- Packaging：
-
- Series：
-
- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- FET Feature：
-
- Rds On (Max) @ Id，Vgs：
-
- Vgs(th) (Max) @ Id：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
- Selected conditions:
Discover 20 products
 |
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|
|
|
Infineon Technologies |
8,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 5.2A 8-SOIC
|
Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 20V | 50 mOhm @ 2.6A，4.5V | 700mV @ 250μA | 20nC @ 4.5V | 660pF @ 15V | ||
|
|
|
Infineon Technologies |
10,505
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 5.2A 8-SOIC
|
Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 20V | 50 mOhm @ 2.6A，4.5V | 700mV @ 250μA | 20nC @ 4.5V | 660pF @ 15V | ||
|
|
|
Infineon Technologies |
10,505
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 5.2A 8-SOIC
|
- | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 20V | 50 mOhm @ 2.6A，4.5V | 700mV @ 250μA | 20nC @ 4.5V | 660pF @ 15V | ||
|
|
|
Vishay Siliconix |
3,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 5.2A 8-TSSOP
|
Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | 8-TSSOP (0.173"，4.40mm Width) | 8-TSSOP | 1W | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 22 mOhm @ 6.5A，4.5V | 1.6V @ 250μA | 18nC @ 4.5V | - | ||
|
|
|
Vishay Siliconix |
8,743
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 5.2A 8-TSSOP
|
Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | 8-TSSOP (0.173"，4.40mm Width) | 8-TSSOP | 1W | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 22 mOhm @ 6.5A，4.5V | 1.6V @ 250μA | 18nC @ 4.5V | - | ||
|
|
|
Vishay Siliconix |
8,743
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 5.2A 8-TSSOP
|
- | TrenchFET | -55°C ~ 150°C (TJ) | 8-TSSOP (0.173"，4.40mm Width) | 8-TSSOP | 1W | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 22 mOhm @ 6.5A，4.5V | 1.6V @ 250μA | 18nC @ 4.5V | - | ||
|
|
|
Diodes Incorporated |
2,500
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 40V 5.2A 8SO
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.42W | 2 N-Channel (Dual) | Logic Level Gate | 40V | 31 mOhm @ 6A，10V | 3V @ 250μA | 18.6nC @ 10V | 945pF @ 20V | ||
|
|
|
Diodes Incorporated |
2,839
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 40V 5.2A 8SO
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.42W | 2 N-Channel (Dual) | Logic Level Gate | 40V | 31 mOhm @ 6A，10V | 3V @ 250μA | 18.6nC @ 10V | 945pF @ 20V | ||
|
|
|
Diodes Incorporated |
2,839
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 40V 5.2A 8SO
|
- | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.42W | 2 N-Channel (Dual) | Logic Level Gate | 40V | 31 mOhm @ 6A，10V | 3V @ 250μA | 18.6nC @ 10V | 945pF @ 20V | ||
|
|
|
Vishay Siliconix |
3,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 5.2A 8TSSOP
|
Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | 8-TSSOP (0.173"，4.40mm Width) | 8-TSSOP | 1W | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 22 mOhm @ 6.5A，4.5V | 1.6V @ 250μA | 18nC @ 4.5V | - | ||
|
|
|
Vishay Siliconix |
3,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 5.2A 8TSSOP
|
Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | 8-TSSOP (0.173"，4.40mm Width) | 8-TSSOP | 1W | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 22 mOhm @ 6.5A，4.5V | 1.6V @ 250μA | 18nC @ 4.5V | - | ||
|
|
|
Vishay Siliconix |
3,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 5.2A 8TSSOP
|
- | TrenchFET | -55°C ~ 150°C (TJ) | 8-TSSOP (0.173"，4.40mm Width) | 8-TSSOP | 1W | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 22 mOhm @ 6.5A，4.5V | 1.6V @ 250μA | 18nC @ 4.5V | - | ||
|
|
|
Diodes Incorporated |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 5.2A 8UDFN
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-PowerUDFN | U-DFN3030-8 | 770mW | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 18 mOhm @ 6A，4.5V | 1.1V @ 250μA | 16nC @ 4.5V | 1472pF @ 10V | ||
|
|
|
Diodes Incorporated |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 5.2A 8UDFN
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-PowerUDFN | U-DFN3030-8 | 770mW | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 18 mOhm @ 6A，4.5V | 1.1V @ 250μA | 16nC @ 4.5V | 1472pF @ 10V | ||
|
|
|
Diodes Incorporated |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 5.2A 8UDFN
|
- | - | -55°C ~ 150°C (TJ) | 8-PowerUDFN | U-DFN3030-8 | 770mW | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 18 mOhm @ 6A，4.5V | 1.1V @ 250μA | 16nC @ 4.5V | 1472pF @ 10V | ||
|
|
|
Diodes Incorporated |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 5.2A 8TSSOP
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-TSSOP (0.173"，4.40mm Width) | 8-TSSOP | 1W | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 23 mOhm @ 6.5A，4.5V | 950mV @ 250μA | 8.8nC @ 4.5V | 143pF @ 10V | ||
|
|
|
Diodes Incorporated |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 40V 5.2A 8SOIC
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 1.42W | 2 N-Channel (Dual) | Standard | 40V | 31 mOhm @ 6A，10V | 3V @ 250μA | 18.6nC @ 10V | 945pF @ 20V | ||
|
|
|
Infineon Technologies |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 5.2A 8-SOIC
|
Tube | HEXFET | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2W | 2 N-Channel (Dual) | Logic Level Gate | 20V | 50 mOhm @ 2.6A，4.5V | 700mV @ 250μA | 20nC @ 4.5V | 660pF @ 15V | ||
|
|
|
Infineon Technologies |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 5.2A 8SOIC
|
Cut Tape (CT) | HEXFET | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2.4W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 58 mOhm @ 5.2A，4.5V | 700mV @ 250μA | 29nC @ 4.5V | 913pF @ 15V | ||
|
|
|
Infineon Technologies |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 5.2A 8SOIC
|
- | HEXFET | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2.4W | 2 P-Channel (Dual) | Logic Level Gate | 20V | 58 mOhm @ 5.2A，4.5V | 700mV @ 250μA | 29nC @ 4.5V | 913pF @ 15V |
