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Discover 65 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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ON Semiconductor |
18,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 2.9A MICROFET6
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Tape & Reel (TR) | PowerTrench | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 700mW | 2 P-Channel (Dual) | Logic Level Gate | 30V | 90 mOhm @ 2.9A，4.5V | 1V @ 250μA | 11nC @ 4.5V | 530pF @ 15V | ||
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ON Semiconductor |
18,410
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 2.9A MICROFET6
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Cut Tape (CT) | PowerTrench | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 700mW | 2 P-Channel (Dual) | Logic Level Gate | 30V | 90 mOhm @ 2.9A，4.5V | 1V @ 250μA | 11nC @ 4.5V | 530pF @ 15V | ||
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ON Semiconductor |
18,410
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 2.9A MICROFET6
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- | PowerTrench | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 700mW | 2 P-Channel (Dual) | Logic Level Gate | 30V | 90 mOhm @ 2.9A，4.5V | 1V @ 250μA | 11nC @ 4.5V | 530pF @ 15V | ||
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ON Semiconductor |
5,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 60V 2.9A 8-SO
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Tape & Reel (TR) | PowerTrench | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 900mW | 2 P-Channel (Dual) | Logic Level Gate | 60V | 105 mOhm @ 2.9A，10V | 3V @ 250μA | 23nC @ 10V | 1020pF @ 30V | ||
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ON Semiconductor |
6,326
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 60V 2.9A 8-SO
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Cut Tape (CT) | PowerTrench | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 900mW | 2 P-Channel (Dual) | Logic Level Gate | 60V | 105 mOhm @ 2.9A，10V | 3V @ 250μA | 23nC @ 10V | 1020pF @ 30V | ||
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ON Semiconductor |
6,326
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 60V 2.9A 8-SO
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- | PowerTrench | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 900mW | 2 P-Channel (Dual) | Logic Level Gate | 60V | 105 mOhm @ 2.9A，10V | 3V @ 250μA | 23nC @ 10V | 1020pF @ 30V | ||
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Diodes Incorporated |
3,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 2.9A DFN
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-DFN (3x2) | 1.7W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 120 mOhm @ 2.5A，10V | 3V @ 250μA | 3.9nC @ 10V | 190pF @ 25V | ||
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Diodes Incorporated |
765
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 2.9A DFN
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-DFN (3x2) | 1.7W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 120 mOhm @ 2.5A，10V | 3V @ 250μA | 3.9nC @ 10V | 190pF @ 25V | ||
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Diodes Incorporated |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 2.9A DFN
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- | - | -55°C ~ 150°C (TJ) | 8-WDFN Exposed Pad | 8-DFN (3x2) | 1.7W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 120 mOhm @ 2.5A，10V | 3V @ 250μA | 3.9nC @ 10V | 190pF @ 25V | ||
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Diodes Incorporated |
3,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 2.9A 8MLP
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-MLP (3x2) | 1.7W | 2 N-Channel (Dual) | Logic Level Gate | 20V | 120 mOhm @ 4A，4.5V | 700mV @ 250μA (Min) | 3.1nC @ 4.5V | 299pF @ 15V | ||
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Diodes Incorporated |
3,401
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 2.9A 8MLP
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-MLP (3x2) | 1.7W | 2 N-Channel (Dual) | Logic Level Gate | 20V | 120 mOhm @ 4A，4.5V | 700mV @ 250μA (Min) | 3.1nC @ 4.5V | 299pF @ 15V | ||
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Diodes Incorporated |
3,401
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 2.9A 8MLP
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- | - | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-MLP (3x2) | 1.7W | 2 N-Channel (Dual) | Logic Level Gate | 20V | 120 mOhm @ 4A，4.5V | 700mV @ 250μA (Min) | 3.1nC @ 4.5V | 299pF @ 15V | ||
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Vishay Siliconix |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 2.9A 6-TSOP
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Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | SOT-23-6 Thin，TSOT-23-6 | 6-TSOP | 1.4W | 2 P-Channel (Dual) | Standard | 30V | 111 mOhm @ 2.5A，10V | 2.2V @ 250μA | 8nC @ 10V | 210pF @ 15V | ||
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Vishay Siliconix |
2,812
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 2.9A 6-TSOP
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Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | SOT-23-6 Thin，TSOT-23-6 | 6-TSOP | 1.4W | 2 P-Channel (Dual) | Standard | 30V | 111 mOhm @ 2.5A，10V | 2.2V @ 250μA | 8nC @ 10V | 210pF @ 15V | ||
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Vishay Siliconix |
2,812
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 2.9A 6-TSOP
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- | TrenchFET | -55°C ~ 150°C (TJ) | SOT-23-6 Thin，TSOT-23-6 | 6-TSOP | 1.4W | 2 P-Channel (Dual) | Standard | 30V | 111 mOhm @ 2.5A，10V | 2.2V @ 250μA | 8nC @ 10V | 210pF @ 15V | ||
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Diodes Incorporated |
3,500
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 60V 2.9A 8-SOIC
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOP | 1.81W | 2 P-Channel (Dual) | Logic Level Gate | 60V | 85 mOhm @ 2.9A，10V | 1V @ 250μA (Min) | 24.2nC @ 10V | 1021pF @ 30V | ||
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Diodes Incorporated |
131
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 60V 2.9A 8-SOIC
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.81W | 2 P-Channel (Dual) | Logic Level Gate | 60V | 85 mOhm @ 2.9A，10V | 1V @ 250μA (Min) | 24.2nC @ 10V | 1021pF @ 30V | ||
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Diodes Incorporated |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 60V 2.9A 8-SOIC
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- | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.81W | 2 P-Channel (Dual) | Logic Level Gate | 60V | 85 mOhm @ 2.9A，10V | 1V @ 250μA (Min) | 24.2nC @ 10V | 1021pF @ 30V | ||
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ON Semiconductor |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 2.9A 6-MICROFET
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Tape & Reel (TR) | PowerTrench | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 650mW | 2 N-Channel (Dual) | Logic Level Gate | 30V | 123 mOhm @ 2.9A，4.5V | 1.5V @ 250μA | 3nC @ 4.5V | 220pF @ 15V | ||
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ON Semiconductor |
2,961
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 2.9A 6-MICROFET
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Cut Tape (CT) | PowerTrench | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 650mW | 2 N-Channel (Dual) | Logic Level Gate | 30V | 123 mOhm @ 2.9A，4.5V | 1.5V @ 250μA | 3nC @ 4.5V | 220pF @ 15V |
