FETs, MOSFETs - Arrays - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Package / Case：

Supplier Device Package：

Mounting Type：

Power - Max：

FET Type：

FET Feature：

Drain to Source Voltage (Vdss)：

Rds On (Max) @ Id，Vgs：

Vgs(th) (Max) @ Id：

Gate Charge (Qg) (Max) @ Vgs：

Input Capacitance (Ciss) (Max) @ Vds：

Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Package / Case	Supplier Device Package	Mounting Type	Power - Max	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Package / Case	Supplier Device Package	Mounting Type	Power - Max	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
	DMN6070SSD-13	Diodes Incorporated	17,500	3 days	-	MOSFET 2N-CH 60V 3.3A 8-SO MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 3.3A 8-SO	Tape & Reel (TR)	-	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	1.2W	2 N-Channel (Dual)	Logic Level Gate	60V	80 mOhm @ 12A，10V	3V @ 250μA	12.3nC @ 10V	588pF @ 30V
	DMN6070SSD-13	Diodes Incorporated	19,490	3 days	-	MOSFET 2N-CH 60V 3.3A 8-SO MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 3.3A 8-SO	Cut Tape (CT)	-	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	1.2W	2 N-Channel (Dual)	Logic Level Gate	60V	80 mOhm @ 12A，10V	3V @ 250μA	12.3nC @ 10V	588pF @ 30V
	DMN6070SSD-13	Diodes Incorporated	19,490	3 days	-	MOSFET 2N-CH 60V 3.3A 8-SO MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 3.3A 8-SO	-	-	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	1.2W	2 N-Channel (Dual)	Logic Level Gate	60V	80 mOhm @ 12A，10V	3V @ 250μA	12.3nC @ 10V	588pF @ 30V
	DMN6066SSD-13	Diodes Incorporated	15,000	3 days	-	MOSFET 2N-CH 60V 3.3A 8SO MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 3.3A 8SO	Tape & Reel (TR)	-	8-SOIC (0.154"，3.90mm Width)	8-SOP	Surface Mount	1.8W	2 N-Channel (Dual)	Logic Level Gate	60V	66 mOhm @ 4.5A，10V	3V @ 250μA	10.3nC @ 10V	502pF @ 30V
	DMN6066SSD-13	Diodes Incorporated	16,970	3 days	-	MOSFET 2N-CH 60V 3.3A 8SO MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 3.3A 8SO	Cut Tape (CT)	-	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	1.8W	2 N-Channel (Dual)	Logic Level Gate	60V	66 mOhm @ 4.5A，10V	3V @ 250μA	10.3nC @ 10V	502pF @ 30V
	DMN6066SSD-13	Diodes Incorporated	16,970	3 days	-	MOSFET 2N-CH 60V 3.3A 8SO MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 3.3A 8SO	-	-	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	1.8W	2 N-Channel (Dual)	Logic Level Gate	60V	66 mOhm @ 4.5A，10V	3V @ 250μA	10.3nC @ 10V	502pF @ 30V
	FDMA3027PZ	ON Semiconductor	3,000	3 days	-	MOSFET 2P-CH 30V 3.3A MICRO MOQ: 1 MPQ: 1	MOSFET 2P-CH 30V 3.3A MICRO	Tape & Reel (TR)	PowerTrench	6-VDFN Exposed Pad	6-MicroFET (2x2)	Surface Mount	700mW	2 P-Channel (Dual)	Logic Level Gate	30V	87 mOhm @ 3.3A，10V	3V @ 250μA	10nC @ 10V	435pF @ 15V
	FDMA3027PZ	ON Semiconductor	3,350	3 days	-	MOSFET 2P-CH 30V 3.3A MICRO MOQ: 1 MPQ: 1	MOSFET 2P-CH 30V 3.3A MICRO	Cut Tape (CT)	PowerTrench	6-VDFN Exposed Pad	6-MicroFET (2x2)	Surface Mount	700mW	2 P-Channel (Dual)	Logic Level Gate	30V	87 mOhm @ 3.3A，10V	3V @ 250μA	10nC @ 10V	435pF @ 15V
	FDMA3027PZ	ON Semiconductor	3,350	3 days	-	MOSFET 2P-CH 30V 3.3A MICRO MOQ: 1 MPQ: 1	MOSFET 2P-CH 30V 3.3A MICRO	-	PowerTrench	6-VDFN Exposed Pad	6-MicroFET (2x2)	Surface Mount	700mW	2 P-Channel (Dual)	Logic Level Gate	30V	87 mOhm @ 3.3A，10V	3V @ 250μA	10nC @ 10V	435pF @ 15V
	DMN2050LFDB-7	Diodes Incorporated	3,000	3 days	-	MOSFET 2N-CH 20V 3.3A 6UDFN MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 3.3A 6UDFN	Tape & Reel (TR)	-	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)	Surface Mount	730mW	2 N-Channel (Dual)	Logic Level Gate	20V	45 mOhm @ 5A，4.5V	1V @ 250μA	12nC @ 10V	389pF @ 10V
	DMN2050LFDB-7	Diodes Incorporated	3,232	3 days	-	MOSFET 2N-CH 20V 3.3A 6UDFN MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 3.3A 6UDFN	Cut Tape (CT)	-	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)	Surface Mount	730mW	2 N-Channel (Dual)	Logic Level Gate	20V	45 mOhm @ 5A，4.5V	1V @ 250μA	12nC @ 10V	389pF @ 10V
	DMN2050LFDB-7	Diodes Incorporated	3,232	3 days	-	MOSFET 2N-CH 20V 3.3A 6UDFN MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 3.3A 6UDFN	-	-	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)	Surface Mount	730mW	2 N-Channel (Dual)	Logic Level Gate	20V	45 mOhm @ 5A，4.5V	1V @ 250μA	12nC @ 10V	389pF @ 10V
	DMN2050LFDB-13	Diodes Incorporated	Inquiry	-	-	MOSFET 2N-CH 20V 3.3A 6UDFN MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 3.3A 6UDFN	Tape & Reel (TR)	-	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)	Surface Mount	730mW	2 N-Channel (Dual)	Logic Level Gate	20V	45 mOhm @ 5A，4.5V	1V @ 250μA	12nC @ 10V	389pF @ 10V
	DMN2050LFDB-13	Diodes Incorporated	7,885	3 days	-	MOSFET 2N-CH 20V 3.3A 6UDFN MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 3.3A 6UDFN	Cut Tape (CT)	-	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)	Surface Mount	730mW	2 N-Channel (Dual)	Logic Level Gate	20V	45 mOhm @ 5A，4.5V	1V @ 250μA	12nC @ 10V	389pF @ 10V
	DMN2050LFDB-13	Diodes Incorporated	7,885	3 days	-	MOSFET 2N-CH 20V 3.3A 6UDFN MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 3.3A 6UDFN	-	-	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)	Surface Mount	730mW	2 N-Channel (Dual)	Logic Level Gate	20V	45 mOhm @ 5A，4.5V	1V @ 250μA	12nC @ 10V	389pF @ 10V
	AO4886	Alpha & Omega Semiconductor Inc.	Inquiry	-	-	MOSFET 2N-CH 100V 3.3A 8SOIC MOQ: 1 MPQ: 1	MOSFET 2N-CH 100V 3.3A 8SOIC	Tape & Reel (TR)	-	8-SOIC (0.154"，3.90mm Width)	8-SOIC	Surface Mount	2W	2 N-Channel (Dual)	Logic Level Gate	100V	80 mOhm @ 3A，10V	2.7V @ 250μA	20nC @ 10V	942pF @ 50V
	AO4886	Alpha & Omega Semiconductor Inc.	2,888	3 days	-	MOSFET 2N-CH 100V 3.3A 8SOIC MOQ: 1 MPQ: 1	MOSFET 2N-CH 100V 3.3A 8SOIC	Cut Tape (CT)	-	8-SOIC (0.154"，3.90mm Width)	8-SOIC	Surface Mount	2W	2 N-Channel (Dual)	Logic Level Gate	100V	80 mOhm @ 3A，10V	2.7V @ 250μA	20nC @ 10V	942pF @ 50V
	AO4886	Alpha & Omega Semiconductor Inc.	2,888	3 days	-	MOSFET 2N-CH 100V 3.3A 8SOIC MOQ: 1 MPQ: 1	MOSFET 2N-CH 100V 3.3A 8SOIC	-	-	8-SOIC (0.154"，3.90mm Width)	8-SOIC	Surface Mount	2W	2 N-Channel (Dual)	Logic Level Gate	100V	80 mOhm @ 3A，10V	2.7V @ 250μA	20nC @ 10V	942pF @ 50V
	FDSS2407	ON Semiconductor	Inquiry	-	-	MOSFET 2N-CH 62V 3.3A 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2N-CH 62V 3.3A 8-SOIC	Tape & Reel (TR)	Automotive，AEC-Q101，PowerTrench	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	2.27W	2 N-Channel (Dual)	Logic Level Gate	62V	110 mOhm @ 3.3A，10V	3V @ 250μA	4.3nC @ 5V	300pF @ 15V
	FDSS2407	ON Semiconductor	1,642	3 days	-	MOSFET 2N-CH 62V 3.3A 8-SOIC MOQ: 1 MPQ: 1	MOSFET 2N-CH 62V 3.3A 8-SOIC	Cut Tape (CT)	Automotive，AEC-Q101，PowerTrench	8-SOIC (0.154"，3.90mm Width)	8-SO	Surface Mount	2.27W	2 N-Channel (Dual)	Logic Level Gate	62V	110 mOhm @ 3.3A，10V	3V @ 250μA	4.3nC @ 5V	300pF @ 15V

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