Operating Temperature:
Supplier Device Package:
Power - Max:
Drain to Source Voltage (Vdss):
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 9 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Operating Temperature Package / Case Supplier Device Package Power - Max FET Type Drain to Source Voltage (Vdss) Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
ZXMHN6A07T8TA
Diodes Incorporated
1,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 4N-CH 60V 1.4A SM8
Tape & Reel (TR) -55°C ~ 150°C (TJ) SOT-223-8 SM8 1.6W 4 N-Channel (H-Bridge) 60V 300 mOhm @ 1.8A,10V 3V @ 250μA 3.2nC @ 10V 166pF @ 40V
ZXMHN6A07T8TA
Diodes Incorporated
1,303
3 days
-
MOQ: 1  MPQ: 1
MOSFET 4N-CH 60V 1.4A SM8
Cut Tape (CT) -55°C ~ 150°C (TJ) SOT-223-8 SM8 1.6W 4 N-Channel (H-Bridge) 60V 300 mOhm @ 1.8A,10V 3V @ 250μA 3.2nC @ 10V 166pF @ 40V
ZXMHN6A07T8TA
Diodes Incorporated
1,303
3 days
-
MOQ: 1  MPQ: 1
MOSFET 4N-CH 60V 1.4A SM8
- -55°C ~ 150°C (TJ) SOT-223-8 SM8 1.6W 4 N-Channel (H-Bridge) 60V 300 mOhm @ 1.8A,10V 3V @ 250μA 3.2nC @ 10V 166pF @ 40V
ZXMHN6A07T8TA
Diodes Incorporated
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 4N-CH 60V 1.4A SM8
Tape & Reel (TR) -55°C ~ 150°C (TJ) SOT-223-8 SM8 1.6W 4 N-Channel (H-Bridge) 60V 300 mOhm @ 1.8A,10V 3V @ 250μA 3.2nC @ 10V 166pF @ 40V
ZXMHN6A07T8TA
Diodes Incorporated
250
3 days
-
MOQ: 1  MPQ: 1
MOSFET 4N-CH 60V 1.4A SM8
Cut Tape (CT) -55°C ~ 150°C (TJ) SOT-223-8 SM8 1.6W 4 N-Channel (H-Bridge) 60V 300 mOhm @ 1.8A,10V 3V @ 250μA 3.2nC @ 10V 166pF @ 40V
ZXMHN6A07T8TA
Diodes Incorporated
250
3 days
-
MOQ: 1  MPQ: 1
MOSFET 4N-CH 60V 1.4A SM8
- -55°C ~ 150°C (TJ) SOT-223-8 SM8 1.6W 4 N-Channel (H-Bridge) 60V 300 mOhm @ 1.8A,10V 3V @ 250μA 3.2nC @ 10V 166pF @ 40V
US6K2TR
ROHM Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 1.4A TUMT6
Tape & Reel (TR) 150°C (TJ) 6-SMD,Flat Leads TUMT6 1W 2 N-Channel (Dual) 30V 240 mOhm @ 1.4A,10V 2.5V @ 1mA 2nC @ 5V 70pF @ 10V
US6K2TR
ROHM Semiconductor
480
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 1.4A TUMT6
Cut Tape (CT) 150°C (TJ) 6-SMD,Flat Leads TUMT6 1W 2 N-Channel (Dual) 30V 240 mOhm @ 1.4A,10V 2.5V @ 1mA 2nC @ 5V 70pF @ 10V
US6K2TR
ROHM Semiconductor
480
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 1.4A TUMT6
- 150°C (TJ) 6-SMD,Flat Leads TUMT6 1W 2 N-Channel (Dual) 30V 240 mOhm @ 1.4A,10V 2.5V @ 1mA 2nC @ 5V 70pF @ 10V