm @ 1A,10V | 1V @ 250μA | 12nC @ 10V | 190pF @ 15V | ||||
Infineon Technologies |
3,335
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 30V 2.3A 8-SOIC
|
Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Standard | 30V | 250 mOhm @ 1A,10V | 1V @ 250μA | 12nC @ 10V | 190pF @ 15V | ||||
Infineon Technologies |
3,335
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 30V 2.3A 8-SOIC
|
- | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | 2W | 2 P-Channel (Dual) | Standard | 30V | 250 mOhm @ 1A,10V | 1V @ 250μA | 12nC @ 10V | 190pF @ 15V | ||||
ON Semiconductor |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 2.3A SSOT-6
|
Tape & Reel (TR) | PowerTrench | -55°C ~ 150°C (TJ) | SOT-23-6 Thin,TSOT-23-6 | SuperSOT?-6 | 700mW | 2 P-Channel (Dual) | Logic Level Gate | 20V | 115 mOhm @ 2.3A,4.5V | 1.5V @ 250μA | 7nC @ 4.5V | 467pF @ 10V | ||||
ON Semiconductor |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 2.3A SSOT-6
|
Cut Tape (CT) | PowerTrench | -55°C ~ 150°C (TJ) | SOT-23-6 Thin,TSOT-23-6 | SuperSOT?-6 | 700mW | 2 P-Channel (Dual) | Logic Level Gate | 20V | 115 mOhm @ 2.3A,4.5V | 1.5V @ 250μA | 7nC @ 4.5V | 467pF @ 10V |