Drain to Source Voltage (Vdss):
Discover 53 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
NDS9948
ON Semiconductor
7,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 2.3A 8-SOIC
Tape & Reel (TR) PowerTrench -55°C ~ 175°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 900mW 2 P-Channel (Dual) Logic Level Gate 60V 250 mOhm @ 2.3A,10V 3V @ 250μA 13nC @ 10V 394pF @ 30V
NDS9948
ON Semiconductor
8,268
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 2.3A 8-SOIC
Cut Tape (CT) PowerTrench -55°C ~ 175°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 900mW 2 P-Channel (Dual) Logic Level Gate 60V 250 mOhm @ 2.3A,10V 3V @ 250μA 13nC @ 10V 394pF @ 30V
NDS9948
ON Semiconductor
8,268
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 2.3A 8-SOIC
- PowerTrench -55°C ~ 175°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 900mW 2 P-Channel (Dual) Logic Level Gate 60V 250 mOhm @ 2.3A,10V 3V @ 250μA 13nC @ 10V 394pF @ 30V
IRF7104TRPBF
Infineon Technologies
4,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 2.3A 8-SOIC
Tape & Reel (TR) HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 P-Channel (Dual) Logic Level Gate 20V 250 mOhm @ 1A,10V 3V @ 250μA 25nC @ 10V 290pF @ 15V
IRF7104TRPBF
Infineon Technologies
4,694
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 2.3A 8-SOIC
Cut Tape (CT) HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 P-Channel (Dual) Logic Level Gate 20V 250 mOhm @ 1A,10V 3V @ 250μA 25nC @ 10V 290pF @ 15V
IRF7104TRPBF
Infineon Technologies
4,694
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 2.3A 8-SOIC
- HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 P-Channel (Dual) Logic Level Gate 20V 250 mOhm @ 1A,10V 3V @ 250μA 25nC @ 10V 290pF @ 15V
PHP225,118
Nexperia USA Inc.
2,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 2.3A 8SOIC
Tape & Reel (TR) - 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 P-Channel (Dual) Logic Level Gate 30V 250 mOhm @ 1A,10V 2.8V @ 1mA 25nC @ 10V 250pF @ 20V
PHP225,118
Nexperia USA Inc.
4,794
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 2.3A 8SOIC
Cut Tape (CT) - 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 P-Channel (Dual) Logic Level Gate 30V 250 mOhm @ 1A,10V 2.8V @ 1mA 25nC @ 10V 250pF @ 20V
PHP225,118
Nexperia USA Inc.
4,794
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 2.3A 8SOIC
- - 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 P-Channel (Dual) Logic Level Gate 30V 250 mOhm @ 1A,10V 2.8V @ 1mA 25nC @ 10V 250pF @ 20V
ZXMD63N03XTA
Diodes Incorporated
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 2.3A 8-MSOP
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) 8-MSOP 1.04W 2 N-Channel (Dual) Logic Level Gate 30V 135 mOhm @ 1.7A,10V 1V @ 250μA (Min) 8nC @ 10V 290pF @ 25V
ZXMD63N03XTA
Diodes Incorporated
1,312
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 2.3A 8-MSOP
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) 8-MSOP 1.04W 2 N-Channel (Dual) Logic Level Gate 30V 135 mOhm @ 1.7A,10V 1V @ 250μA (Min) 8nC @ 10V 290pF @ 25V
ZXMD63N03XTA
Diodes Incorporated
1,312
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 2.3A 8-MSOP
- - -55°C ~ 150°C (TJ) 8-TSSOP,8-MSOP (0.118",3.00mm Width) 8-MSOP 1.04W 2 N-Channel (Dual) Logic Level Gate 30V 135 mOhm @ 1.7A,10V 1V @ 250μA (Min) 8nC @ 10V 290pF @ 25V
BSL306NH6327XTSA1
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 2.3A 6TSOP
Tape & Reel (TR) Automotive,AEC-Q101,OptiMOS -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 PG-TSOP6-6 500mW 2 N-Channel (Dual) Logic Level Gate,4.5V Drive 30V 57 mOhm @ 2.3A,10V 2V @ 11μA 1.6nC @ 5V 275pF @ 15V
BSL306NH6327XTSA1
Infineon Technologies
2,377
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 2.3A 6TSOP
Cut Tape (CT) Automotive,AEC-Q101,OptiMOS -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 PG-TSOP6-6 500mW 2 N-Channel (Dual) Logic Level Gate,4.5V Drive 30V 57 mOhm @ 2.3A,10V 2V @ 11μA 1.6nC @ 5V 275pF @ 15V
BSL306NH6327XTSA1
Infineon Technologies
2,377
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 2.3A 6TSOP
- Automotive,AEC-Q101,OptiMOS -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 PG-TSOP6-6 500mW 2 N-Channel (Dual) Logic Level Gate,4.5V Drive 30V 57 mOhm @ 2.3A,10V 2V @ 11μA 1.6nC @ 5V 275pF @ 15V
IRF9953TRPBF
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 2.3A 8-SOIC
Tape & Reel (TR) HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 P-Channel (Dual) Standard 30V 250 mOhm @ 1A,10V 1V @ 250μA 12nC @ 10V 190pF @ 15V
IRF9953TRPBF
Infineon Technologies
3,335
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 2.3A 8-SOIC
Cut Tape (CT) HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 P-Channel (Dual) Standard 30V 250 mOhm @ 1A,10V 1V @ 250μA 12nC @ 10V 190pF @ 15V
IRF9953TRPBF
Infineon Technologies
3,335
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 2.3A 8-SOIC
- HEXFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2W 2 P-Channel (Dual) Standard 30V 250 mOhm @ 1A,10V 1V @ 250μA 12nC @ 10V 190pF @ 15V
FDC6312P
ON Semiconductor
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 2.3A SSOT-6
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 SuperSOT?-6 700mW 2 P-Channel (Dual) Logic Level Gate 20V 115 mOhm @ 2.3A,4.5V 1.5V @ 250μA 7nC @ 4.5V 467pF @ 10V
FDC6312P
ON Semiconductor
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 2.3A SSOT-6
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 SuperSOT?-6 700mW 2 P-Channel (Dual) Logic Level Gate 20V 115 mOhm @ 2.3A,4.5V 1.5V @ 250μA 7nC @ 4.5V 467pF @ 10V