Series:
Supplier Device Package:
Power - Max:
Drain to Source Voltage (Vdss):
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 7 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Package / Case Supplier Device Package Power - Max FET Feature Drain to Source Voltage (Vdss) Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
DMN1029UFDB-7
Diodes Incorporated
6,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 12V 5.6A 6UDFN
Tape & Reel (TR) - 6-UDFN Exposed Pad U-DFN2020-6 (Type B) 1.4W Standard 12V 29 mOhm @ 5A,4.5V 1V @ 250μA 19.6nC @ 8V 914pF @ 6V
DMN1029UFDB-7
Diodes Incorporated
7,078
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 12V 5.6A 6UDFN
Cut Tape (CT) - 6-UDFN Exposed Pad U-DFN2020-6 (Type B) 1.4W Standard 12V 29 mOhm @ 5A,4.5V 1V @ 250μA 19.6nC @ 8V 914pF @ 6V
DMN1029UFDB-7
Diodes Incorporated
7,078
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 12V 5.6A 6UDFN
- - 6-UDFN Exposed Pad U-DFN2020-6 (Type B) 1.4W Standard 12V 29 mOhm @ 5A,4.5V 1V @ 250μA 19.6nC @ 8V 914pF @ 6V
DMN1029UFDB-13
Diodes Incorporated
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 12V 5.6A 6UDFN
Tape & Reel (TR) - 6-UDFN Exposed Pad U-DFN2020-6 (Type B) 1.4W Standard 12V 29 mOhm @ 5A,4.5V 1V @ 250μA 19.6nC @ 8V 914pF @ 6V
PMWD19UN,518
NXP USA Inc.
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.6A 8TSSOP
Tape & Reel (TR) TrenchMOS 8-TSSOP (0.173",4.40mm Width) 8-TSSOP 2.3W Logic Level Gate 30V 23 mOhm @ 3.5A,4.5V 700mV @ 1mA 28nC @ 5V 1478pF @ 10V
PMWD19UN,518
NXP USA Inc.
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.6A 8TSSOP
Cut Tape (CT) TrenchMOS 8-TSSOP (0.173",4.40mm Width) 8-TSSOP 2.3W Logic Level Gate 30V 23 mOhm @ 3.5A,4.5V 700mV @ 1mA 28nC @ 5V 1478pF @ 10V
PMWD19UN,518
NXP USA Inc.
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 5.6A 8TSSOP
- TrenchMOS 8-TSSOP (0.173",4.40mm Width) 8-TSSOP 2.3W Logic Level Gate 30V 23 mOhm @ 3.5A,4.5V 700mV @ 1mA 28nC @ 5V 1478pF @ 10V